SiC MOSFET Module FCA150AC120SiC MOSFET Module FCA150AC120 FCA150AC120 • 2in1 SiC MOSFET module...

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SiC MOSFET Module FCA150AC120 FCA150AC120 • 2in1 SiC MOSFET module • Isolated module • Integrated FWD function Features• Small size package • High reliability • Safe gate driving • Short circuit tolerance • Low power loss • Low temperature dependency of RDS(on) • Unnecessity of additional FWD Applications• Industrial inverters / DC-DC converters / EV chargers / Resonant power supply Maximum Ratings (Tj=25℃ unless otherwise specified) Symbol Unit V DSS V V V I D A V GS =20V, Tc=90℃ I S A V GS =-5V, Tc=90℃ P tot W T C =25℃ T j T stg V iso V AC 60Hz 1minute Mounting M5 Recommended Value 1.5 to 2.5 Terminal M5 Recommended Value 1.5 to 2.5 - g 130 Typical value Electrical Characteristics (Tj=25℃ unless otherwise specified) Min. Typ. Max. V (BR)DSS V 1200 0.61 1.40 0.67 1.50 4.1 9.3 4.5 10.0 I DSS μA 300 V GS(th) V 3 4 5 I GSS nA 300 t d(on) ns 66 t r ns 36 t d(off) ns 114 t f ns 50 Input Capacitance C iss nF 25.3 C oss nF 7.4 Reverse Transfer Capacitance C rss nF 1.1 2.68 2.90 2.63 2.95 Q c nC 4000 Mounting torque 2.7 2.7 Mass N・m Diode Total Capacitive Charge I SD =150A, V DS =600V, di SD /dt=3200A/μs, V GS =-5V V DS =20V, V GS =0V, f=100kHz Output Capacitance Source-Drain Voltage V SD V V GS =-5V, I S =150A V GS =-5V, I S =150A, T j =150℃ V DS =10V, I D =4.5mA Gate-Source Leakage Current V GS =20V, V DS =0V Switching Characteristics I D =150A, V DS =600V, V GS =+20V/-5V, R G =2.2Ω, L=126μH Ratings Conditions Drain Cutoff Current V DS =1200V, V GS =0V Drain-Source Breakdown Voltage V GS =0V, I D =300μA Static Drain-Source On-State Voltage V DS(on) V V GS =20V, I D =150A V GS =20V, I D =150A, T j =150℃ On-State Resistance R DS(on) V GS =20V, I D =150A V GS =20V, I D =150A,T j =150℃ Item Symbol Unit Gate-Source Threshold Voltage Storage Temperature Isolation Voltage (RMS) -40 to +125 2500 Total Power Dissipation Operating Junction Temperature 1135 -40 to +150 Continuous Drain Current Continuous Source Current 150 150 Item Drain-Source Voltage Ratings 1200 Conditions Gate-Source Voltage(+) V GSS Gate-Source Voltage(-) 22 -7 Unitmm

Transcript of SiC MOSFET Module FCA150AC120SiC MOSFET Module FCA150AC120 FCA150AC120 • 2in1 SiC MOSFET module...

Page 1: SiC MOSFET Module FCA150AC120SiC MOSFET Module FCA150AC120 FCA150AC120 • 2in1 SiC MOSFET module • Isolated module • Integrated FWD function 《Features》 • Small size package

SiC MOSFET Module

FCA150AC120FCA150AC120 • 2in1 SiC MOSFET module• Isolated module• Integrated FWD function

《Features》• Small size package• High reliability• Safe gate driving• Short circuit tolerance• Low power loss• Low temperature dependency of RDS(on)• Unnecessity of additional FWD

《Applications》• Industrial inverters / DC-DC converters /

EV chargers / Resonant power supply

■ Maximum Ratings (Tj=25℃ unless otherwise specified)

Symbol Unit

VDSS V

V

V

ID A VGS=20V, Tc=90℃

IS A VGS=-5V, Tc=90℃

Ptot W TC=25℃

Tj ℃

Tstg ℃

Viso V AC 60Hz 1minute

Mounting M5 Recommended Value 1.5 to 2.5

Terminal M5 Recommended Value 1.5 to 2.5

- g 130 Typical value

■ Electrical Characteristics (Tj=25℃ unless otherwise specified)

Min. Typ. Max.

V(BR)DSS V 1200

0.61 1.40

0.67 1.50

4.1 9.3

4.5 10.0

IDSS μA 300

VGS(th) V 3 4 5

IGSS nA 300

td(on) ns 66

tr ns 36

td(off) ns 114

tf ns 50

Input Capacitance Ciss nF 25.3

Coss nF 7.4

Reverse Transfer Capacitance Crss nF 1.1

2.68 2.90

2.63 2.95

Qc nC 4000

Mounting torque2.7

2.7

Mass

N・m

Diode Total Capacitive Charge ISD=150A, VDS=600V, diSD/dt=3200A/μs, VGS=-5V

VDS=20V, VGS=0V, f=100kHz Output Capacitance

Source-Drain Voltage VSD V VGS=-5V, IS=150A

VGS=-5V, IS=150A, Tj=150℃

VDS=10V, ID=4.5mA

Gate-Source Leakage Current VGS=20V, VDS=0V

Switching Characteristics ID=150A, VDS=600V, VGS=+20V/-5V,

RG=2.2Ω, L=126μH

RatingsConditions

Drain Cutoff Current VDS=1200V, VGS=0V

Drain-Source Breakdown Voltage VGS=0V, ID=300μA

Static Drain-Source On-State Voltage VDS(on) V VGS=20V, ID=150A

VGS=20V, ID=150A, Tj=150℃

On-State Resistance RDS(on) mΩ VGS=20V, ID=150A

VGS=20V, ID=150A,Tj=150℃

Item Symbol Unit

Gate-Source Threshold Voltage

Storage Temperature

Isolation Voltage (RMS)

-40 to +125

2500

Total Power Dissipation

Operating Junction Temperature

1135

-40 to +150

Continuous Drain Current

Continuous Source Current

150

150

Item

Drain-Source Voltage

Ratings

1200

Conditions

Gate-Source Voltage(+)VGSS

Gate-Source Voltage(-)

22

-7

Unit:mm

Page 2: SiC MOSFET Module FCA150AC120SiC MOSFET Module FCA150AC120 FCA150AC120 • 2in1 SiC MOSFET module • Isolated module • Integrated FWD function 《Features》 • Small size package

FCA150AC120

■Thermal Characteristics(Tj=25℃ unless otherwise specified)

Min. Typ. Max.

Rth(j-c) ℃/W 0.11

Item Symbol UnitRatings

Junction to case (Per Leg) Thermal Resistance

Conditions

Case to Heat sink (Per Module) Thermal conductivity (Silicone grease)

= 9×10-3 [W/cm・℃]

Interface Thermal Resistance Rth(c-f) ℃/W 0.06

Page 3: SiC MOSFET Module FCA150AC120SiC MOSFET Module FCA150AC120 FCA150AC120 • 2in1 SiC MOSFET module • Isolated module • Integrated FWD function 《Features》 • Small size package

FCA150AC120

2020.11