Plasma Prozess-Technologie bei SENTECH · PDF filePlasma Prozess-Technologie bei SENTECH...

14.05.2013 www.sentech.de 1

Plasma Prozess-Technologie bei

SENTECH Instruments

- ICP- und RIE-Ätzen,

ICPECVD sowie PEALD

Michael Arens

Plasma Germany Frühjahrssitzung 2013 Berlin 14.5.2013


Outline

Einführung

Ätzsysteme und Anwendungen

ICPECVD und PECVD

PEALD Systeme und Anwendungen


The Company

Private company founded in 1990

New building since 2010

ISO 9001 certificated

60 employees (30% R&D)

Business fields:

Thin Film Metrology &

Plasma Process Technology

More than 1,500 metrology tools

and 300 plasma tools in the field

SENTECH‘s strengths:

Application support

Broad range of products

High quality of products

Service

Turn over 2012: 10 Mio Euro


Plasma Process Technology

• RIE, ICP-RIE

• PECVD, ICPECVD

• ALD / PEALD

• Cluster tools

• SENTECH laser end point monitor


Etch technology and applications


RIE- and ICP-RIE plasma etcher

RIE chamber

ICP chamber

RF Bias-Power

surface damages possible due

to the ion bombardment

increased etch rate

low damage processes

chuck bias Ei

Low density plasma

VRF

RF-Matchbox CCP-Electrode

Inductive Coupled Power

High density plasma

RF ICP-Power

RF-Matchbox

ICP-Matchbox PTSA 200

CCP-Electrode with

He-backside cooling

ICP-power controls high ion density ni

Bias-power controls low ion energy Ei

pressure p=0.1 …10 Pa

plasma density ne ~1011 ..1012 ions/cm-3

VRF controls of high ion energy Ei and

low ion density ni

pressure p= 1…100 Pa

plasma density ne=109 …1010ions/cm-3


RIE Plasma Etcher System

• III-V etching

• dielectrics (SiO2, SiN)

• metal etching

• silicon etching

• resist etching

broad application range

Al-etch Silicon etch

GaAs VCSEL

Etchlab 200 SI 591


Inductively coupled plasma source Planar triple spiral antenna PTSA 200

High plasma density

Low ion energy

Low pressure operation

13.56 MHz

Al2O3 dielectric window

Integrated automatic matchbox

Pressure Range 0.1 ... 20 Pa Power range 100W...1200W Plasma Density up to 1012 cm-3 Min. Ion Energy 10 eV

14.05.2013 8

low damage, high rate processes

low temperature processes

-100 -50 0 50 100

1010

1011

1012

0,1 Pa

0,5 Pa

1 Pa

3 Paele

ktr

on

de

ns

ity

Ne (

cm

-3)

Position x (mm)

500 W, Ar

Ion energy distribution

low damage

PTSA 200 ICP

homogeneity (Ar-Plasma)



SI 500 - system layout

load-lock

ICP source with PTSA Planar Triple Spiral Antenna with central window

high throughput vacuum system

electrode with He-BS-cooling & excellent temperature control

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SI 500 ICP-RIE-System – a flexible solution for the etch of different materials

continuous Process

(different gas mixtures) at low temperatures

(Cryo-etching)

fast gas replacement

(gas chopping)

Silicon fine Etching

with ICP

Silicon Deep Reactive Ion Etching (DRIE)

with ICP

III-V-Semiconductors

II-VI-

Semiconductors

Ash/Clean-

Processes

Insulating-/Glass-Substrates

Metal- Etching

Sputtering

Dielectric - Layers


ICP etcher SI 500: Nanostructures photonic crystal in InP 130 nm, aspect ratio ca. 20:1

quantum dot in GaAs (NEST Pisa) 200 - 400 nm 20 nm SiGe quantum wire

(Ruhr-Uni Bochum)

PhC in SiO2 and Si3N4 (FSU Jena) 370 nm,


deep etch in GaAs, SiC and silica

Cl2, BCl3

> 4 µm/min

SiC

SF6/O2

rate up to 1.7 µm/min

GaAs

Courtesy by CHF3/SF6

100 µm deep, Ni mask

Quartz


Etching of Silicon with vertical sidewalls based on fluorine chemistry Continuous process Cryogenic etching 3-step gas chopping

process (Bosch)

used for

nanostructures

smooth sidewalls

very precise profile

control by adding C4F8

lower etch rate

deep etching in Si

scallops

profile control by

depostition-/etch-

steps

high etch rate

deep etching in Si

smooth sidewalls

profile control by

temperature or O2

high etch rate

Silicon Deep Reactive Ion Etching (DRIE) with ICP Silicon fine Etching (ICP)

„scalloping“

„scalloping“

period: 3310nm

wavelength: 850nm

measured efficiency: >80%

wave front error (rms) < 5nm

(</100)

back side reflectivity <0.3%

Etching of microoptics

results for the Gaia grating

500nm period, 1200nm depth

pattern geometry optical equivalent

INSTITUTE of APPLIED PHYSICS Friedrich-Schiller University Jena



PECVD and ICPECVD

Systems and Applications

PECVD with loadlock

optional with frequency mixing

Optical process monitoring

(OES, Interferometer, LE)

Deposition of

SiO2, SiNx, SiOxNy, TEOS, a-Si:H, DLC

PECVD: Depolab 200 SI 500 PPD

Wafer direct loading

2“-8“ Wafer

Modular design for flexible

upgradeability with larger pumping

unit, low frequency power supply,

and additional gas lines…


www.sentech.com

ICPECVD: SI 500 D

Low stress, low temperature and low

damage plasma enhanced chemical

vapor deposition (PECVD)

SI 500 D:

planar ICP plasma source,

He backside cooling

Optical process monitoring

(LE, Interferometer, OES)

Plasma deposition of

SiO2, SiNx, SiOxNy, TEOS, a-Si:H



Si3N4 Deposition with PECVD and ICPECVD

PECVD ICPECVD

Temperatur 350°C 100°C

BOE–etchrate 35 nm/min < 10 nm/min

Stress controllable by additional LF coupling

controllable by process parameter

Homogenity of the film thickness: d= 258.5 ± 3%

1.96 1.97 1.98 1.99 2.00 2.01 2.02 2.03 2.04 2.05

-1000

-800

-600

-400

-200

0

200

stress (350W 10Pa)

Stress (350W 13Pa)

Stress(150W,13Pa)

ten

sile

co

mp

ressiv

e

n (=633 nm)

Str

ess(

MP

a)

Stress Control in ICPECVD

without Bias

p

T = 130 °C


Si3N4


Applications of low T ICPECVD films

Low temperature SiNx

ICPECVD film for lift-off process

400nm thick SiNx films deposited on PET.

The bow demonstrates the different stress value of the SiNx layers.


ALD & PEALD @

SENTECH Instruments GmbH


ALD: Atomic Layer Deposition

- 1974: Finish patent (Dr. Tuomo Suntolo)

improve the quality of ZnS films in electroluminescent displays (TFEL)

- ALD is a special CVD process

sequential use of precursor materials

- Deposition of ultrathin films

oxides, nitrides, sulfides, metals …

- 2 different types of ALD

thermal and plasma enhanced

Example: thermal deposition of Al2O3 with

trimethyl aluminum (TMA) and water vapor (H2O)


Atomic Layer Deposition ALD and PEALD

Deposition of ultra-thin films of few nanometers with excellent uniformity and very good conformality to 3D surfaces in semiconductor engineering, MEMS and other nanotechnology applications

SI ALD: ALD system for small scale production SI ALD LL: ALD system with loadlock chamber

Upgradable with capacitive coupled plasma (CCP) source for Plasma Enhanced ALD (PEALD)


Reactor chamber and plasma source

- Reactor chamber Temperature: up to 150 °C

Showerhead mode

- Precursor line Temperature: up to 200 °C

3-Port ALD-valve

Stop valve

- Plasma source True remote CCP-source

isolation valve

Plasma source can be separated from the

system


PEALD on 8" Wafer

Al2O3: TMA + O2-Plasma (SENTECH Ellipsometer: SE 800)

AlN: TMA + NH3-Plasma (SENTECH Ellipsometer: SE 800)

Layer thickness: 8” wafer (nm) 40,8 (± 1,96%)

Growth rate (Å/cycle) 0,9

Substrate temperature (°C) 250

n (@632,8 nm) 1,933 (± 0,91%)

Layer thickness: 8” wafer (nm) 26,8 (± 1,6%)

Growth rate (Å/cycle) 1,2

Substrate temperature (°C) 200

n (@632,8 nm) 1,642 (± 0,58%)


Multilayer Al2O3 / SiO2

Al2O3-Process

SiO2-Process

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 150

5

10

15

20

25

30

Dru

ck [P

a]

Zeit [h]

- thermal ALD Al2O3 and PEALD SiO2 alternately

- in total 53 layers : 26 Al2O3-layers and 24 SiO2-layers (~ 1 µm)

- deposition time: ~ 14 h

Layer thickness (SENTECH Reflectometer: RM 2000)

Excellent homogeneity (± 0,6 %, 4″-Wafer)

Very good agreement with expected film thickness


Conformality

18 nm ALD-Al2O3 21 nm PEALD-Al2O3

Excellent conformality using ALD as well as PEALD

Dank an das IPHT Jena für die REM-Aufnahmen


Plasma Process Monitoring

Laser ellipsometry, interferometry and optical emission spectroscopy are offered for in-situ monitoring of film growth and erosion, etch depth measurement and endpoint detection.


SLI 670 – Laser-Interferometer

• Light source laser diode (λ~670 nm)

• Working distance 150 mm … 500 mm

• Spot size 100 µm (at 150 mm distance)

• Measurement speed 15 ms … 1000 ms (adjustable)

• Translation stage 25 mm x 25 mm (with 2 µm step)

• Field of view 1.5 mm x 1.5 mm (at 150 mm distance)


silicon

polymer

ICP power

intensity

modulation

polymer etching end of polymer film

silicon silicon

polymer

nv

np

ns

nv

np

ns

nv

ns

laser

light

modulation

stops

www.sentech.de 34

Plasma Cluster Configurations

Etching (ICP, RIE) and deposition modules (PECVD, ALD), cassette stations, and productive robots can be combined to cluster systems for R&D and production to meet the requirements of closed processing and high throughput.

• Fully automated ICP and RIE etchers for compound semiconductor processing

• Large area substrate processing for masks and micro-optics

• High throughput chromium etch cluster

Vielen Dank für Ihre Aufmerksamkeit.

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