Herzlich Willkommen to the 14th International Conference on Group … · 2017-11-27 · Herzlich...

Herzlich Willkommen to the 14th International Conference on Group IV Photonics

On behalf of the organization committee, it is our pleasure to welcome you to the 14th Conference

on Group IV Photonics (GFP 2017) that will take place from the 23rd to the 25th of August 2017 at

the Grand Hyatt Berlin, Germany. It will be preceded by a workshop on Silicon Photonics

Computer Aided Design (CAD) flows on the afternoon of the 22nd organized by leading simulation

and design tool providers. An industry session on Wednesday afternoon is specially aimed at

recent/future graduates as well as experienced researchers who want to be informed/stay abreast

of opportunities and recent trends in industrial use of the technology. Best Paper, Best Student

Paper and Best Poster Awards have been generously endowed by our sponsors. A sponsored

Welcome Reception and a sponsored Gala Dinner on Thursday night will give participants the

opportunity to connect in an informal setting.

Since the inception of the conference in 2004, we have witnessed evolving foci as the Group IV

Photonics field has matured and diversified into different materials, wavelengths and applications.

This year, we have added a fourth topic, “Sensing and Instrumentation”, to the preexisting “Novel

Materials, Nanophotonics and Processes”, “Photonic Devices” and “Application and Systems”, in

order to emphasize the diversification of applications from a very communications centric focus.

Beyond Sensing and Communications, Silicon Photonics for Quantum Technologies is also

represented in this year’s conference. Notably this year, amongst the talks selected by the technical

program committees, a good number of papers treat the extension of Group IV Photonics to visible

wavelengths with help of Silicon Nitride waveguides, coherent light generation with (Si)GeSn

materials, novel passive devices with subwavelength structures, as well as the direct growth of III-

V compound semiconductors onto Silicon substrates.

GFP remains a focused, single track conference giving researchers the opportunity to get a

comprehensive update of the latest developments in the field in a structured manner without having

to “cut corners”. We hope it will give you the opportunity to get new insights, reconnect with

previous colleagues and make bonds with new research partners in a friendly and stimulating

environment.

Bis bald in Berlin!

Jeremy Witzens

Conference General Chair

RWTH Aachen University

Lars Zimmermann

Conference Program Chair IHP

Germany Germany

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Group IV Photonics Conference Committee List 2017

General Chair Jeremy Witzens, RWTH Aachen University, Germany

Program Chair Lars Zimmermann, IHP, Germany

Novel Materials, Nanophotonics and Processes

Topic Co-Chairs Goran Mashanovich, University of Southampton, UK Jurgen Michel, Massachusetts Institute of Technology, USA

Committee Members Dan Buca, Forschungszentrum Jülich, Germany Tsuyoshi Horikawa, National Institute of Advanced Industrial Science and Technology, Japan

Andrew Knights, McMaster University, Canada

Chuanbo Li, Institute of Semiconductors, CAS, China

Andrea Melloni, Politecnico di Milano, Italy

Haisheng Rong, Intel, USA

Mitsuru Takenaka, University of Tokyo, Japan

Alexei Tchelnokov, CEA-LETI, France

Li Yang, Futurewei, USA

Photonic Devices

Topic Co-Chairs Joyce Poon, University of Toronto, Canada Laurent Vivien, CNRS & Univ Paris Sud, France ersity

Committee Members Charles Baudot, ST Microelectronics, France Pavel Cheben, National Research Council, Canada

Il-Sug Chung, Technical University of Denmark, Denmark

Jean Marc Fedeli, CEA-LETI, France

Shayan Mookherjea, University of California at San Diego, USA

Hon Ki Tsang, The Chinese University of Hong Kong, China

Dries Van Thourhout, Ghent University, Belgium

Ming Wu, University of California at Berkeley, USA

Winnie Ye, Carleton University, Canada

Linjie Zhou, Shanghai Jiao Tong University, China

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Sensing and Instrumentation

Topic Co-Chairs

Andrew Poon, The Hong Kong University of Science and Technology, China Christian Koos, Karlsruhe Institute of Technology, Germany

Committee Members Ali Adibi, Georgia Tech, USA Eric Cassan, Université Paris Sud, France

Daoxin Dai, Zhejiang University, China

Patrick Guo-Qiang Lo, IME, Singapore

Siegfried Janz, National Research Council, Canada

Laura Lechuga, Spanish National Research Council, Spain

Junfeng Song, Jilin University, China

Pol van Dorpe, KU-Leuven & IMEC, Belgium

Silicon Photonics Applications and Systems

Topic Co-Chairs Po Dong, Nokia – Bell Labs, USA Koji Yamada, National Institute of Advanced Industrial Science and Technology, Japan

Committee Members Wim Bogaerts, Ghent University, Belgium Long Chen, Acacia, USA

Lukas Chrostowski, The University of British Columbia, Canada

Hiroshi Fukuda, NTT, Japan

Yu Yu, Huazhong University of Science and Technology, China

Jason Liow, IME, Singapore

Peter O'Brien, Tyndall Institute, Ireland

Richard Piton, Seagate, UK

Vladimir M. Stojanovic, University of California-Berkeley, USA

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Table of Contents

Program-at-a-Glance..........................................................Inside Front Cover

Welcome Letter ..............................................................................................1

Committee List ..............................................................................................2

Exhibitor Guide..............................................................................................5

Sponsors ........................................................................................................8

Program........................................................................................................11

Photography Clause ....................................................................................38

Author Index ................................................................................................39

Hotel Map ..........................................................................Inside Back Cover

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GROUP IV PHOTONICS CONFERENCE 2017

EXHIBITOR GUIDE

ePIXfab-The European Silicon Photonics Alliance

CONTACT: ABDUL RAHIM

ePIXfab-The European Silicon Photonics Alliance

iGent Tower, Technologiepark-Zwijnaarde 15

Ghent, Belgium 9052

Phone: + 0032 471 581 274

Email: [email protected]

Website: www.epixfab.eu

ePIXfab is a European alliance of organizations that

promotes silicon photonics science, technology, and

application through a fabless model for the development

of silicon photonic circuits based on existing photonics

and CMOS infrastructure.

Information Gatekeepers, Inc.

CONTACT: HUI PAN

Information Gatekeepers, Inc.

1340 Soldiers Field Road, Ste. 5

Boston, MA 02135 USA

Phone: + 617 782 5033


Website: www.igigroup.com

Information Gatekeepers, Inc. is a publisher, trade show

organizer, consultancy and information service provider in

the fields of fiber optics, high-speed Internet, wireless, and

emerging telecom markets. For more information, visit

www.igigroup.com.

LioniX International

CONTACT: DOUWE GEUZEBROEK

LioniX International

Hengelosestraat Wicherink

Enschede

The Netherlands

7521AN

Phone: + 31 53 20 30 053


Website: www.lionix-int.com

LioniX International is a leading global provider of

customized microsystem solutions, in particular integrated

photonics-based, in scalable production volumes.

We provide customized solutions for OEM’s and System

Integrators, from design to fully assembled modules, by

vertical integration in scalable production volumes. We

maintain our technology leadership secured by a strong IP

position.

LioniX International focuses on Photonic Integrated

Circuits (PIC) enabled modules based on its proprietary

waveguide technology (TriPleX™), in addition to its other

core competences micro-fluidics, opto-fluidics and

MEMS. As a vertical integrated company, we deliver a

complete solution to our OEM customers: from initial

design through volume manufacturing of products.

Our PIC modules and additional competences can be used

in a suite of applications in Telecom/Datacom, Life

Science, Metrology and is offered as well in our

technology services.

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mailto:[email protected]

http://www.igigroup.com/

http://www.igigroup.com/


EXHIBITOR GUIDE

Nanosystec GmbH

CONTACT: GUENTER HUMMELT

Nanosystec GmbH

Marie-Curie-Strasse 6

Gross Umstadt Germany

64823

Phone: + 49 6078 78254 0


Website: www.nanosystec.com

Nanosystec offers several instruments which are very

useful for the work with silicon wafers and chips.

Nanotest is ideal for optical and electrical testing of chips

and for wafers up to 12“ diameter at temperatures up to

100° C. Nanoglue with Optospin is capable of active

alignment of optical elements and fibers within a few

seconds. Dispensing of the resin and UV curing is fully

automated. If the loss budget allows passive placement of

optical fibers with our system Nanoplace is a viable

option. One or several fibers are placed in front of the

channels of the PIC and fixed with glue and

subsequent UV curing.

PhoeniX Software

CONTACT: NIEK NIJENHUIS

PhoeniX Software

Hengelose Straat 705

Enschede Overijssel

The Netherlands 7521 PA

Phone: + 31 (0) 53 483 6460


Website: www.phoenixbv.com

Pioneering photonics design automation since 1991, today

Phoenix has a global presence and is a trusted, well

recognized partner for numerous organizations. We enable

easy and cost-effective realization of integrated photonics

chips and systems, by using our internally developed

superior products and services.

Photon Design Ltd.

CONTACT: DOMINIC GALLAGHER

Photon Design Ltd.

34 Leopold Street

Oxford

United Kingdom OX4 1TW

Phone: + 44 1865 324990


Website: www.photond.com

Photon Design was started in 1992 and supplies a wide

range of innovative photonics CAD tools to most of the

World's leading photonic companies, universities and

government research labs, with customers in 35 countries

around the world. Our CAD products include tools for

both passive and active (semiconductor) optical

components and optical circuit modeling.

Physik Instrumente (PI) GmbH & Co. KG

CONTACT: SCOTT JORDAN

Physik Instrumente (PI) GmbH & Co. KG

Auf der Roemerstrassel

Karlsruhe Germany 76228

Phone: + 49 721 4846 1813


Website: www.pi.ws

Well-known for the high quality of its products, PI

(Physik Instrumente) is one of the leading players in the

global market for precision positioning technology for

many years. PI has been developing and manufacturing

standard and OEM products with piezo or motor drives for

40 years.

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EXHIBITOR GUIDE PIXAPP, MIRPHAB, PIX4life

CONTACT: ANA GONZALEZ

PIXAPP, MIRPHAB, PIX4 life

17 Rue Hamelin

Paris France

75016

Phone: + 34 669 68 71 96


Website: www.pixapp.eu, www.mirphab.eu,

www.pix4life.eu

PIXAPP is the world’s first open-access PIC Assembly

and Packaging Pilot Line and helps users exploit the

breakthrough advantages of PIC technologies. PIXAPP

consists of a highly-interdisciplinary team of Europe’s

leading industrial & research organisations, and provides

users with single-point access to PIC assembly and

packaging.

PIX4life is a Silicon Nitride Photonic Integrated Circuit

Pilot line for Life Science Applications in the Visible

Range. It enables the production of low-cost, highly

reproducible, and scalable products, aiming to lower

barriers to entry for testing and validating biophotonics

concepts.

MIRPHAB (Mid InfraRed PHotonics devices fABrication

for chemical sensing and spectroscopic applications)

provides a platform to fabricate MID-IR sensors and to

quickly introduce them into the market.

VPIphotonics GmbH

CONTACT: VERA HILT

VPIphotonics GmbH

Carnotstraße 6

Berlin Deutschland 10587

Phone: + 0 30 398 258


Website: www.VPIphotonics.com

VPIphotonics™ sets the industry standard for end-to-end

photonic design automation comprising design, analysis

and optimization of components, systems and networks.

We provide professional simulation software supporting

requirements of active/passive integrated photonics and

fiber optics applications, optical transmission system and

network applications, as well as cost-optimized equipment

configuration.

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http://www.pixapp.eu/

http://www.mirphab.eu/

Group IV Photonics Conference 2017 Sponsors:

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Final ProgramWEDNESDay, 23 aUGUST 2017

8:00 am–9:00 am Grand Ballroom aSession Wa Welcome / Plenary ISession Chair Lars Zimmermann, Leibniz Institute for Innovation in High-Performance

Microelectronics (IHP)

8:00 am–8:15 am Grand Ballroom aWelcome Remarks

8:15 am–9:00 am (Plenary)Wa1 Enabling Chip-Scale Trace-Gas Sensing Systems with Silicon Photonics, W. Green,

IBM T. J. Watson Research Center

Tunable laser trace-gas spectroscopy has been effectively used in both environmental and medicalapplications, for its sensitivity and specificity. We’ll describe how contemporary silicon photonicsmanufacturing and assembly are leveraged for a cost-effective miniaturized spectroscopic sensorplatform, and outline uses in fugitive methane emissions monitoring.

9:00 am–10:00 am Grand Ballroom aSession WB Mid-Infrared Integrated PhotonicsSession Chair Goran Mashanovich, University of Southampton

9:00 am–9:15 amWB1 Mid-Infrared n-Ge on Si Plasmonic Based Microbolometer Sensors, K. Gallacher,

R. W. Millar, University of Glasgow, Glasgow, United Kingdom, V. Giliberti, E. Calandrini, L. Baldassarre, Sapienza Universitá di Roma, Rome, Italy, J. Frigerio, A. Ballabio, Politecnico di Milano, Como, Italy, E. Sakat, G. Pellegrini, Politecnico diMilano, Milano, Italy, G. Isella, Politecnico di Milano, Como, Italy, M. Ortolani, SapienzaUniversitá di Roma, Rome, Italy, P. Biagioni, Politecnico di Milano, Milano, Italy and D. J. Paul, University of Glasgow, Glasgow, United Kingdom

The detection and amplification of molecular absorption lines from a chemical weapons simulantis demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75 microbolometer detector with n-Ge plasmonic antenna is demonstrated as anintegrated mid- infrared plasmonic sensor.

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9:15 am–9:30 amWB2 Broadband Mid Infrared Photonic Integrated Components Using a Ge-Rich SiGe

Platform, V. Vakarin, J. M. Ramirez, Q. Liu, X. Le Roux, Université Paris-Sud, Orsay,France, J. Frigerio, A. Ballabio, Politecnico di Milano, Como, Italy, L. Vivien, UniversitéParis-Sud, Orsay, France, G. Isella, Politecnico di Milano, Como, Italy, and D. Marris-Morini, Université Paris-Sud, Orsay, France

We demonstrate low-loss mid infrared photonic integrated components fabricated on a Ge-rich Si1-xGex platform. These devices show broadband operation over a wavelength range of at least fromλ ≈ 5.1 µm to λ ≈ 8.6 µm, and comprise waveguides, multimode interference couplers and Mach-Zehnder interferometers.

9:30 am–9:45 amWB3 Mid-Infrared Ge-on-Si Electro-absorption Modulator, T. Li, University of

Southampton, Southampton, United Kingdom and Peking University, Beijing, China, M. Nedeljkovic, N. Hattasan, A. Z. Khokhar, S. A. Reynolds, S. Stanković, M. Banakar, W. Cao, Z. Qu, C. G. Littlejohns, J. Soler Penades, K. Grabska, L. Mastronardi, D. J. Thomson, F. Y. Gardes, G. T. Reed, University of Southampton, Southampton, United Kingdom, H. Wu, Z. Zhou, Peking University, Beijing, China, and G. Z. Mashanovich, University of Southampton, Southampton, United Kingdom

We present the first waveguide electro-absorption modulator in germanium-on-silicon materialplatform at 3.8 μm wavelength, based on free-carrier injection into a straight waveguide. Thefabricated 1 mm long device has modulation depth of >35 dB at 7 V.

9:45 am–10:00 amWB4 Heavily-Doped Germanium on Silicon with activated Doping Exceeding 1020 cm–3

as an alternative to Gold for Mid-Infrared Plasmonics, J. Frigerio, A. Ballabio, Politecnico di Milano, Como, Italy, G. Pellegrini, Politecnico di Milano, Milan, Italy, K. Gallacher, University of Glasgow, Glasgow, United Kingdom, V. Gilberti, L. Baldassarre, Sapienza Università di Roma, Rome, Italy, R. Milazzo, Università di Padova, Padova, Italy, K. Huet, F. Mazzamuto, Laser System and Solutions of Europe,Grennevilliers, France, P. Biagioni, Politecnico di Milano, Milan, Italy, D. J. Paul,University of Glasgow, Glasgow, United Kingdom, M. Ortolani, Sapienza Università diRoma, Rome, Italy, E. Napolitani, Università di Padova and CNR-IMM Matis, Padova,Italy, and G. Isella, Politecnico di Milano, Como, Italy

Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laserthermal annealing to demonstrate activated doping levels >1020 cm–3 which allows most of the 3 to20 µm mid-infrared sensing window to be covered with enhancements comparable to goldplasmonics.

10:00 am–10:30 am Grand Ballroom BExhibits / Coffee Break

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10:30 am–12:00 pm Grand Ballroom aSession WC Group IV Light Sources / GeSn DevicesSession Chair Dan Buca, Forschungszentrum Jülich

10:30 am–11:00 am (Invited)WC1 Zener Tunnel-Injection for Ge Optical amplifiers, Lasers and Modulators,

R. Koerner, I. A. Fischer, M. Oehme, C. Clausen, and J. Schulze, University of Stuttgart,Stuttgart, Germany

We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductoroptical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation withextinction ratios >14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.

11:00 am–11:15 amWC2 Lasing of Optically Pumped GeSn Micro-Structures Grown on Step-Graded GeSn

Buffers, V. Reboud, Univ. Grenoble Alpes, CEA LETI, Grenoble, France, A. Gassenq, N. Pauc, Univ. Grenoble Alpes, CEA INAC, Grenoble, France, J. Aubin, Univ. GrenobleAlpes, CEA LETI, Grenoble, France, Q. M. Thai, Univ. Grenoble Alpes, CEA INAC,Grenoble, France, M. Bertrand, L. Milord, E. Martinez, C. Licitra, D. Rouchon, J. Rothman, Univ. Grenoble Alpes, CEA LETI, Grenoble, France, F. Armand Pilon, T. Zabel, H. Sigg, Paul Scherrer Institut, Villigen, Switzerland, A. Chelnokov, J. M.Hartmann, Univ. Grenoble Alpes, CEA LETI, Grenoble, France, and V. Calvo, PaulScherrer Institut, Villigen, Switzerland,

We report optically pumped lasing from GeSn micro-disks with high Sn content active GeSn layers.Buffer layers made by a step-growth show enhanced performances compared to conventional Gestrain relaxed buffers.

11:15 am–11:30 amWC3 Reduced Threshold Microdisk Lasers from GeSn/SiGeSn Heterostructures,

D. Stange, N. von den Driesch, Forschungszentrum Juelich GmbH, Juelich, Germany, T. Zabel, F. Armand-Pilon, Paul Scherrer Institut, Villigen, Switzerland, B. Marzban,RWTH Aachen IPH, Aachen, Germany, D. Rainko, Forschungszentrum Juelich GmbH,Juelich, Germany, J.-M. Hartmann, Univ. Grenoble Alpes, Grenoble, France, G. Capellini, T. Schroeder, IHP, Frankfurt (Oder), Germany, H. Sigg, Paul ScherrerInstitut, Villigen, Switzerland, J. Witzens, RWTH Aachen IPH, Aachen, Germany, D. Grützmacher, and D. Buca, Forschungszentrum Juelich GmbH, Juelich, Germany

We present optically pumped lasing from group IV GeSn/SiGeSn heterostructures. A comparisonbetween double heterostructure and multi-quantum-well microdisk cavities reveals advantages ofthe multi-well design. Strongly reduced lasing thresholds compared to values from bulk devices areobserved.

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11:30 am–11:45 amWC4 Cavity Mode analysis of Highly Strained Direct Bandgap Germanium Micro-Bridge

Cavities, F. Armand-Pilon, T. Zabel, E. Marin, Paul Scherrer Institute, Villigen,Switzerland, C. Bonzon, ETH Zürich, Zürich, Switzerland, S. Tardif, A. Gassenq, N. Pauc,University Grenoble Alpes and CEA-INAC, Grenoble, France, V. Reboud, UniversityGrenoble Alpes and CEA-LETI, Grenoble, France, V. Calvo, University Grenoble Alpesand CEA-INAC, Grenoble, France, J. M. Hartmann, J. Widiez, A. Chelnokov, UniversityGrenoble Alpes and CEA-LETI, Grenoble, France, J. Faist, ETH Zürich, Zürich,Switzerland, and H. Sigg, Paul Scherrer Institute, Villigen, Switzerland

Enhanced photoluminescence at a wavelength as high as 5 μm is obtained in uniaxial tensile strainedGeOI micro-bridges cavities. We present, using excitation power dependent photoluminescencespectroscopy, a clear cavity mode pattern which indicates a loss reduction with increasing freecarrier density.

11:45 am–12:00 pmWC5 Design of a High-Speed Germanium-Tin absorption Modulator at Mid-Infrared

Wavelengths, R. Ponce, RWTH Aachen University, Aachen, Germany andForschungszentrum Juelich GmbH, Juelich, Germany and Jülich Aachen ResearchAlliance, Fundamentals of Future Information Technology (JARA-FIT), S. Sharif Azadeh,RWTH Aachen University, Aachen, Germany and Jülich Aachen Research Alliance,Fundamentals of Future Information Technology (JARA-FIT), D. Stange,Forschungszentrum Juelich GmbH, Juelich, Germany and Jülich Aachen ResearchAlliance, Fundamentals of Future Information Technology (JARA-FIT), F. Merget, B. Marzban, RWTH Aachen University, Aachen, Germany and Jülich Aachen ResearchAlliance, Fundamentals of Future Information Technology (JARA-FIT), Z. Ikonic,University of Leeds, Leeds, England, D. Buca, Forschungszentrum Juelich GmbH, Juelich,Germany and Jülich Aachen Research Alliance, Fundamentals of Future InformationTechnology (JARA-FIT), and J. Witzens, RWTH Aachen University, Aachen, Germany andJülich Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT)

We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloyoperating at mid-infrared wavelengths. Enhancement of Franz-Keldysh-effect by field confinementto GeSn in a reverse-biased junction results in 3.2 dB insertion losses, 35 GHz bandwidth and 6 dBextinction ratio for 2 Vpp applied voltage.

12:00 pm–1:30 pmLunch Break

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1:30 pm–2:45 pm Grand Ballroom aSession WD Optical Transmitter and Filter TechnologySession Chair Zhiping Zhou, Peking University

1:30 pm–1:45 pmWD1 High-Efficiency Silicon Mach-Zehnder Modulator with Vertical PN Junction Based

on Fabrication-Friendly Strip-Loaded Waveguide, Y. Maegami, G. Cong, M. Ohno, M. Okano, National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Japan, K. Itoh, N. Nishiyama, S. Arai, Tokyo Institute of Technology, Tokyo,Japan, and K. Yamada, National Institute of Advanced Industrial Science and Technology(AIST), Tsukuba, Japan

We demonstrate a vertical p-n junction silicon Mach-Zehnder modulator constructed withhydrogenated amorphous silicon strip-loaded waveguides on a flat SOI platform. A 3-mm-longphase shifter shows 0.80- to 1.86-Vcm modulation efficiency, 7.3- to 16.9-dBV loss-efficiencyproduct, 3-dB bandwidth of 17 GHz, and 25-Gb/s operation.

1:45 pm–2:00 pmWD2 High-Performance Si Optical Modulator with Strained p-SiGe Layer and Its

application to 25 Gbps Optical Transceiver, J. Fujikata, K. Kinoshita, PhotonicsElectronics Technology Research Association (PETRA), Tsukuba, Japan, J. Han, TheUniversity of Tokyo, Tokyo, Japan, T. Horikawa, S. Takahashi, K. Yashiki, M. Kurihara, Y. Hagihara, Photonics Electronics Technology Research Association (PETRA), Tsukuba,Japan, M. Takenaka, The University of Tokyo, Tokyo, Japan, T. Nakamura, K. Kurata, and T. Mogami, Photonics Electronics Technology Research Association (PETRA), Tsukuba,Japan

We developed a high performance Si optical modulator by applying a p-type-doped strained SiGelayer, which was integrated with high-performance Ge photodetector at around 1.3 μm wavelength.We demonstrated a high modulation efficiency of 1.0 Vcm and 25 Gbps operation with CMOS-driver.

2:00 pm–2:15 pmWD3 a Novel approach to Create a Tunable Fanoresonance with an Extinction Ratio over

40 dB, A. Li and W. Bogaerts, Ghent University-IMEC, Ghent, Belgium

We experimentally demonstrate a novel method tomake a tunable Fano resonance. Based on asilicon microringwith two tunable reflectors inside, we are able to generate atunable Fano resonancewith maximum extinction ratio over 40 dB and a slope rate over 700 dB/nm.

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2:15 pm–2:30 pmWD4 Electrical Trimming of the Resonance of a Silicon Micro-Ring Resonator,

A. P. Knights, Z. Wang, D. Paez, and L. Dow, McMaster University, Hamilton, ON,Canada

Post-fabrication trimming of a silicon micro-ring resonator is demonstrated using an electricallymediated process. The resonance of a fully fabricated ring is permanently blue-shifted by 240 pmafter diffusion from local reservoirs of boron dopant. Thermal energy is supplied by an integratedheater.

2:30 pm–2:45 pmWD5 High-Performance Sub-Wavelength Engineered Silicon Bragg-Rejection Filters,

D. Pérez-Galacho, D. Oser, C. Alonso-Ramos, F. Mazeas, X. Le Roux, W. Zhang, D. Marris-Morini, Université Paris-Saclay, Orsay, France, L. Labonté, S. Tanzilli,Université Côte d’Azur, Nice, France, E. Cassan, and L. Vivien, Université Paris-Saclay,Orsay, France

We present high-performance Bragg filters based on Si sub-wavelength engineering. We demonstrated a novel differential configuration approach that relaxes fabrication constraints. Single-etch filterswith corrugation widths of 150 nm allowed measured wavelength rejection exceeding 40 dB withnarrow bandwidths as low as 1.1 nm.

2:45 pm–3:30 pm Grand Ballroom BExhibits / Coffee Break

3:30 pm–4:30 pm Grand Ballroom aSession WE Control and Tuning TechnologySession Chair Yu Yu, Huazhong University of Science and Technology

3:30 pm–4:00 pm (Invited)WE1 active/Passive Photonic Components and Circuits on Silicon, T. Chu, Zhejiang

University

4:00 pm–4:15 pmWE2 Novel adaptive Driving Method Enabling Better High-Frequency Performance for

Silicon Mach-Zehnder Modulator, G. Cong, M. Ohno, Y. Maegami, M. Okano, and K. Yamada, National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Japan

We propose an adaptive distributed-bias driving method for silicon travelling-wave Mach-Zehndermodulators and achieved ~25% modulation efficiency enhancement at both 10 and 25 Gb/s with<3.5 Vpp, without optimizing horizontal PN-diodes. This method also suggests a new modulatorscheme allowing efficiency improvement and design flexibilities.

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4:15 pm–4:30 pmWE3 Intrinsic Resonance Stabilization in Depletion-Type Silicon Micro-Ring Modulators,

Z. Wang, D. J. Paez, L. Dow, and A. P. Knights, McMaster University, Hamilton, ON,Canada

A method is proposed for locking the resonance of a high-bandwidth, silicon micro-ring modulatorusing intrinsic-defect-mediated-photon-absorption. The photo-signal is generated by the modulator,and thus the need for a waveguide tap is negated. A digital PID loop is used for stabilization.

4:30 pm–5:30 pm Grand Ballroom aIndustry Forum

5:30 pm–7:00 pm Grand Ballroom BSession WP Welcome Reception / Poster I Session Chair Lars Zimmerman, IHP, Germany

5:30 pm–7:00 pmWP1 Fabrication of Silicon Slot Waveguides with 10nm Wide Oxide Slot, K. Debnath,

A. Z. Khokhar, G. T. Reed, and S. Saito, University of Southampton, Southampton, UnitedKingdom

We propose and demonstrate a fabrication technique to realize extremely narrow dielectric slots insilicon waveguides. Using this method, we have demonstrated a silicon slot waveguide with 10 nmdielectric slot with a measured propagation loss of 13.6 dB/cm.

WP2 Phase Trimming of Mach-Zehnder Interferometers by Laser annealing ofGermanium Implanted Waveguides, X. Chen, M. M. Milosevic, D. J. Thomson, A. Z. Khokhar, Y. Franz, A. F. J. Runge, S. Mailis, A. C. Peacock, and G. T. Reed,University of Southampton, Southampton, United Kingdom

We demonstrate a new post-fabrication trimming technique to fine-tune the phase of integratedMach-Zehnder Interferometers (MZIs), enabling permanent correction of typical fabrication basedphase errors. Preliminary results demonstrate a phase trimming accuracy of 0.146 π.

WP3 Thermo-Optical Switching in Hybrid VO2/Si Waveguides by Lateral DisplacedMicroheaters, L. Sanchez, A. Rosa, A. Griol, Univ. Pol. de València, Valencia, Spain, M. Menghini, P. Homm, B. Van Bilzen, J.-P. Locquet, KU Leuven, Leuven, Belgium, C. Mai, L. Zimmermann, IHP, Frankfurt, Germany and P. Sanchis, Univ. Pol. de València,Valencia, Spain

A lateral displaced microheater is demonstrated for switching across the VO2 phase transition inultra-short hybrid VO2/Si waveguides for both TE and TM light polarizations. Simulation andexperimental results are obtained showing a very good agreement with a switching electrical powerof around 10mW.

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WP4 a NIR-LED Based on Tensile Strained, Heavily Doped Ge/Si µ-Strips Fabricated in aBiCMOS Pilot Line, G. Capellini, S. Lischke, L.-W. Nien, IHP, Frankfurt (Oder),Germany, J. Kreissl, IHP, Frankfurt (Oder), Germany and Technische Universität Berlin,Berlin, Germany, Y. Yamamoto, IHP, Frankfurt (Oder), Germany, M. Virgilio, IHP,Frankfurt (Oder), Germany and Università di Pisa, Pisa, Italy, J. Schäffner, W. M. Klesse,D. Wolansky, IHP, Frankfurt (Oder), Germany, K. Voigt, Technische Universität Berlin, Berlin, Germany, L. Zimmermann, A. Mai, B. Tillack, and T. Schroeder, IHP,Frankfurt (Oder), Germany

We present an edge-light emitting diode based on highly doped Ge/Si µ-strips starined by a SiN topstressor. The device, manufactured in a BiCMOS pilot line, shows RT NIR electroluminescence in aspectral region extending from the C- to the U- telecom bands and beyond

WP5 Optical Proximity Correction in Geometry Sensitive Silicon Photonics WaveguideCrossings, D. Celo, P. Dumais, Huawei Technologies Canada Co., Ltd., Ottawa, ON,Canada, W. Liu, Huawei Technologies Co., Ltd., Shenzhen, China, C. Zhang, D. J.Goodwill, J. Jiang, and E. Bernier, Huawei Technologies Canada Co., Ltd., Ottawa, ON,Canada

Silicon waveguide crossings using multi-mode interferometers are highly sensitive to geometry atthe internal corners. Optical proximity correction was developed using design-of-experimentswithout sophisticated foundry modeling. This simple technique improved loss by a factor of 2, to<30 mdB, while maintaining flatness over C-band.

WP6 HWCVD a-Si:H Interlayer Slope Waveguide Coupler for Multilayer SiliconPhotonics Platform, R. Petra, S. Z. Oo, A. Tarazona, R. Cernansky, S. Reynolds, D. J. Thomson, A. Z. Khokhar, A. Politi, G. Z. Mashanovich, G. T. Reed, and H. M. H.Chong, University of Southampton, Southampton, United Kingdom

We present an interlayer slope waveguide, designed to guide light from one level to another inmultilayer silicon photonics platform. The waveguide is fabricated using HWCVD a-Si:H at 350°C.Measured loss of 0.5 dB/slope was obtained at wavelength of 1550 nm for TE mode polarization.

WP7 Tensile Strained GeSn Mid-Infrared Light Emitters, R. W. Millar, D. C. S. Dumas, K. Gallacher, University of Glasgow, Glasgow, United Kingdom, P. Jahandar, M. Myronov,University of Warwick, Coventry, United Kingdom, and D. J. Paul, University of Glasgow,Glasgow, United Kingdom

Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated intomicrodisks and strained using silicon nitride stressors. The strained disks are measured to be tensileby Raman spectroscopy, and demonstrate direct bandgap emission in the 3–5 μm gas sensingwindow.

WP8 The Electronic Band Structure of Ge1-xSnx in the Full Composition Range: Indirect,Direct, and Inverted Gaps Regimes, Band Offsets, and the Burstein-Moss Effect, P. Scharoch, M. P. Polak, and R. Kudrawiec, Wroclaw Univ. of Science and Technology,Wroclaw, Poland

A comprehensive study of the Ge1-xSnx alloy in the full composition range using state-of-the-artdensity functional theory methods has been performed. Various conclusions shedding new light onits properties, in relation to experiment, like gaps regimes, band offsets, and the Burstein-Mosseffect, has been drawn.

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WP9 Reduction of Optical Bleaching in Phosphorus Doped Ge Layer on Si, S. A. Srinivasan, IMEC, Heverlee, Belgium and Ghent University, Ghent, Belgium, C. Porret, M. Pantouvaki, IMEC, Heverlee, Belgium, Y. Shimura, IMEC, Heverlee,Belgium and Shizuoka University, Hamamatsu, Japan, P. Geiregat, Ghent University,Ghent, Belgium, R. Loo, J. Van Campenhout, IMEC, Heverlee, Belgium, D. Van Thourhout, Ghent University, Ghent, Belgium

Optical bleaching is studied on undoped and highly doped Ge layer on Si using Transient AbsorptionSpectroscopy. Upon optical pumping, doped Ge showed a reduction in optical bleaching ascompared to undoped Ge due to the homogeneous broadening effect in doped Ge.

WP10 Integration of Carbon Nanotubes on Silicon Photonics Resonators, E. Durán-Valdeiglesias, W. Zhang, T.-H.-C. Hoang, C. Alonso-Ramos, X. Le Roux, S. Serna,Université Paris-Saclay, Orsay, France, M. Balestrieri, Université Paris-Saclay, Gif-sur-Yvette, France, D. Marris-Morini, Université Paris-Saclay, Orsay, France, F. Intonti, F. Sarti, N. Caselli, F. La China, F. Biccari, M. Gurioli, University of Florence EuropeanLaboratory for Non-Linear Spectroscopy, Sesto Fiorentino (FI), Italy, A. Filoramo,Université Paris-Saclay, Gif-sur-Yvette, France, E. Cassan, and L. Vivien, UniversitéParis-Saclay, Orsay, France

We report on the integration of carbon nanotubes in silicon micro-cavities to develop cost-effectivelight sources. Strong light coupling from carbon nanotubes was demonstrated into silicon photonicsresonators, nanobeam cavities and photonic crystals.

WP11 Strained Silicon Photonics for Pockels Effect Based Modulation, M. Berciano, P. Damas, G. Marcaud, X. Le Roux, P. Crozat, C. Alonso-Ramos, D. Benedikovic, D. Morini, E. Cassan, and L. Vivien, Université Paris-Saclay, Orsay, France

We present on experimental results of strain-induced Pockels effect in silicon based on Mach-Zehnder interferometer modulators. We theoretically studied both Pockels effect and carrier parasiticeffect in silicon under an electric field. We demonstrated high speed Pockels-based opticalmodulation up to 25 GHz.

WP12 Broad Wavelength Generation and Conversion with Multi Modal Four Wave Mixingin Silicon Waveguides, S. Signorini, M. Mancinelli, University of Trento, Trento, Italy, M. Bernard, University of Trento, Trento, Italy and Bruno Kessler Foundation, Trento,Italy, M. Ghulinyan, G. Pucker, Bruno Kessler Foundation, Trento, Italy, and L. Pavesi,University of Trento, Trento, Italy

We demonstrate spontaneous and stimulated Four Wave Mixing (FWM) in silicon waveguides withmulti modal phase matching as a mean for tunable and large wavelength conversion and generation.We obtained a distance between the generated idler and signal of more than 750 nm.

WP13 High-Speed, High-Responsivity Ge Photodiode with NiSi Contacts for an advancedPhotonic BiCMOS Technology, S. Lischke, D. Knoll, D. Wolansky, M. Kroh, A. Peczek,and L. Zimmermann, IHP, Frankfurt (Oder), Germany

We will show that contacting a high-performance Ge photodiode with NiSi instead of CoSi2 has nonegative effect. This result strongly supports the development of an advanced photonic BiCMOSprocess where the RF performance of SiGe HBTs can take strong benefit from the “cold” NiSi.

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WP14 Germanium-on-Silicon Waveguides for Mid-Infrared Photonic Sensing Chips, K. Gallacher, University of Glasgow, Glasgow, United Kingdom, L. Baldassarre, SapienzaUniversity of Rome, Rome, Italy, R. W. Millar, University of Glasgow, Glasgow, UnitedKingdom, A. Sorgi, Sapienza University of Rome, Rome, Italy, V. Giliberti, Istituto Italianodi Tecnologia, Rome, Italy, J. Frigerio, G. Isella, Politecnico di Milano, Como, Italy, I. Figliolia, P. Biagioni, Politecnico di Milano, Milano, Italy, M. Michele, SapienzaUniversity of Rome, Rome, Italy, and D. J. Paul, University of Glasgow, Glasgow, United Kingdom

Germanium-on-silicon rib waveguides are modelled, fabricated and characterized with a novel near-field infrared spectroscopy technique that allows on-chip investigation of the waveguide lossesat 5.8 um wavelength.

WP15 Manufacturing Variability Estimations for Deposited Silicon Photonic Circuits, T. Lipka and H. k. Trieu, Hamburg University of Technology, Hamburg, Germany

We present a comprehensive study of deposited silicon microring resonators for photonic-integratedcircuitry. Refractive index, thickness, and widths variations are estimated. The statistical deviationsare sufficiently low to realize photonic circuits of high quality for instance deposited on varioussubstrates and integrated with heterogeneous materials.

WP16 Tensile-Strained GeSn/SiGeSn Multiple Quantum Wells Laser Wrapped in Si3N4Liner Stressor, Y. Liu, S. Zhang, X. Gao, Y. Wang, J. Zhang, G. Han and Y. Hao, XidianUniversity, Xi’an, China

A tensile-strained GeSn/SiGeSn multiple quantum well (MQW) laser wrapped in Si3N4 liner stressoris designed and characterized theoretically. The boosting effects of tensile strain introduced into theGeSn/SiGeSn MQW laser by Si3N4 liner stressor on the threshold current density and optical gainare demonstrated.

WP17 Hybrid NIR/MIR Beam Splitter (De)Multiplexer on SOI Platform, M.-S. Rouifed, Nanyang Technological University, Singapore, C. G. Littlejohns, Nanyang TechnologicalUniversity, Singapore and University of Southampton, Southampton, United Kingdom, G. X. Tina, H. Qiu, Nanyang Technological University, Singapore, J. Soler Penades, M. Nedeljkovic, University of Southampton, Southampton, United Kingdom, Z. Zhang, C. Liu, D. J. Thomson, G. Z. Mashanovich, G. T. Reed, University of Southampton,Southampton, United Kingdom, and H. Wang, Nanyang Technological University,Singapore,

We present an ultra-compact MMI-based beam splitter (de)multiplexer for the NIR/MIR wavelengthof 1.55 μm and 2 μm based on silicon-on-insulator (SOI) substrate. Simulations and fabrication ofsuch device are performed and exhibits extremely low insertion losses, high contrasts and cross-talkfor both wavelengths.

WP18 Carrier Dynamics analysis in Metal-Semiconductor-Metal Device for Mid-IR SiliconPhotonics, A. T. L. Hui, Y. Ding, H. Hu, and M. Galili, Technical University of Denmark,Lyngby, Denmark

A modelling platform for active carrier removal based on metal-semiconductor-metal structure isreported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist ingeometric singularities and curly trajectory of carriers should be considered when accuratelyestimating the effective carrier lifetime.

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WP19 Cross-Slot Waveguide and Compact Straight Slotted Resonator Based Bio-ChemicalSensors, S. Ghosh, City, University of London, London, United Kingdom, C. Pan,Southeast University, Nanjing, China, and B. M. A. Rahman, City, University of London,London, United Kingdom

Two novel designs of integrated bio-chemical sensor incorporating an integrated cross-slotwaveguide and a compact straight vertical slotted resonator with high sensitivity and small physicalfootprint are reported.

WP20 Plasmonic Germanium Resonators for CMOS Compatible Terahertz Chem-BioSensing Platform, S. Guha, M. Kazmierczak, Leibniz Institute for InnovativeMicroelectronics, Berlin, Germany, M. Betthenhausen, University of Kassel, Kassel,Germany, O. Skibitzki, Leibniz Institute for Innovative Microelectronics, Berlin, Germany,C. You, University of Osnabrück, Osnabrück, Germany, J. Mitzloff, Leibniz Institute forInnovative Microelectronics, Berlin, Germany, J. Flesch, C. You J. Piehler, University ofOsnabrück, Osnabrück, Germany, B. Witzigmann, University of Kassel, Kassel, Germany,and T. Schroeder, Leibniz Institute for Innovative Microelectronics, Berlin, Germany

This work demonstrates plasmon based Germanium (Ge) resonators fabricated on standardBiCMOS technology operating at THz frequency range for chem-bio sensing. The Ge resonatorsoperate at 0.55 THz and is shown to sense chem bio adlayers on top of them.

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THURSDay, 24 aUGUST 2017

8:00 am–9:45 am Grand Ballroom aSession Tha Silicon Nitride Photonics for SensingSession Chair Christian Koos, Karlsruhe Institute of Technology (KIT)

8:00 am–8:30 am (Invited)Tha1 EU Pilot Lines for Integrated Photonics, J.-M. Fedeli, S. Nicoletti, CEA-LETI,

Grenoble, France, L. Lagae, IMEC, Leuven, Belgium, I. Artundo, VLC Photonics S.L.,Valencia, Spain, and P. O’Brien, Tyndall, Cork, Ireland

Three EU pilot lines dealing with integrated optics have been set up. PIX4life is focused on SiNPICs, MIRPHAB on optical sensors for chemical sensing, PIXAPP on photonics packaging.

8:30 am–9:00 am (Invited)Tha2 Spectroscopic Sensing and applications in Silicon Photonics, E. Ryckeboer, X. Nie,

A. Dhakal, D. Martens, P. Bienstman, G. Roelkens, and R. Baets, Ghent University-IMEC,Ghent, Belgium

We report on miniaturized spectroscopic sensors that are realized using Silicon Photonicstechnology. This technology relies on CMOS compatible processes to fabricate both Silicon andSilicon-Nitride based photonics integrated circuits. Various spectroscopic sensor designs andapplications are discussed.

9:00 am–9:15 amTha3 Ultra-wide Band (400–1700 nm) Integrated Spectrometer Based on arrayed

Waveguide Gratings for Spectral Tissue Sensing, D. Geuzebroek, A. van Rees, E. Klein,LioniX International B.V., Enschede, The Netherlands, and K. Lawniczuk, BrightPhotonics B.V., Eindhoven, The Netherlands

We describe the use of photonic integrated circuits as a ultra-wide band spectrometer for spectraltissue sensing in the wavelength range of 400 to 1700nm. Measurements show that all individualarrayed waveguide gratings, fabricated in TriPleX™ technology, work as expected and demonstratethe broadband operation.

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9:15 am–9:30 amTha4 Tunable Index Back End of Line Platform for Enhanced Integrated Photonics,

F. Y. Gardes, C. Lacava, K. Debnath, T. D. Bucio, M. Banakar, S. Stankovic, A. Alattili, A. Z. Khokhar, S. Saito, P. Petropoulos, University of Southampton, Southampton, UnitedKingdom, I. Molina-Fernández, R. Alir, A. Ortega-Moñux, J. G. Wangüemert-Pérez,Universidad de Málaga, Málaga, Spain, Y. Chen, J.-J. He, Zhejiang University, Hangzhou,China, P. Cheben, and J. H. Schmid, National Research Council Canada, Ottawa, ON,Canada

We demonstrate a back end of line compatible SiN based material with tunable refractive indexenabling low optical loss, high non-linear Kerr response, low index photonic crystals, highefficiency couplers, low loss waveguides and temperature tolerant MUX for DWDM.

9:30 am–9:45 amTha5 Waveguide Optical Tweezers for Selective Cell Lysis, S. A. Kahn, A. C. Ceballos,

A. K. Ellerbee Bowden, and O. Solgaard, Stanford University, Stanford, CA, USA

Waveguide evanescent fields enable lysing of selected red blood cells. Cells are trapped onwaveguides and are lysed by rapidly reducing the trapping forces. Red blood cells of different agerequire different levels of lysing power, allowing selective lysing of crenate cells.


10:15 am–12:00 pm Grand Ballroom aSession ThB Nanofabrication of Novel Passive DevicesSession Chair Kei May Lau, Hong Kong University of Science and Technology

10:15 am–10:45 am (Invited)

ThB1 a Heterogeneous III-V/Si3N4 Platform for Integrated Quantum and NonlinearPhotonics, K. Srinivasan and M. Davanco, National Institute of Standards andTechnology, Gaithersburg, MD, USA

We use heterogeneous integration to develop a platform capable of combining the deterministicsingle-photon generation and single-photon-level nonlinearities possible in single InAs quantum dotdevices with the low-loss waveguiding and Kerr nonlinear frequency conversion available instoichiometric silicon nitride photonics.

10:45 am–11:00 amThB2 Sub-Wavelength Silicon Grating Metamaterial Ring Resonators, D. Benedikovic,

M. Berciano, X. Le Roux, V. Vakarin, G. Marcaud, C. Alonso-Ramos, E. Cassan, D. Marris-Morini, and L. Vivien, Université Paris-Saclay, Orsay, France

We report on experimental results of silicon micro-ring resonators based on non-resonant photonicmetamaterial waveguides. High extinction ratio up to 30 dB and loaded Q-factors in a range of 1500to 6000 were achieved at a wavelength of 1550 nm.

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11:00 am–11:15 amThB3 Bragg Grating Filter for Suspended Silicon Waveguides, C. Alonso-Ramos, X. Le

Roux, D. Benedikovic, V. Vakarin, E. Durán-Valdeiglesias, D. Oser, D. Pérez-Galacho, E. Cassan, D. Marris-Morini, Université Paris-Saclay, Orsay, France, P. Cheben, NationalResearch Council Canada, Ottawa, ON, Canada, and L. Vivien, Université Paris-Saclay,Orsay, France

We present a novel suspended Si waveguide approach for hybrid near-infrared and mid-infraredoperation. Large waveguide cross-sections allow mid-infrared propagation, while an originalcorrugation yields effective single-mode near-infrared operation. Exploiting this concept, wedemonstrated Bragg filters with 4 nm bandwidth and 40 dB rejection.

11:15 am–11:30 amThB4 Fully Suspended Mid-Infrared Racetrack Resonator with Subwavelength Grating

Cladding, W. Zhou, The Chinese University of Hong Kong, Shatin, Hong Kong, Z. Cheng, The University of Tokyo, Tokyo, Japan, X. Wu, B. Zheng, X. Sun, and H. K. Tsang, The Chinese University of Hong Kong, Shatin, Hong Kong

A fully suspended mid-infrared racetrack resonator is experimentally demonstrated. It has goodmechanical stability and broad spectral range of transparency. The measured loaded optical Q factoris 16,440 at 2402.38 nm, with an extinction ratio of 11.83 dB.

11:30 am–11:45 amThB5 Fabrication of Vertically Curved Si Surface Optical Coupler Coupling with 5-µm-

Mode-Field-Diameter Optical Fiber, Y. Atsumi, T. Yoshida, E. Omoda, and Y. Sakakibara, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

A vertically curved Si surface optical coupler for high-numerical-aperture optical fibers with 5-µm-mode-field-diameter was fabricated. The dome-like SiO2 coupler-top could be successfully formed,and the coupler showed optical coupling with loss of 5.2 dB and the 0.5-dB bandwidth of 110 nm.

11:45 am–12:00 pmThB6 Three-Mode Synthesis of Slab Gaussian Beam in Ultra-Low-Loss In-Plane

Nanophotonic Silicon Waveguide Crossing, P. Dumais, D. J. Goodwill, D. Celo, J. Jiang,and E. Bernier, Huawei Technologies Canada Co., Ltd, Ottawa, ON, Canada

We demonstrate experimentally a fundamentally new low-loss silicon nanophotonic in-planecrossing. The crossing operation uses a three-mode synthesis of a 1-D Gaussian beam. Themeasured loss is 0.007 dB ± 0.004 dB, which is the lowest reported loss for silicon waveguidecrossings.


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1:30 pm–3:00 pm Grand Ballroom aSession ThC Data Transmission ModulesSession Chair Koji Yamada, National Institute of Advanced Industrial Science and Technology

(AIST)

1:30 pm–2:00 pm (Invited)

ThC1 Industrial Installation of Optical I/O Cores Based on Si Photonics, K. Kurata,Photonics Electronics Technology Research Association, Tsukuba, Japan

2:00 pm–2:15 pmThC2 25 Gb/s Error-Free Transmission with a Packaged Chipset Integrating a III-V/SOI

DFB Laser, an Electro-absorption Modulator and a Semiconductor Opticalamplifier, I. Ghorbel, A. Gallet, A. Shen, D. Carrara, D. Make, G. Levaufre, G.-H. Duan,III-V Lab, a joint lab of Nokia, Thales and CEA, Palaiseau, France, S. Olivier, C. Jany, S. Malhouitre, C. Kopp, CEA LETI, Grenoble, France, C. Eason and P. O’Brien, TyndallNational Institute, Cork, Ireland

We report on the first hybrid III-V on silicon integration of a DFB laser, an electro-absorptionmodulator and a semiconductor optical amplifier. We packaged the fabricated chipset and validatedthe module through 25 Gb/s error-free transmissions for short reach communication applications.

2:15 pm–2:30 pmThC3 Co-Integration of a Temperature Tolerant Low Impedance Resonantly Enhanced

Silicon Photonics Modulator, A. Moscoso-Mártir, J. Nojic, S. Romero-García, S. SharifAzadeh, B. Shen, RWTH Aachen University, Aachen, Germany, D. E. Rasmussen, M. Nielsen, Mellanox Technologies, Roskilde, Denmark, A. Sandomirsky, A. Badihi, S. Rockman, Mellanox Technologies, Yokneam, Israel, F. Merget, RWTH AachenUniversity, Aachen, Germany, R. Setter, E. Mentovich, Mellanox Technologies, Yokneam,Israel, and J. Witzens, RWTH Aachen University, Aachen, Germany,

We report on an optically wideband, resonantly enhanced Mach-Zehnder modulator co-integratedwith a 4Ω output impedance, 28 Gbd driver from Mellanox Technologies. Error free transmission isdemonstrated, at 14 Gbps (25 Gbps), in 4 nm (3 nm) wide optical wavelength range at a 10 mW (20 mW) laser output power level.

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2:30 pm–2:45 pmThC4 1.5-μm Directly Modulated Transmission Over 66 km of SSMF with an Integrated

Hybrid III-V/SOI DFB Laser, V. Cristofori, F. Da Ros, Technical University of Denmark,Lyngby, Denmark, M. E. Chaibi, University of Rennes, Lannion, France, Y. Ding,Technical University of Denmark, Lyngby, Denmark, L. Bramerie, University of Rennes,Lannion, France, A. Shen, A. Gallet, G.-H. Duan, III-V Lab, a joint lab of Nokia, Thalesand CEA, Palaiseau, France, K. Hassan, S. Olivier, CEA-LETI, Grenoble, France, L. K. Oxenløwe, Technical University of Denmark, Lyngby, Denmark, and C. Peucheret,University of Rennes, Lannion, France

A hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μm is fabricated, showing a sidemode suppression ratio above 50 dB and a 3-dB bandwidth of 12 GHz. Error-free transmission(BER<10–9) at 10 Gb/s over 66-km SSMF is demonstrated without dispersion compensation andFEC.

2:45 pm–3:00 pmThC5 High Reflection Tolerance of Quantum Dot Distributed Feedback Lasers for Silicon

Photonics Transmitters, N. Hatori, K. Mizutani, S.-H. Jeong, Y. Tanaka, and K. Kurata,Photonics Electronics Technology Research Association (PETRA), Tsukuba, Japan

We demonstrated high reflection tolerance of a quantum dot distributed feedback laser. Lasercharacteristics of single mode operation of 40 dB SMSR and high power operation over 15mW were obtained, and significant improvements of tolerance up to –30 dB near end reflection weresuccessfully achieved.


3:30 pm–4:15 pm Grand Ballroom aSession ThD Nonlinear Photonics Session Chair Li Yang, Huawei

3:30 pm–3:45 pmThD1 CMOS Compatible USRN:Si7N3 for Supercontinuum Generation, Parametric

amplification and Four-wave Mixing, T. Wang, Singapore University of Technology andDesign, Singapore and Chinese Academy of Sciences, Beijing, China, K. J. A. Ooi,Singapore University of Technology and Design, Singapore, D. K. T. Ng, Agency forScience, Technology and Research (A*STAR), Singapore, A. K. L. Chee, MassachusettsInstitute of Technology, Cambridge, MA, USA, and D. T. H. Tan, Singapore University ofTechnology and Design, Singapore

We experimentally demonstrate a CMOS compatible optical parametric amplifier based on Si7N3waveguides which are compositionally tailored that the 1550 nm wavelength resides within themulti–photon regime, while possessing large nonlinear parameter of 550 W−1/m, 500 times largerthan that in Si3N4.

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3:45 pm–4:00 pmThD2 Linear and Third Order Nonlinear Optical Properties of GeSbS Chalcogenide

Integrated Waveguides, S. Serna, Université Paris-Saclay, Orsay, France and UniversitéParis Saclay, Palaiseau, France, H. Lin, Massachusetts Institute of Technology-MIT,Cambridge, MA, USA, C. Alonso-Ramos, Université Paris-Saclay, Orsay, France, A.Yadav, University of Central Florida, Orlando, FL, USA, X. Le Roux, Université Paris-Saclay, Orsay, France, K. Richardson, University of Central Florida, Orlando, FL, USA,E. Cassan, Université Paris-Saclay, Orsay, France, N. Dubreuil, Université Paris Saclay,Palaiseau, France, J. Hu, Massachusetts Institute of Technology-MIT, Cambridge, MA,USA, and L. Vivien, Université Paris-Saclay, Orsay, France

We report on the linear and nonlinear measurements of GeSbS chalcogenide glasses in waveguideconfiguration. Single-mode waveguides and ring resonators have been characterized in linear andnonlinear optical regimes around 1.58 µm wavelength demonstrating the interest of using thismaterial for ultrahigh-bandwidth optical communications systems.

4:00 pm–4:15 pmThD3 Third Order Nonlinear Optical Properties of Ge-Rich SiGe Waveguides, S. Serna,

Université Paris-Saclay, Orsay, France and Université Paris Saclay, Palaiseau, France, V. Vakarin, J. M. Ramirez, X. Le Roux, Université Paris-Saclay, Orsay, France, J.Frigerio, A. Ballabio, Politecnico di Milano, Como, Italy, L. Vivien, Université Paris-Saclay, Orsay, France, G. Isella, Politecnico di Milano, Como, Italy, E. Cassan, UniversitéParis-Saclay, Orsay, France, N. Dubreuil, Université Paris Saclay, Palaiseau, France, andD. Marris-Morini, Université Paris-Saclay, Orsay, France

We report on the first third order nonlinear experimental characterization of Ge-rich Si1-xGexwaveguides, with Germanium concentrations x ranging from 0.7 to 0.9. These results will providehelpful insights to assist the design of nonlinear integrated optical devices in the near- and mid-IRwavelength ranges.

4:15 pm–5:45 pm Grand Ballroom BSession ThP Poster IISession Chair Lars Zimmerman, IHP, Germany

4:15 pm–5:45 pmThP1 WDM-compatible 2×2 Optical Switch for Mode-Division Multiplexing on a Silicon

Chip, H. Jia, T. Zhou, Chinese Academy of Sciences, Beijing, China and University ofChinese Academy of Sciences, Beijing, China, L. Zhang, J. Ding, Chinese Academy ofSciences, Beijing, China, and L. Yang, Chinese Academy of Sciences, Beijing, China andUniversity of Chinese Academy of Sciences, Beijing, China

We propose a WDM and MDM compatible 2×2 switch on a silicon chip. It is composed of modemultiplexers, 2×2 single mode optical switch elements, and mode de-multiplexers. We demonstratea prototype which can manipulate four spatial modes with broad wavelength span.

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ThP2 Long Delay Optical Feedback Sensitivity of Hybrid III-V/SOI Directly ModulatedDFB Lasers, A. Gallet, Université Paris-Saclay, Orsay, France and III-V Lab, a joint labof Alcatel-Lucent, Thales and CEA, Palaiseau, France, K. Schires, H. Huang, M. Song,III-V Lab, a joint lab of Alcatel-Lucent, Thales and CEA, Palaiseau, France, A. Accard, D. Make, Université Paris-Saclay, Orsay, France, S. Olivier, CEA LETI, Grenoble,France, G.-H. Duan, III-V Lab, a joint lab of Alcatel-Lucent, Thales and CEA, Palaiseau,France, and F. Grillot, III-V Lab, a joint lab of Alcatel-Lucent, Thales and CEA, Palaiseau,France and University of New Mexico, Albuquerque, NM, USA

Hybrid III-V/SOI DFB lasers subjected to external optical feedback is analyzed. Its impact onoptical spectrum, eye diagram and bit error rate (BER) is discussed.

ThP3 a PaM-4 Optical Receiver Based on a Silicon Photonic Quantizer, W. Xu, ShanghaiJiao Tong University, Shanghai, China, J. Gao, University of Rochester, Rochester, NY,USA, P. Ji, Y. Sun, W. He, Shanghai Jiao Tong University, Shanghai, China, and H. Wu, University of Rochester, Rochester, NY, USA

We propose a new PAM4 receiver architecture based on a silicon photonic quantizer that converts aPAM-4 optical signal into multiple weighted electrical signals. Circuit simulation of this receiver at50-Gbps demonstrates its feasibility and advantages.

ThP4 Passive and active Wavelength Trimming of Temperature-Insensitive Silicon MZI, J.-M. Lee, M.-S. Kim, J. T. Ahn, ETRI, Daejeon, Korea, L. Adelmini, D. Fowler, C. Kopp,CEA LETI, Grenoble, France, C. J Oton, Scuola Superiore Sant’Anna, Pisa, Italy andCNIT, Pisa, Italy, and F. Testa, Ericsson Telecomunicazioni S.p.A., Pisa, Italy

Temperature-insensitive silicon MZI with local heaters is fabricated by DUV lithography.Temperature dependence is less than 5 pm/C but the wavelength can be tuned by the local heater atthe efficiency of 24 mW/FSR. The results are discussed in comparison with permanent wavelengthtrimming by thermal annealing.

ThP5 Silicon PaM-4 Optical Modulator Driven by Two Binary Electrical Signals withDifferent Peak-to-Peak Voltages, L. Zheng, Chinese Academy of Sciences, Beijing, Chinaand University of Chinese Academy of Sciences, Beijing, China, J. Ding, Chinese Academyof Sciences, Beijing, China, S. Shao, Chinese Academy of Sciences, Beijing, China andUniversity of Chinese Academy of Sciences, Beijing, China, L. Zhang, Chinese Academy ofSciences, Beijing, China, and L. Yang, Chinese Academy of Sciences, Beijing, China andUniversity of Chinese Academy of Sciences, Beijing, China

We demonstrate a silicon PAM-4 optical modulator which is driven by two uncorrelated binaryelectrical signals with different peak-to-peak voltages. The device can work at 32 Gbaud in thewavelength range from 1525 nm to 1565 nm.

ThP6 a Method to Optimizing Optical Switch Topology for Photonic Network-on-Chip, T. Zhou, H. Jia, Y. Xia, and L. Yang, Chinese Academy of Sciences, Beijing, China andUniversity of Chinese Academy of Sciences, Beijing, China,

We propose a method to optimize the optical switch by substituting some of the switch elementswith crossings so that the topology can be simplified and the insertion loss can also be effectiveminimized. A six-port optical switch prototype is designed and fabricated on silicon.

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ThP7 Silicon Photonic Wavelength Tunable Laser Diode with Low Loss Direct HeatingPhase Shifter, T. Kita, Y. Chiba, and H. Yamada, Tohoku University, Sendai-shi, Japan

We proposed and demonstrated a compact and low propagation loss thermo-optical phase shifterusing a multi-mode interference for wavelength tunable laser diode.

ThP8 Demonstration of Low Polarization Dependent Loss of 1.3 μm Two DimensionalGrating Coupler, Y. Sobu, S.-H. Jeong, and Y. Tanaka, Photonics Electronics TechnologyResearch Association (PETRA), Tsukuba, Japan

Reduction of the polarization dependent loss (PDL) of 1.3 μm two dimensional grating coupler (2D-GC) was demonstrated by using slanted arrays and cross shaped scatterers. The PDL of 2D-GCwas measured to be <0.5 dB over a 40 nm range at 1.3 μm.

ThP9 Broadband Sub-Wavelength Grating Coupler for O-Band application, Y. Wang, L. Xu, A. Kumar, D. Patel, Z. Xing, R. Li, M. G. Saber, Y. D’Mello, E. El-Fiky, and D. V. Plant, McGill University, Montreal, QC, Canada

We demonstrate a broadband sub-wavelength grating coupler for the O-band application, which hasa simulated coupling efficiency of –3.3 dB with 3-dB bandwidth of 78 nm and a measured couplingefficiency of –4.5 dB with a 3-dB bandwidth of 65 nm for fundamental TE mode.

ThP10 2D Integrating Cell Waveguide Platform Employing Ultra-Long Optical PathLengths, L. S. Fohrmann, G. Sommer, Hamburg University of Technology, Hamburg,Germany, G. Pitruzzello, T. F. Krauss, University of York, York, United Kingdom, A. Y. Petrov, Hamburg University of Technology, Hamburg, Germany and ITMOUniversity, St. Petersburg, Russia, and M. Eich, Hamburg University of Technology,Hamburg, Germany and Helmholtz-Zentrum Geesthacht, Geesthacht, Germany

A 2D integrating cell waveguide platform is presented where ultra-long optical path lengths in asmall area are realized by multiple reflections of a guided signal at PhC boundaries. In experiments,path lengths of 25 cm are demonstrated in integrating cells with 1.8 mm radius.

ThP11 Design and Integration of an O-Band Silicon Nitride aWG for CWDM applications,S. Guerber, STMicroelectronics SAS, Crolles, France and Université Paris-Saclay, Orsay,France, C. Alonso-Ramos, D. Perez-Galacho, X. Le Roux, Université Paris-Saclay, Orsay,France, N. Vulliet, S. Crémer, STMicroelectronics SAS, Crolles, France, D. Marris-Morini,Université Paris-Saclay, Orsay, France, F. Boeuf, STMicroelectronics SAS, Crolles,France, L. Vivien, Université Paris-Saclay, Orsay, France, and C. Baudot,STMicroelectronics SAS, Crolles, France

Experimental demonstration of an O-band four channel CWDM silicon nitride AWG is reported.Specificity of low order array has been explored through multiple devices among which insertionloss below 2.3dB, crosstalk level as high as 37dB and polarization insensitive spectral responseflattening is obtained.

ThP12 Optimized 32-Channel Silicon Hybrid Demultiplexer Fabricated with CMOSTechnology, J. Wang, S. Deng, C. Y. Wong, Y. Wen, W. Wei, T. Wang, G. N. Liu, E. Zhou, and L. Liu, Huawei Technologies Co., Ltd., Shenzhen, China

We presented a 32-channel silicon hybrid demultiplexer fabricated with CMOS technology. Double-etched mode converter and wide arrayed waveguide are used to improve AWG performances whilethe counter-tapered coupler is optimized for broadband mode multiplexing.

29

ThP13 a Novel Scheme to Excite SOI Slot Waveguide Mode, V. Mere, R. Kallega, and S. K. Selvaraja, Indian Institute of Science, Bangalore, India

This paper presents a novel robust method to excite a slot waveguide mode. We experimentallydemonstrate the fundamental slot-mode excitation in a Si slot-waveguide ring resonator.Furthermore, we also demonstrate nearly athermal (12 pm/°C) behaviour of PMMA filled slottedring resonator

ThP14 Sealed and Compact Fiber Links to Integrated Photonics Using Grating Couplers, N. Hoppe, M. Haug, T. Polder, M. Félix Rosa, W. Vogel, P. Scheck, L. Rathgeber, D. Widmann, and M. Berroth, University of Stuttgart, Stuttgart, Germany

We present a sealed, permanent, compact and efficient optical fiber-to-chip interface utilizing thewide-spread grating coupler. The easily produced fiber link is based on the reflection in an angle-polished fiber with a reflective metal coating. Efficiencies for different coupling methods to gratingcouplers are compared.

ThP15 Faraday Rotation in Silicon Waveguides, D. Jalas, N. Hakemi, Hamburg University ofTechnology, Hamburg, Germany, M. Cherchi, M. Harjanne, VTT Technical ResearchCentre of Finland, Espoo, Finland, A. Y. Petrov, Hamburg University of Technology,Hamburg, Germany and ITMO University, St. Petersburg, Russia, and M. Eich, HamburgUniversity of Technology, Hamburg, Germany and Helmholtz-Zentrum Geesthacht,Geesthacht, Germany

We investigate the possibility of using silicon waveguides as Faraday rotators for optical isolators.We employ multimode waveguides with a square cross-section. This approach offers the opportunityto introduce integrated nonreciprocal components into the silicon-on-insulator platform withoutcomplication of an additional magneto-optical material.

ThP16 Study of Backend Waveguide arrays for adiabatic Coupling to Si Waveguides, K. Voigt, Technische Universität Berlin, Berlin, Germany and IHP, Frankfurt (Oder),Germany, V. Brulis, Photon Design, Oxford, United Kingdom, K. Petermann, TechnischeUniversität Berlin, Berlin, Germany and L. Zimmermann, Technische Universität Berlin,Berlin, Germany and IHP, Frankfurt (Oder), Germany

We compare the performances of different spot size converter (SSC) designs consisting of backendwaveguide arrays (“dot-like”, “cross-like, “stripes”, “box”) at the facet, adiabatically coupled totapered Si waveguides. For the study, we use SiON waveguides and a low index step “box”waveguide.

ThP17 Spectral Variation analysis for Silicon Grating Couplers Fabricated on a 300-mmSOI Wafer, T. Horikawa, Photonics Electronics Technology Research Association(PETRA), Tsukuba, Japan and National Institute of Advanced Industrial Science andTechnology (AIST), Tsukuba, Japan, D. Shimura, J. Ushida, Y. Sobu, A. Shiina, M. Tokushima, S.-H. Jeong, K. Kinoshita, and T. Mogami, Photonics ElectronicsTechnology Research Association (PETRA), Tsukuba, Japan

Spectral variation behavior for many grating couplers is experimentally investigated. It was foundthat the coupling wavelength is shifted by fabrication deviations in grating structure, and gratingdepth variation in 300-mm wafer processes is precisely derived by numerical analysis for couplingwavelength variation.

30

ThP18 Electro-Optic Phase Modulators Based on Transparent-Conducting-Oxide LoadedSilicon Waveguides, G. Sinatkas, I. Skandalos, T. Christopoulos, and E. E. Kriezis,Aristotle University of Thessaloniki, Thessaloniki, Greece

Electro-optic phase modulation schemes are investigated by inducing carrier-concentration changesin transparent conducting oxide semiconductors, integrated in well-established silicon-photonicplatforms. By exploiting the epsilon-near-zero effect, binary phase-shift keying modulation ismanifested, resulting in high-speed modulation solutions of reduced footprint, compared to theconventional all-silicon designs.

ThP19 advanced High Speed Slow-Light Silicon Modulators in the O-Band for Low PowerOptical Interconnects in Data Centers, A. Zanzi, A. Rosa, A. Griol, P. Sanchis, J. Marti,and A. Brimont, Universitat Politècnica València, Valencia, Spain

This paper presents the design and preliminary results of a low power, compact and high-speedmodulator in the O-band featuring apodized slow-light structures and a slow-wave RF design. The device is a candidate for future single mode optical interconnects in large-scale data centers

ThP20 an Ultra-Compact MMI-Based Wavelength Diplexer Employing SubwavelengthGrating, L. Liu, Q. Deng, and Z. Zhou, Peking University, Beijing, China

Through the refractive index engineering of the subwavelength grating, an ultra-compact multimodeinterference based diplexer is proposed and demonstrated. It is 43.4 μm in length, only ~30% of itsconventional counterpart and displays a wide 1dB bandwidth >120nm.

ThP21 Tunable Mode Hybridisation in Compact SOI Coupled Ring Cavity, A. Pandey and S. K. Selvaraja, Indian Institute of Science, Bengaluru, India

We propose and experimentally demonstrate a coupled micro-ring cavity system. The cavity enablestunable resonance mode spacing, with mode spacing as low as 27.5 GHz is demonstrated in afootprint that is 87% less than a conventional single cavity system.

ThP22 a S-Bend Multimode Interference with Optical Delay and Power Divider forBroadband WDM Filtering, S.-H. Hsu, Y.-C. Chung, and Y.-C. Yang, National TaiwanUniversity of Science and Technology, Taipei, Taiwan, R.O.C.

A s-bend multimode interference (MMI) on 5-micron thick silicon-on-insulator experimentallydemonstrated the relative optical delay and coupling power coefficient as 18.3-micron and 0.95,respectively. This s-bend MMI based Mach-Zehnder interferometer wavelength filter could illustrateprocess-insensitive performance on the flat top response and isolation.

ThP23 Guard-Ring Dependence of Noise Characteristics for Single-Photon avalancheDiodes in a Standard CMOS Technology, J. Rhim, Hewlett Packard Enterprise, PaloAlto, CA, USA, K. Yu, P.-H. Chang, S. Palermo, Texas A&M University, College Station,TX, USA, C. Li, M. Fiorentino, R. Beausoleil, Hewlett Packard Enterprise, Palo Alto, CA,USA, and M.-J. Lee, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland

We investigate the effects of guard-ring structure on noise characteristics for CMOS-compatiblesingle-photon avalanche diodes (SPADs). SPADs with different guard-ring structures are fabricatedin standard 0.18-μm CMOS technology and the noise characteristics as dark current, dark-count rateand afterpulsing probability are measured and analyzed.

31

ThP24 Realization of Counter-Doped Silicon Modulators for Efficient Silicon OpticalInterposers, V. Reboud, M. Fournier, B. Szelag, B. Blampey, P. Gindre, T. Ferrotti, O. Dubray, D. Fowler, E. Grellier, O. Lemonnier, Y. Thonnart, and S. Bernabé, Univ.Grenoble Alpes, Grenoble, France

We fabricated counter-doped ring resonator modulators that guarantee the absence of unexpected p-i-n junctions in the ring waveguide due to overlay misalignments inherent to successive lithographic steps. Fabricated ring resonator modulators showed good efficiency (VπL at 1.55 V.cm at –1V) andtransmission at 10 Gb.s–1.

Gala Dinner Cruise

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FRIDay, 25 aUGUST 2017

8:00 am–8:45 am Grand Ballroom aSession Fa Plenary II Session Chair Jeremy Witzens, RWTH Aachen University

8:00 am–8:45 am (Plenary)Fa1 Physics of High-Q Microresonators: Optomechanics & Frequency Combs,

T. Kippenberg, EPFL – Ecole Polytechnique de Lausanne, Switzerland

8:45 am–10:00 am Grand Ballroom aSession FB Silicon Photonics for Sensing Session Chair Andrew Poon, Hong Kong University of Science and Technology


FB1 Silicon-Based Cascaded Microring for Optical Sensing, J. He, Zhejiang University


FB2 Free-Space Coupled Silicon Photonic Crystal Refractometric Membrane Sensors, Y. Sun, Y. Liu, and W. Zhou, University of Texas at Arlington, Arlington, TX, USA

We report free-space coupled single-layer and coupled bi-layer silicon photonic crystal refractiveindex sensing schemes. High quality factor and low detection limit sensor cavities were designedand demonstrated experimentally based on mode engineering.

9:45 am–10:00 amFB3 Ge PIN Photodetectors with Nanohole arrays for Refractive Index Sensing,

L. Augul, R. Körner, S. Bechler, J. Schulze, and I. A. Fischer, University of Stuttgart, Stuttgart, Germany

We present an experimental realization of an integrated biosensor consisting of a Ge PINphotodetector with an Al nanohole array in its contact metal layer. The device responsivity stronglydepends on the surrounding refractive index, making the device suitable for integrated sensing atreduced size.


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10:30 am–12:00 pm Grand Ballroom aSession FC Towards Novel applicationsSession Chair Wim Bogaerts, Ghent University


FC1 Silicon Photonics for applications in Quantum Technologies, M. G. Thompson,University of Bristol

Quantum photonic technologies have the potential to revolutionise our information andcommunication systems, enabling ultra-secure communication and advanced computation withapplications in quantum simulation and machine learning. Here we overview the potential of siliconphotonics to realise such a technology platform.

11:00 am–11:15 amFC2 a Monolithically Integrated Si Optical Single-Sideband Modulator, B.-M. Yu,

J.-M. Lee, Yonsei University, Seoul, Korea, C. Mai, S. Lischke, L. Zimmermann, IHP,Frankfurt (Oder), Germany, and W.-Y. Choi, Yonsei University, Seoul, Korea

We demonstrate a monolithically integrated Si optical single-sideband modulator that contains aring-assisted Mach-Zehnder modulator, two MMI optical couplers, and an electrical quadraturehybrid coupler. The modulator successfully produces 30-GHz single sideband with 15 dBsuppression of the undesired sideband.

11:15 am–11:30 amFC3 Integrated all-Optical Phase-Sensitive amplifier Using the Thermal Nonlinearity,

T. Van Vaerenbergh, G. J. Mendoza, D. Kielpinski, J. S. Pelc, N. Tezak, R. Bose, C. Santori, and R. G. Beausoleil, Hewlett Packard Labs, Palo Alto, CA, USA

We demonstrate an all-optical phase-sensitive amplifier, a critical component in integrated circuitsfor all-optical computing. The amplifier is fabricated in amorphous silicon-on-insulator and relies onthermo-optic self-heating in a ring-loaded Mach-Zehnder interferometer. changing the power andphase of the bias input tunes the gain.

11:30 am–12:00 pm (Invited)

FC4 Laser Integration on Silicon, P. Doussiere, Intel Corporation, Santa Clara, CA, USA

In this presentation we will review the progress of silicon III-V semiconductor hybrid near-infraredlasers and show that they can meet the performance and reliability required for commercial datacomtransceivers at 100 Gbit/s and beyond.


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1:30 pm–3:15 pm Grand Ballroom aSession FD Si/III-V LasersSession Chair Heisheng Rong, INTEL

1:30 pm–1:45 pmFD1 Integration of III-V Light Sources on a Silicon Photonics Circuit by Transfer

Printing, J. Juvert, Ghent University, Ghent, Belgium, T. Cassese, Scuola SuperioreSant’Anna, Pisa, Italy, S. Uvin, A. De Groote, Ghent University, Ghent, Belgium, B. Snyder, P. De Heyn, P. Verheyen, IMEC, Leuven, Belgium, A. J. Trindade, C. Bower, X-Celeprint Limited, Cork, Ireland, M. Romagnoli, Consorzio Nazionale Interuniversitarioper le Telecomunicazioni (CNIT), Pisa, Italy, G. Roelkens, and D. Van Thourhout, Ghent University, Ghent, Belgium

We report on the integration by transfer printing of III-V Fabry-Pérot cavities on a silicon photoniccircuit. We pre-process the III-V coupons on their native substrate, transfer print onto the target SOI,and post-process the printed coupons. We report light coupling into the photonic circuit.


FD2 III-V Quantum Dot Lasers Grown on Si Emitting at 1.5 um, K. Lau, Hong KongUniversity of Science and Technology

Directly grown high performance InAs/GaAs QD lasers on silicon substrates emitting at 1.3 umhave been reported. We demonstrate by MOCVD the first room-temperature InAs/InAlGaAsquantum-dot microdisk lasers epitaxially grown on on-axis (001) Si, with a lasing wavelength of1.56 um and low pump power.

2:15 pm–2:30 pmFD3 Monolithic Integration of Inalas/InGaas Quantum-Well on InP-OI Micro-

Substrates on Si for Infrared Light Sources, Y. Baumgartner, B. Mayer, M. Sousa, D. Caimi, K. Moselund, and L. Czornomaz, IBM Research GmbH, Rüschlikon,Switzerland

We demonstrate for the first time that InAlAs/InGaAs QW can be selectively grown on micron-sizedInP-OI substrates, obtained by selective epitaxy in empty oxide cavities on Si. The concept, materialand optical characterizations are presented, paving the way towards integrated light sources forinfrared applications.

2:30 pm–2:45 pmFD4 Epitaxy of Direct Bandgap Group IV Heterostructure Lasers, N. von den Driesch,

D. Stange, D. Rainko, Forschungszentrum Jülich GmbH, Jülich, Germany, P. Zaumseil, G. Capellini, IHP, Frankfurt (Oder), Germany, J.-M. Hartmann, Univ. Grenoble Alpes,Grenoble, France, T. Schroeder, IHP, Frankfurt (Oder), Germany, S. Mantl, D. Grützmacher, and D. Buca, Forschungszentrum Jülich GmbH, Jülich, Germany

We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructuresand multi quantum wells. While both designs offer high structural quality and strong light emission,multi quantum wells benefit from a smaller number of defects at the active region.

35


FD5 Direct Growth of III-V Quantum-Dot Lasers on Silicon, H. Liu, University CollegeLondon, London, United Kingdom

Direct growth of III-V lasers on Si is the most promising solution to overcome the lack of efficientlight sources on Si platform. We demonstrated the first practical silicon-based telecommunicationswavelength III-V lasers with low threshold current density, high output power, and long lifetime.


3:45 pm–5:00 pm Grand Ballroom aSession FE Optoelectronic DevicesSession Chair Kartik Srinivasan, National Institute of Standards and Technology (NIST)


FE1 Black Phosphorus Infrared Optoelectronics, M. Li, University of Minnesota

4:15 pm–4:30 pmFE2 Design and Performance of High-Speed Ge-on-Si Waveguide Photodiodes, N. K. Hon,

S. Sahni, A. Mekis, and G. Masini, Luxtera, Inc., Carlsbad, CA, USA

Three Ge-on-Si photodetector architectures with different contacting schemes are compared, withemphasis on their bandwidth. The study shows that bandwidth >50 GHz and responsivity >1 A/W at1490 nm can be achieved using a commercial silicon photonics process.

4:30 pm–4:45 pmFE3 Operation and analysis of Low-Voltage Three-Terminal avalanche Photodiodes,

Z. Huang, X. Zeng, D. Liang, M. Fiorentino, and R. G. Beausoleil, Hewlett Packard Labs,Palo Alto, CA, USA

We demonstrate a three-terminal waveguide avalanche photodiode detector (3TAPD) with –6Vbreakdown voltage, 18.6GHz 3dB bandwidth. Design, simulation of the device is discussed.

4:45 pm–5:00 pmFE4 Electrically Tunable absorption in Graphene-Integrated Silicon Photonic Crystal

Cavity, L. Abdollahi Shiramin, W. Xie, Gent University-IMEC, Ghent, Belgium, B. Snyder, P. De Heyn, P. Verheyen, IMEC, Leuven, Belgium, G. Roelkens, and D. VanThourhout, Gent University-IMEC, Ghent, Belgium

We demonstrate 17 dB extinction ratio in an electrically gated graphene-integrated silicon photoniccrystal cavity by applying –1.2 V gate voltage. The shift of resonance wavelength for the samevoltage range is 0.75 nm. The size of the graphene layer is only 5 µm2.

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5:00 pm–5:30 pmBest Paper / Student Paper / Poster awards

END OF PROGRaM

37

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38

Abdollahi Shiramin, L. ..................................FE4Accard, A. ....................................................ThP2Adelmini, L. ................................................ThP4Ahn, J. T.......................................................ThP4Alattili, A.....................................................ThA4Alonso-Ramos, C. ..............WD5, WP10, WP11,..................................ThB2, ThB3, ThD2, ThP11Arai, S. ........................................................WD1Armand Pilon, F. ....................WC2, WC3, WC4Artundo, I. ..................................................ThA1Atsumi, Y. ....................................................ThB5Aubin, J. ......................................................WC2Augul, L.........................................................FB3Badihi, A. ....................................................ThC3Baets, R. ......................................................ThA2Baldassarre, L. ......................WB1, WB4, WP14Balestrieri, M. ............................................WP10Ballabio, A. ..................WB1, WB2, WB4, ThD3Banakar, M. ......................................WB3, ThA4Baudot, C. ..................................................ThP11Baumgartner, Y. ............................................FD3Beausoleil, R. ............................................ThP23Beausoleil, R. G. ..................................FC3, FE3Bechler, S.......................................................FB3Benedikovic, D. ....................WP11, ThB2, ThB3Berciano, M. ....................................WP11, ThB2Bernabe, S. ................................................ThP24Bernard, M. ................................................WP12Bernier, E...........................................WP5, ThB6Berroth, M. ................................................ThP14Bertrand, M. ................................................WC2Betthenhausen, M. ......................................WP20Biagioni, P. ............................WB1, WB4, WP14Biccari, F.....................................................WP10Bienstman, P. ..............................................ThA2Blampey, B.................................................ThP24Boeuf, F. ....................................................ThP11Bogaerts, W. ................................................WD3Bonzon, C. ..................................................WC4Bose, R. ........................................................FC3Bower, C. ......................................................FD1Bramerie, L. ................................................ThC4Brimont, A. ................................................ThP19Brulis, V. ....................................................ThP16Buca, D. ....................................WC3, WC5, FD4Bucio, T. D. ................................................ThA4Caimi, D. ......................................................FD3

Calandrini, E. ..............................................WB1Calvo, V. ............................................WC2, WC4Cao, W. ........................................................WB3Capellini, G. ..............................WC3, WP4, FD4Carrara, D. ..................................................ThC2Caselli, N. ..................................................WP10Cassan, E. ............................WD5, WP10, WP11,..................................ThB2, ThB3, ThD2, ThD3

Cassese, T. ....................................................FD1Ceballos, A. C. ..........................................ThA5Celo, D...............................................WP5, ThB6Cernansky, R.................................................WP6Chaibi, M. E. ..............................................ThC4Chang, P.-H. ..............................................ThP23Cheben, P. ........................................ThA4, ThB3Chee, A. K. L. ............................................ThD1Chelnokov, A. ....................................WC2, WC4Chen, X.........................................................WP2Chen, Y. ......................................................ThA4Cheng, Z. ....................................................ThB4Cherchi, M. ................................................ThP15Chiba, Y. ......................................................ThP7Choi, W.-Y. ....................................................FC2Chong, H. M. H. ..........................................WP6Christopoulos, T.........................................ThP18Chu, T. ..........................................................WE1Chung, Y.-C. ..............................................ThP22Clausen, C. ..................................................WC1Cong, G. ............................................WD1, WE2Crémer, S. ..................................................ThP11Cristofori, V. ................................................ThC4Crozat, P. ....................................................WP11Czornomaz, L. ..............................................FD3D’Mello, Y. ..................................................ThP9Da Ros, F. ....................................................ThC4Damas, P. ....................................................WP11Davanco, M. ................................................ThB1De Groote, A. ................................................FD1De Heyn, P. ..........................................FD1, FE4Debnath, K. ......................................WP1, ThA4Deng, Q. ....................................................ThP20Deng, S. ....................................................ThP12Dhakal, A. ..................................................ThA2Ding, J. ..............................................ThP1, ThP5Ding, Y.............................................WP18, ThC4Doussiere, P. ..................................................FC4Dow, L. ..............................................WD4, WE3

AUTHOR INDEX

39

Duan, G.-H.............................ThC2, ThC4, ThP2Dubray, O...................................................ThP24Dubreuil, N. ....................................ThD2, ThD3Dumais, P...........................................WP5, ThB6Dumas, D. C. S. ..........................................WP7Durán-Valdeiglesias, E. ..................WP10, ThB3Eason, C. ....................................................ThC2Eich, M. ........................................ThP10, ThP15El-Fiky, E. ....................................................ThP9Ellerbee Bowden, A. K. ..............................ThA5Faist, J. ........................................................WC4Fedeli, J.-M. ................................................ThA1Félix Rosa, M.............................................ThP14Ferrotti, T. ..................................................ThP24Figliolia, I. ..................................................WP14Filoramo, A.................................................WP10Fiorentino, M. ..................................ThP23, FE3Fischer, I. A. ........................................WC1, FB3Flesch, J. ....................................................WP20Fohrmann, L. S. ........................................ThP10Fournier, M. ..............................................ThP24Fowler, D.........................................ThP4, ThP24Franz, Y.........................................................WP2Frigerio, J. ........WB1, WB2, WB4, WP14, ThD3Fujikata, J.....................................................WD2Galili, M. ....................................................WP18Gallacher, K. ................WB1, WB4, WP7, WP14Gallet, A.................................ThC2, ThC4, ThP2Gao, J. ..........................................................ThP3Gao, X. ......................................................WP16Gardes, F. Y. ......................................WB3, ThA4Gassenq, A. ........................................WC2, WC4Geiregat, P. ..................................................WP9Geuzebroek, D.............................................ThA3Ghorbel, I. ..................................................ThC2Ghosh, S. ....................................................WP19Ghulinyan, M. ............................................WP12Giliberti, V. ............................WB1, WB4, WP14Gindre, P. ..................................................ThP24Goodwill, D. J. ..................................WP5, ThB6Grabska, K. ..................................................WB3Green, W.......................................................WA1Grellier, E. ................................................ThP24Grillot, F.......................................................ThP2Griol, A. ..........................................WP3, ThP19Grützmacher, D. ..................................WC3, FD4Guerber, S. ................................................ThP11Guha, S. ......................................................WP20Gurioli, M. ..................................................WP10Hagihara, Y. ................................................WD2

Hakemi, N. ................................................ThP15Halir, R. ......................................................ThA4Han, G. ......................................................WP16Han, J. ..........................................................WD2Hao, Y. ........................................................WP16Harjanne, M. ..............................................ThP15Hartmann, J. M. ......................WC2, WC3, WC4Hartmann, J.-M. ............................................FD4Hassan, K. ..................................................ThC4Hatori, N. ....................................................ThC5Hattasan, N...................................................WB3Haug, M. ....................................................ThP14He, J.-J. ..............................................ThA4, FB1He, W. ..........................................................ThP3Hoang, T.-H.-C. ..........................................WP10Homm, P. ......................................................WP3Hon, N. K.......................................................FE2Hoppe, N. ..................................................ThP14Horikawa, T. ....................................WD2, ThP17Hsu, S.-H. ..................................................ThP22Hu, H. ........................................................WP18Hu, J. ..........................................................ThD2Huang, H. ....................................................ThP2Huang, Z. ......................................................FE3Huet, K. ........................................................WB4Hui, A. T. L.................................................WP18Ikonic, Z. ......................................................WC5Intonti, F. ....................................................WP10Isella, G. ..........WB1, WB2, WB4, WP14, ThD3Itoh, K. ........................................................WD1Jahandar, P. ..................................................WP7Jalas, D.......................................................ThP15Jany, C. ........................................................ThC2Jeong, S.-H. ..........................ThC5, ThP8, ThP17Ji, P. ..............................................................ThP3Jia, H. ................................................ThP1, ThP6Jiang, J. ..............................................WP5, ThB6Juvert, J. ........................................................FD1Kahn, S. A. ..................................................ThA5Kallega, R. ................................................ThP13Kazmierczak, M. ........................................WP20Khokhar, A. Z. ....WB3, WP1, WP2, WP6, ThA4Kielpinski, D. ................................................FC3Kim, M.-S. ..................................................ThP4Kinoshita, K. ..................................WD2, ThP17Kippenberg, T. ..............................................FA1Kita, T. ........................................................ThP7Klein, E. ......................................................ThA3Klesse, W. M. ..............................................WP4Knights, A. P. ....................................WD4, WE3

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Knoll, D. ....................................................WP13Koerner, R. ..................................................WC1Kopp, C.............................................ThC2, ThP4Körner, R. ......................................................FB3Krauss, T. F. ..............................................ThP10Kreissl, J. ......................................................WP4Kriezis, E. E. ..............................................ThP18Kroh, M. ....................................................WP13Kudrawiec, R. ..............................................WP8Kumar, A. ....................................................ThP9Kurata, K. ..............................WD2, ThC1, ThC5Kurihara, M. ................................................WD2La China, F. ................................................WP10Labonté, L. ..................................................WD5Lacava, C.....................................................ThA4Lagae, L.......................................................ThA1Lau, K. M. ....................................................FD2Lawniczuk, K. ............................................ThA3Le Roux, X. ..............WB2, WD5, WP10, WP11,......................ThB2, ThB3, ThD2, ThD3, ThP11

Lee, J.-M. ............................................ThP4, FC2Lee, M.-J. ..................................................ThP23Lemonnier, O. ............................................ThP24Levaufre, G. ................................................ThC2Li, A. ............................................................WD3Li, C. ..........................................................ThP23Li, M. ............................................................FE1Li, R. ............................................................ThP9Li, T. ............................................................WB3Liang, D. ........................................................FE3Licitra, C. ....................................................WC2Lin, H. ........................................................ThD2Lipka, T.......................................................WP15Lischke, S. ..............................WP4, WP13, FC2Littlejohns, C. G...............................WB3, WP17Liu, C. ........................................................WP17Liu, G. N. ..................................................ThP12Liu, H. ..........................................................FD5Liu, L.............................................ThP12, ThP20Liu, Q. ..........................................................WB2Liu, W. ..........................................................WP5Liu, Y. ................................................WP16, FB2Locquet, J.-P. ................................................WP3Loo, R. ..........................................................WP9Maegami, Y. ......................................WD1, WE2Mai, A. ..........................................................WP4Mai, C. ................................................WP3, FC2Mailis, S. ......................................................WP2Make, D. ..........................................ThC2, ThP2Malhouitre, S. ..............................................ThC2

Mancinelli, M. ............................................WP12Mantl, S. ........................................................FD4Marcaud, G. ....................................WP11, ThB2Marin, E. ......................................................WC4Marris-Morini, D. ....WB2, WD5, WP10, WP11,..................................ThB2, ThB3, ThD3, ThP11Martens, D...................................................ThA2Marti, J. ......................................................ThP19Martinez, E...................................................WC2Marzban, B. ......................................WC3, WC5Mashanovich, G. Z. ................WB3, WP6, WP17Masini, G. ......................................................FE2Mastronardi, L. ............................................WB3Mayer, B. ......................................................FD3Mazeas, F. ....................................................WD5Mazzamuto, F...............................................WB4Mekis, A.........................................................FE2Mendoza, G. J. ..............................................FC3Menghini, M. ................................................WP3Mentovich, E. ..............................................ThC3Mere, V.......................................................ThP13Merget, F. ........................................WC5, ThC3Milazzo, R. ..................................................WB4Millar, R. W. ..........................WB1, WP7, WP14Milord, L. ....................................................WC2Milosevic, M. M. ..........................................WP2Mitzloff, J. ..................................................WP20Mizutani, K. ................................................ThC5Mogami, T. ......................................WD2, ThP17Molina-Fernández, I. ..................................ThA4Moscoso-Mártir, A. ....................................ThC3Moselund, K. ................................................FD3Myronov, M. ................................................WP7Nakamura, T.................................................WD2Napolitani, E. ..............................................WB4Nedeljkovic, M.................................WB3, WP17Ng, D. K. T. ................................................ThD1Nicoletti, S. ................................................ThA1Nie, X. ........................................................ThA2Nielsen, M. ..................................................ThC3Nien, L. W. ..................................................WP4Nishiyama, N. ..............................................WD1Nojic, J. ......................................................ThC3O’Brien, P.........................................ThA1, ThC2Oehme, M. ..................................................WC1Ohno, M.............................................WD1, WE2Okano, M. ..........................................WD1, WE2Olivier, S. ..............................ThC2, ThC4, ThP2Omoda, E.....................................................ThB5Oo, S. Z. ......................................................WP6

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Ooi, K. J. A. ................................................ThD1Ortega-Moñuz, A. ......................................ThA4Ortolani, M. ..........................WB1, WB4, WP14Oser, D. ............................................WD5, ThB3Oton, C. J. A. ..............................................ThP4Oxenløwe, L. K. ..........................................ThC4Paez, D. ........................................................WD4Paez, D. J. ....................................................WE3Palermo, S. ................................................ThP23Pan, C. ........................................................WP19Pandey, A. ..................................................ThP21Pantouvaki, M. ............................................WP9Patel, D. ......................................................ThP9Pauc, N...............................................WC2, WC4Paul, D. J. ....................WB1, WB4, WP7, WP14Pavesi, L. ....................................................WP12Peacock, A. C. ..............................................WP2Peczek, A. ..................................................WP13Pelc, J. S. ......................................................FC3Pellegrini, G.......................................WB1, WB4Pérez-Galacho, D. ................WD5, ThB3, ThP11Petermann, K. ............................................ThP16Petra, R. ........................................................WP6Petropoulos, P. ............................................ThA4Petrov, A. Y. ..................................ThP10, ThP15Peucheret, C. ..............................................ThC4Piehler, J. ....................................................WP20Pitruzzello, G. ............................................ThP10Plant, D. V. ..................................................ThP9Polak, M. P. ..................................................WP8Polder, T. ....................................................ThP14Politi, A.........................................................WP6Ponce, R. ......................................................WC5Porret, C. ......................................................WP9Pucker, G. ..................................................WP12Qiu, H. ........................................................WP17Qu, Z. ..........................................................WB3Rahman, B. M. A. ......................................WP19Rainko, D. ..........................................WC3, FD4Ramirez, J. M. ..................................WB2, ThD3Rasmussen, D. E. ........................................ThC3Rathgeber, L...............................................ThP14Reboud, V. ............................WC2, WC4, ThP24Reed, G. T...........WB3, WP1, WP2, WP6, WP17Reynolds, S...................................................WP6Reynolds, S. A. ............................................WB3Rhim, J. ......................................................ThP23Richardson, K. ............................................ThD2Rockman, S. ................................................ThC3Roelkens, G. ..............................ThA2, FD1, FE4

Romagnoli, M. ..............................................FD1Romero-García, S. ......................................ThC3Rosa, A.............................................WP3, ThP19Rothman, J. ..................................................WC2Rouchon, D. ................................................WC2Rouifed, M.-S. ............................................WP17Runge, A. F. J. ..............................................WP2Ryckeboer, E. ..............................................ThA2Saber, M. G. ................................................ThP9Sahni, S. ........................................................FE2Saito, S. ............................................WP1, ThA4Sakakibara, Y. ..............................................ThB5Sakat, E. ......................................................WB1Sanchez, L. ..................................................WP3Sanchis, P. ........................................WP3, ThP19Sandomirsky, A. ..........................................ThC3Santori, C. ....................................................FC3Sarti, F.........................................................WP10Schäffner, J. ..................................................WP4Scharoch, P. ..................................................WP8Scheck, P. ..................................................ThP14Schires, K.....................................................ThP2Schmid, J. H. ..............................................ThA4Schroeder, T...................WC3, WP4, WP20, FD4Schulze, J. ..........................................WC1, FB3Selvaraja, S. K...............................ThP13, ThP21Serna, S. ..........................................WP10, ThD2Serna, S. F. ..................................................ThD3Setter, R. ......................................................ThC3Shao, S. ........................................................ThP5Sharif Azadeh, S. ..............................WC5, ThC3Shen, A. ............................................ThC2, ThC4Shen, B. ......................................................ThC3Shiina, A. ..................................................ThP17Shimura, D. ................................................ThP17Shimura, Y. ..................................................WP9Sigg, H.....................................WC2, WC3, WC4Signorini, S. ................................................WP12Sinatkas, G. ................................................ThP18Skandalos, I. ..............................................ThP18Skibitzki, O.................................................WP20Snyder, B. ............................................FD1, FE4Sobu, Y. ..........................................ThP8, ThP17Soler Penades, J. ..............................WB3, WP17Solgaard, O. ................................................ThA5Sommer, G. ................................................ThP10Song, M. ......................................................ThP2Sorgi, A.......................................................WP14Sousa, M. ......................................................FD3Srinivasan, K. ..............................................ThB1

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Srinivasan, S. A. ..........................................WP9Stange, D. ................................WC3, WC5, FD4Stankovic, S. ..............................................ThA4Stanković, S. ................................................WB3Sun, X. ........................................................ThB4Sun, Y. ................................................ThP3, FB2Szelag, B. ..................................................ThP24Takahashi, S. ................................................WD2Takenaka, M.................................................WD2Tan, D. T. H. ................................................ThD1Tanaka, Y...........................................ThC5, ThP8Tanzilli, S. ....................................................WD5Tarazona, A...................................................WP6Tardif, S. ......................................................WC4Testa, F. ........................................................ThP4Tezak, N.........................................................FC3Thai, Q. M. ..................................................WC2Thompson, M. G. ..........................................FC1Thomson, D. J. ............WB3, WP2, WP6, WP17Thonnart, Y. ..............................................ThP24Tillack, B. ....................................................WP4Tina, G. X. ..................................................WP17Tokushima, M. ..........................................ThP17Trieu, H. K. ................................................WP15Trindade, A. J. ..............................................FD1Tsang, H. K. ................................................ThB4Ushida, J. ..................................................ThP17Uvin, S...........................................................FD1Vakarin, V. ..................WB2, ThB2, ThB3, ThD3Van Bilzen, B. ..............................................WP3Van Campenhout, J. ......................................WP9van Rees, A. ................................................ThA3Van Thourhout, D. ......................WP9, FD1, FE4Van Vaerenbergh, T. ......................................FC3Verheyen, P. ..........................................FD1, FE4Virgilio, M. ..................................................WP4Vivien, L. ................WB2, WD5, WP10, WP11,......................ThB2, ThB3, ThD2, ThD3, ThP11

Vogel, W.....................................................ThP14Voigt, K. ..........................................WP4, ThP16von den Driesch, N. ............................WC3, FD4Vulliet, N. ..................................................ThP11Wang, H. ....................................................WP17Wang, J.......................................................ThP12Wang, T...........................................ThD1, ThP12Wang, Y. ..........................................WP16, ThP9Wang, Z. ............................................WD4, WE3Wangüemert-Pérez, J. G. ............................ThA4Wei, W. ......................................................ThP12Wen, Y. ......................................................ThP12

Widiez, J.......................................................WC4Widmann, D...............................................ThP14Witzens, J. ..............................WC3, WC5, ThC3Witzigmann, B. ..........................................WP20Wolansky, D. ....................................WP4, WP13Wong, C. Y. ................................................ThP12Wu, H.................................................WB3, ThP3Wu, X. ........................................................ThB4Xia, Y. ..........................................................ThP6Xie, W. ..........................................................FE4Xing, Z. ........................................................ThP9Xu, L. ..........................................................ThP9Xu, W. ..........................................................ThP3Yadav, A. ....................................................ThD2Yamada, H. ..................................................ThP7Yamada, K. ........................................WD1, WE2Yamamoto, Y. ..............................................WP4Yang, L. ..................................ThP1, ThP5, ThP6Yang, Y.-C. ................................................ThP22Yashiki, K. ..................................................WD2Yoshida, T. ..................................................ThB5You, C. ........................................................WP20You, C. ........................................................WP20Yu, B.-M. ......................................................FC2Yu, K. ........................................................ThP23Zabel, T. ..................................WC2, WC3, WC4Zanzi, A. ....................................................ThP19Zaumseil, P. ..................................................FD4Zeng, X. ........................................................FE3Zhang, C. ......................................................WP5Zhang, J. ....................................................WP16Zhang, L. ..........................................ThP1, ThP5Zhang, S. ....................................................WP16Zhang, W. ........................................WD5, WP10Zhang, Z. ....................................................WP17Zheng, B. ....................................................ThB4Zheng, L.......................................................ThP5Zhou, E. ....................................................ThP12Zhou, T. ............................................ThP1, ThP6Zhou, W. ............................................ThB4, FB2Zhou, Z. ..........................................WB3, ThP20Zimmermann, L. ....................WP3, WP4, WP13,..........................................................ThP16, FC2

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Herzlich Willkommen to the 14th International Conference on Group … · 2017-11-27 · Herzlich...

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