Terahertz Transistor
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Transcript of Terahertz Transistor
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By
KAVITHA & XAVIERINA
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INTRODUCTIONINTRODUCTION
1 TERA BYTE = 1,000,000,000,000 bytes
1 TERA HERTZ= 1 TRILLION CYCLES PER
SECOND
INTELS FASTEST TRANSISTOR
TYPE OF CMOS DEVICE
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CONTINUATIONCONTINUATION
USES ONLY 0.6 volts
DEPLETED SUBSTRATE TRANSISTOR
SWITCHING SPEEDS
845 GHz when chilled to -55 C
765 GHz when at room temp
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STRUCTURESTRUCTURE
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MADE FROM INDIUM PHOSPHIDE AND
GALLIUM ARSENIDE
THICKER SOURCE AND DRAIN REGIONS
HIGH DI-ELECTRIC GATE
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WORKINGWORKING
PERFORMS SAME AS A CONVENTIONAL
TRANSISTOR
USES MOSFET
SOI TECHNOLOGY
CMOS GATE DIELECTRICS
RESISTANCE REDUCTION
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BALLISTIC TRANSISTOR
- USES ELECTRIC FIELD
- HIGHER SPEEDS (TERAHERTZ)
TYPESTYPES
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CNTFET
-FIELD EFFECT TRANSISTOR
- ARRAY OF CARBON NANOTUBES
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HIGH SPEED
LOW POWER CONSUMPTION
LOW POWER DISSIPATION
SMALL SIZE
NO LEAKAGE CURRENT
ADVANTAGESADVANTAGES
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ELIMINATES FLOATING BODY EFFECT
HEAT REDUCTION CAPACITY
VERTICAL FABRICATION
TEMPERATURE HANDLING COMPONENTS
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APPLICATIONSAPPLICATIONS
MANUFACTURING OF MICROPROCESSORS
AND CONTROLLERS
SPACE RESEARCHES
MEDICAL IMAGING DEVICES
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RADIOTELESCOPY
SUB MILLIMETER ASTRONOMY DEVICES
SECURITY DEVICES
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THANK YOU
