Effiziente Modellbildung für Verbindungsstrukturen der … in der TET... · 2013-10-14 ·...

Effiziente Modellbildung für Verbindungsstrukturen

der Elektrotechnik

Vortrag am Lothar-Collatz-Zentrum für Wissenschaftliches Rechnen, Universität Hamburg

18. Juni 2013

Prof. Dr. sc. techn. Christian Schuster

Theoretische Elektrotechnik Technische Universität Hamburg-Harburg

2

Mitarbeiter

Xiaomin Duan, Sebastian Müller, Miroslav

Kotzev, Andreas Hardock, Heinz-Dietrich Brüns

Young Kwark, Xiaoxiong Gu, Renato Rimolo-

Donadio, Bruce Archambeault, Hubert Harrer,

Mark Ritter

Jim Drewniak, Jun Fan, Yaojiang Zhang

… und weitere!

3

1. Warum Leiterplatten, Streifenleiter und Vias?

2. Modellbildung in der Elektrotechnik

3. Effiziente Modellbildung für Leiterplatten

4. Anwendungen

5. Zusammenfassung und Ausblick

Übersicht

4




4. Anwendungen


Übersicht

32 node cards

1,024 chips

2.8/5.6 TF/s

512 GB

Rack 64 Racks

65,536 chips

180/360 TF/s

32 TB

System

32 chips

16 compute nodes, IO cards

90/180 GF/s

16 GB

Node card

2 chips

5.6/11.2 GF/s

1.0 GB

Compute node

2.8/5.6 GF/s

2 processors

Chip

A. Peters and J. Budnik, “High throughput computing on Blue Gene”,

IBM Systems and Technology Group, 2007

More than 500

PCBs in a rack!

Aufbau eines Server-Systems

5

Ein typisches Leiterplattendesign

6

John Isaac (Mentor Graphics): “Overcoming increasing PCB complexity

with automation”, www.techdesignforums.com, August 2012

Trends

7

Kosten

www.aberdeen.com, August 2012 8

... Schlussfolgerung:

Rapid high speed

design of complex

PCBs – and hence

via arrays and

their fanout –

remains of interest

9

10




4. Anwendungen


Übersicht

“Mathematisch-Numerisch”

UI

Z

s

jkr

jkr

UsddAr

eJ

j

dAr

eJ

j

4

4

11

“Elektrotechnisch”

12

Frequency

Ma

gn

itu

de

of Im

pe

da

nce


13

Frequency

Ma

gn

itu

de

of Im

pe

da

nce


14


15

S-, Y-, or Z-

Parameters


16


17

UI

Z

18




4. Anwendungen


Übersicht

Picture courtesy IBM Yorktown (Y. Kwark)

Power Planes

Stripline

Signal and

Power Vias

Transmission

Line Models

Planar Circuit

Models

Via Models

19

Leiterplatte im Querschnitt

Modell für Leitungen

I1

V1

I2

V2

lZ ,,0

20

2

2

0

0

1

1

)cosh(/)sinh(

)sinh()cosh(

I

V

lZl

Zll

I

V

(ABCD-Parameters)

x

y

z

(0,0,0) (a,0,0)

(a,b,0)

(a,b,d)

Port i Port j (xi,yi)

Open

Plane

Edges

Voltage

Current

(xj,yj)

Filling with and

CRM

kb

nk

a

mk ynxm ,, otherwise 2 and 0,for 1 , nmCC nm

0 0222

22pp )cos()cos()cos()cos()(

m n ynxm

jynjxmiynixm

nmijkkk

ykxkykxkCC

ab

djZ

21

1. Modell für planare Schaltkreise

T. Okoshi, “Planar Circuits for Microwaves and Lightwaves”, Springer Verlag, Berlin

x

y

z

Separation d


No

Plane

Edges Voltage

Current

(xj,yj)

Filling with and

)(

)(

2)(

0

)2(

1

)2(

0

0

pp

kH

kHjdZ

ij

ij

k,dist.port,radiusport 00

RWM

22



x

y

z

Separation d


Any

Type of

Plane

Edge Voltage

Current

(xj,yj)

Filling with and

CIM


23

sdkHdjVkHj

kV

C )(ˆ)()()(ˆˆ

2)( )2(

0

)2(

1 rJnrrrrrnRr

)2(

1H)2(

0H : Zero-order and first-order Hankel

function of the second kind

k, η, d: wavenumber, wave impedance and

thickness of the substrate


Top view, 5th cavity

Excitation: Gaussian pulse (fmax = 40 GHz)

24

Elektrisches Feldverhalten um Vias


Infinite planes Finite planes (Open)


25


26


1 Ground Via:

1 GND via

GND Via

SIG Via

27


2 Ground Vias:

28


4 Ground Vias:

29


6 Ground Vias:

30

Via Cross

Section

Modell für Vias

Cp

Zpp

Cp

Via

Plane

Plane Cp

Cp

Zpp

Parallel Plate

Impedance

Return

Current

Via

Current

31

'uiV

'liV

'liI

'uiI

vu

iC

vl

iC

pp

iZ' '

' '

0

0

pp ppu cu ui i ii i

pp ppl cl li i ii i

Y Yc

I Y VY Y

I Y VY Y

v

Via Array

' '

' '

0

0

cu pp ppu u

pp ppcll l

YYc

YI VY Y

I VY YY

v

Modell für Vias

32

Modell für Vias

Y. Zhang, J. Fan, G. Selli, M. Cocchini, and D. P. Francesco

“Analytical evaluation of via-plate capacitance for multilayer printed circuit boards and packages”

IEEE Trans. on Microwave Theory and Techniques, vol. 56, no. 9, September 2008.

(2) (2)

(2)

2 1

.

0 0

01,3,5..2

8 1( ) ( )

ln( ) ( )

N

n

dn n

n n

H k H kd k H k

ap

i

apb vi i iv v

i i

C r rr / r r

22

0 )/( dnkk rn

Verknüpfung mit Leitermodell

33

Trace between planes:

2 Modes: Stripline + Parallel Plate


Verknüpfung mit Leitermodell

34

Yv

uI

1

uI

2u

V2

uV

1

lV

1

lI

1

lV

2

lI

2

tltl

tltlsl

YkkYkk

YkkYkY

)12()(

)(

22

22

sl

pppp

ppppv

YYY

YYY

ul

l

hh

hk

admittance line

on Transmissitl

Y


tlYkk

tlYkk

tlYkk

tlYkk

tlYk0

0tl

Yk

)()(

)()(

)( 22

22

1

vl

vu

Y0

0Y

l

u

I

I

T T

1uv

1ui

2uv

2ui

3uv

3ui

1lv

1li 2l

v2l

i3l

v3l

i

u

uIV

l

lIV

pppp

pppp

YY

YY

Ztl Ztl

Zpp Zpp Zpp Zpp

l

u

V

V

vC

vC v

C

vC

vC v

C

R. Rimolo-Donadio, X. Gu, Y. H. Kwark, M. B. Ritter, B. Archambeault, F. D. Paulis, Y. Zhang, J. Fan, H.-D. Brüns, C. Schuster

“Physics-based via and trace models for efficient link simulation on multilayer structures up to 40 GHz”

IEEE Trans. on Microwave Theory and Techniques, vol. 57, no. 8, pp. 2072-2083, August 2009.

Modell für eine Kavität

35

Zpp Ztl

Decap

Linterc.

Zpp Ztl

Decap

Linterc.

Decap

Linterc.

Decoupling capacitor model

Cavity

N

Port i Port j

Port k

36

Vollständiges Leiterplattenmodell

Cavity

1

Cavities merged using

segmentation techniques

S-, Y-, or Z-

Parameters

6 Vias, 4 traces case

Centered striplines at two

levels, and thru vias in a 6

cavity stackup

Full-wave model

Mag

nit

ude

of

S12 [

dB

]

Frequency [GHz]

Model

FEM simulation

FIT simulation Full-wave model M

agn

itu

de

of

S14 [

dB

]

Frequency [GHz]

Model

FEM simulation

FIT simulation

37

Vergleich mit anderen Methoden

Computation is 2 to 3 orders of magnitude faster in comparison

to general-purpose numerical methods!

3D Model required

Field information available

High level description (text-based)

Network parameters

38

Vergleich mit anderen Methoden

• Identify & remove the bottlenecks

• Choose most efficient algorithms

• Use redundancies

• Parallelize the computation

39

Weitere Beschleunigung

Propagating

Field

Local

field

Local

field

Antipad Field Port 1

Port 3

Port 2

Port 4

Antipad model

Antipad model

Antipad model

Antipad model

Local field

model

Propagating

field model

(Zpp or Ypp)

Local field

model

Port 1

Port 3

Port 2

Port 4

Network

parameter

block

40

Modellierungsschritte

Antipad model

Antipad model

Antipad model

Antipad model

Local field

model

Propagating

field model

(Zpp or Ypp)

Local field

model

Antipad model

Antipad model

Antipad model

Antipad model

Local field

model

Propagating

field model

(Zpp or Ypp)

Local field

model

41

Modellierungsschritte

1. Calculation of propagating field models

2. Addition of local and antipad field models

3. Concatenation of single-cavity results

4. Other (“house keeping”)

42

Analyse der Modellierungsschritte

10

10

10

10

10

10

10

10

1

1

1

1

1

1

1

1

10 20 40 60 80 100

Other

Segmentation

Boundary layers

Ypp

Percentage of calculation time

1024 Vias (8s)

3600 Vias (291s)

10000 Vias (5924s)

Ypp is calculated

only once and

used for all cavities

→ segmentation

makes up more

than 80% of the

calculation time

0 20 40 60 80 100

Other

Segmentation

Boundary layers

Ypp

Percentage of calculation time

1024 Vias (29s)

3600 Vias (1055s)

10000 Vias (21476s)

12

8

9

11

10

10

9

12

1

1.1

1

1

1.2

1.2

1

1.2

1

Most general case:

additional

computational

effort due to

• Ypp calculations

• gnd and pwr vias

Analyse der Modellierungsschritte

43

Implemented parallelization approaches (using MPI):

• Parallelization over frequency

• Parallelization of matrix multiplications and inversions (ScaLAPACK library)

2 4 8 12 160

2

4

6

8

10

Number of processes

Sp

ee

du

p

freq 1024

freq 4096

inv 1024

inv 4096

Example with

three identical

cavities

44

Parallelisierung

……

……

……

……

……

.

1 2 3 4 5 6 99 100

101

201

301

401

501

9801

9901 10000

Pitch (80mil)

Signal via

with antipad:

rvia = 5mil,

rap = 15 mil

Ground via:

rvia = 5mil

Conductor: copper

(σ = 5.8∙107 S/m)

Substrate: εr = 3.7,

tan(δ) = 0.03

Infinite

planes

4951 4952 4953 4954 4956 4961 4966

Vias for the crosstalk study (center area of the board)

4:1 signal to ground via ratio → 8 000 signal vias

→ 16 000 ports

→ 256 000 000 scattering parameters

10

10

10

10

10

10

10

10

1

1

1

1

1

1

1

1

1 [mil]

89 mil ≈

2.26 mm

Beispiel mit 10 000 Vias

Simulation time per frequency point

→ (≈ 6.5 h) on a single core

→ (≈ 40 min) on 16 cores

45 S. Müller, F. Happ, X. Duan, R. Rimolo-Donadio, H.-D. Brüns, C. Schuster

“Complete modeling of large via constellations in multilayer printed circuit boards”

IEEE Trans. on Components, Packaging and Manufacturing Technology, vol. 3, no. 3, pp. 489-499, March 2013.

46




4. Anwendungen


Übersicht

47

Anwendungen

1. Design of controlled vias

2. Effect of misreferencing

3. DM to CM conversion

4. Parametric analysis of backplanes

1. A. Hardock, S. Müller, X. Duan, H.-D. Brüns, C. Schuster, „Minimizing Displacement Return Currents in Multilayer Via

Structures“ IEEE EPEPS, Tempe, USA, October 21-24, 2012.

2. S. Müller, R. Rimolo-Donadio, H.-D. Brüns, C. Schuster, „Effect of Mixed-Reference Planes on Single-Ended and

Differential Links in Multilayer Substrates“, IEEE Workshop on Signal Propagation on Interconnects (SPI), Hildesheim,

Germany, May 9-12, 2010.

3. R. Rimolo-Donadio, X. Duan, H.-D. Brüns, C. Schuster, „Differential to Common Mode Conversion Due to Asymmetric

Ground Via Configurations“, IEEE SPI Workshop, Strasbourg, France, May 12-15, 2009.

4.R. Rimolo-Donadio, T.-M. Winkel, C. Siviero, D. Kaller, H. Harrer, H.-D. Brüns, C. Schuster, „Fast Parametric Pre-Layout

Analysis of Signal Integrity for Backplane Interconnects“, IEEE SPI Workshop, Naples, Italy, May 8-11, 2011.

48

Effect of Interconnects on Signals

The ideal interconnect will simply delay the signal:

Any real interconnect will additionally change timing and amplitude:

t

Tx Rx

t

Tx Rx

49

Effect of Interconnects on Signals

In frequency domain:

Magnitude of Transmission

Frequency

Ideal Interconnect

Real Interconnect

IC Transmitter IC Receiver

Backplane Interconnect

50

??

Total response (Network parameters)

Port 1a Port 2c

Port na Port nc Iterative loop

Substrate 1(Board)

Port 1a

Port na

Port 2a

Port na

Substrate 2 (Backplane)

Port 1b

Port nb

Port 2b

Port nb

Port 1c

Port nc

Port 2c

Port nc

Substrate 3 (Board)

Connector Connector

Automated concatenation (segmentation)

Selected design variables

Parametric Study – Set Up

51

Frequency [GHz]

Mag

nit

ude

of

S1

2 [

dB

]

Card 1 + Backplane + Card 2

Backplane trace at

cavity 2

Backplane trace at

cavity 11

Total simulation time

~ 150 seconds

(PIV 2.4 GHz, 2 GB)!

Effect of

backplane trace

position (layer)

Trace position

Parametric Study – Results

52

Effect of stub

removal

Mag

nit

ude

of

S1

2 [

dB

]

6:10:6

6:2:6

2:2:6

Cavities below the trace for

card 1 : backplane : card 2

2:2:2

Parametric Study – Results

53

54




4. Anwendungen


Übersicht

Zusammenfassung

55

2D visualization

Project view

Status view Plot of results

Stackup view

Multilayer Substrate Simulator (MLSS) @ TET

Ausblick

56

Anwendungs-

bereich

Methodik

www.tet.tuhh.de


Effiziente Modellbildung für Verbindungsstrukturen der … in der TET... · 2013-10-14 ·...

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