SFH 3410

NPN-Si-Fototransistor mit Vλ CharakteristikSilicon NPN Phototransistor with Vλ CharacteristicsLead (Pb) Free Product - RoHS Compliant

2005-03-04 1

Wesentliche Merkmale

• Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm

• Angepaßt an die Augenempfindlichkeit (Vλ)• SMT-Bauform ohne Basisanschluß, geeignet

für Vapor Phase-Löten und IR-Reflow-Löten• Nur gegurtet lieferbar

Anwendungen

• Umgebungslicht-Detektor• Beleuchtungsmesser• Dimmungssensor für Hintergrundbeleuchtung• „Messen/Steuern/Regeln“

TypType

BestellnummerOrdering Code

Fotostrom Ev = 20 lx, Standard light A, VCE = 5 VPhotocurrentIpce (µA)

SFH 3410SFH 3410-1/2SFH 3410-2/3SFH 3410-3/4

Q65110A1211Q65110A2653Q65110A2654Q65110A2655

>3.23.2…105…168…25

Features

• Especially suitable for applications from 350 nm to 970 nm

• Adapted to human eye sensitivity (Vλ)• SMT package without base connection,

suitable for vapor phase and IR reflow soldering• Only available on tape and reel

Applications

• Ambient light detector• Exposure meter for daylight and artificial light• Sensor for Backlight-Dimming• For control and drive circuits

2005-03-04 2

SFH 3410

Grenzwerte (TA = 25 ° C)Maximum Ratings

BezeichnungParameter

SymbolSymbol

WertValue

EinheitUnit

Betriebs- und LagertemperaturOperating and storage temperature range

Top; Tstg – 40 …+ 100 ° C

Kollektor-EmitterspannungCollector-emitter voltage

VCE 5.5 V

KollektorstromCollector current

IC 20 mA

Emitter-KollektorspannungEmitter-collector voltage

VEC 0.5 V

Kennwerte (TA = 25 ° C)Characteristics

BezeichnungParameter

SymbolSymbol

WertValue

EinheitUnit

Wellenlänge der max. FotoempfindlichkeitWavelength of max. sensitivity

λSmax 570 nm

Spektraler Bereich der FotoempfindlichkeitS = 10% von Smax

Spectral range of sensitivityS = 10% of Smax

λ 350 … 970 nm

Bestrahlungsempfindliche FlächeRadiant sensitive area

A 0.29 mm2

Abmessung der ChipflächeDimensions of chip area

L × BL × W

0.75 × 0.75 mm × mm

HalbwinkelHalf angle

ϕ ± 60 Grad.deg.

Kapazität, VCE = 0 V, f = 1 MHz, E = 0Capacitance

CCE 16 pF

DunkelstromDark currentVR = 5 V

ICEO 3 (< 50) nA

FotostromPhotocurrentEv = 20 lx, Normlicht/standard light A, VCE = 5 V

IPCE >3.2 µA

SFH 3410

2005-03-04 3

Directional Characteristics Srel = f (ϕ)

BezeichnungParameter

SymbolSymbol

WertValue

EinheitUnit

-1 -2 -3 -4

FotostromPhotocurrentEv = 20 lx, Normlicht/standard light AVCE = 5 V

IPCE 3.2…6.3 5…10 8…16 12.5…25 µA

Kollektor-Emitter-SättigungsspannungCollector-emitter saturation voltageIC = IPCEmin

1) × 0.3, EV = 20 lx

1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe1) IPCEmin is the min. photocurrent of the specified group

VCEsat 100 100 100 100 mV

OHF01402

90

80

70

60

50

40 30 20 10

20 40 60 80 100 1200.40.60.81.0

ϕ

0.2

0.4

0.6

0.8

1.0

1000

0

0

SFH 3410

2005-03-04 4

Relative Spectral Sensitivity Srel = f (λ)

Collector-Emitter CurrentICE = f (VCE; EV)

rel

OHF00851

λ

S

4000

500 600 700 800 900 nm 1100

10

20

30

40

50

60

70

80

%

100

λV

CE

OHF00854

I

00

A

CEVV

µ

1 2 3 4 5

10

20

30

40

50

60

70

80

200 lx

100 lx

20 lx

PhotocurrentIPCE = f (EV), VCE = 5 V

Photocurrent IPCE/IPCE(25 ° C) = f (TA)Ev = 20 lx, VCE = 1 V …5 V

PCE

OHF00852

I

11

VE

Aµ

lx10 100 1000

10

100

1000

PCE

OHF01024

I

-500

AT˚C

IPCE (25 ˚C)

-30 -10 10 30 50 90

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.8

Collector-Emitter CapacitanceCCE = f (VCE)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1E-03 1E-02 1E-01 1E+00 1E+01 1E+02

CCE

pF

VVCE

SFH 3410

2005-03-04 5

MaßzeichnungPackage Outlines

Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

GEOY6028

0.5

(0.0

20)

0.3

(0.0

12)

1.9

(0.0

75)

2.1

(0.0

83)

0.6

(0.0

24)

0.8

(0.0

31)

2.5 (0.098)2.7 (0.106)

0.2 (0.008)

EmitterCollector

4.8 (0.189)

4.4 (0.173)

1.15

(0.0

45)

0.95

(0.0

37)

0.2

(0.0

08)

0.3

(0.0

12)

0.0

(0.0

00)

0.1

(0.0

04)

Chip position

0.9

(0.0

35)

1.1

(0.0

43)0.6 (0.024)

(not connected)Active area0.29 mm2

0.2

(0.0

08)

0.6

(0.0

24)

2005-03-04 6

SFH 3410

Lötbedingungen Vorbehandlung nach JEDEC Level 4Soldering Conditions Preconditioning acc. to JEDEC Level 4IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B

Empfohlenes LötpaddesignRecommended Solderpad Design

Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

OHLA0687

00

T

t

˚C

s

120 s max

50

100

150

200

250

300

Ramp Up

100 s max

50 100 150 200 250 300

Ramp Down6 K/s (max)

3 K/s (max)

25 ˚C

30 s max

260 ˚C +0 ˚C-5 ˚C

245 ˚C ±5 ˚C240 ˚C255 ˚C

217 ˚C

Maximum Solder ProfileRecommended Solder Profile

235 ˚C -0 ˚C+5 ˚C

Minimum Solder Profile

10 s min

min. condition for IR Reflow Soldering:solder point temperature ≥ 235 °C for at least 10 sec.

OHF023931.8 2.4

1.3

1.8

Padgeometrie fürverbesserte Wärmeableitung

heat dissipationPaddesign for improved

1

0.3

SFH 3410

2005-03-04 7

Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburgwww.osram-os.com© All Rights Reserved.

The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may containdangerous substances. For information on the types in question please contact our Sales Organization.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packingmaterial that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costsincurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Criticalcomponents 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expectedto cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintainand sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.