1 1

2011Jahresbericht- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - aNNUaL rePOrt

F R A U N H O F E R c E N t E R N A N O E l E c t R O N i c t E c H N O l O g i E s

2 3

Preface 4

Fraunhofer center Nanoelectronic technologies Overview

Profile 8

Figures 12

Cooperation 16

competence Areas and Research Results 19

Analytics 20

FunctionalElectronicMaterials-FrontEndofLine 26

FunctionalElectronicMaterials-BackEndofLine 32

MasklessLithography 40

Devices&Integration 46

Events 54

Publications 59

contact 64

Editorial Notes 65

cONteNts

4 5

Für das FraunhoferCenterNanoelektronische Technolo-

gien(CNT)war2011einerfolgreichesJahr,indemeinige

Rahmenbedingungen für die zukünftige Entwicklung

geschaffenwurden.

Die langeZeitderUngewissheitseit2009bezüglichder

angemieteten Reinraum-, Labor- und Büroflächen nach

der Insolvenzdes IndustriepartnersQimonda,wurdemit

dem Erwerb des ehemaligen Qimonda-Geländes durch

InfineonimJuni2011beendet.InfineonhatdasInteres-

se bekundet, die Flächen auchweiterhin an Fraunhofer

zu vermieten und standortbezogene Dienstleistungen

anzubieten. Die Verhandlungen dazu sollen in 2012

abgeschlossenwerden.IneinemumfassendenStrategie-

prozesshabenwir langfristigdieKernkompetenzenund

Geschäftsfelderneudefiniert sowiedieZiele festgelegt.

DerJahresberichtgibtIhnendazueinengutenÜberblick.

BesonderserfreulichistdieZunahmevonAufträgen,ne-

bengroßenIC-Herstellern,geradevonmittelständischen

UnternehmenundStart-up Firmen,dieunabhängig von

FörderprojektendirektandieEinrichtungerteiltwurden

undindiesemJahr,denUmfangvonnahezueinerMillion

Euroerreichten.Dies isteinmalmehrderBeweisfürdie

Wertschätzung der vorhandenen Kompetenzen und die

Erkenntnis, dass die Ergebnisse aus der Nanoelektronik

zunehmendAnwendungenauchinSystemenderMikro-

elektronik findengemäßdemMotto„Nano forMicro“.

Mein besonderer Dank geht an die Auftraggeber, die

das Fraunhofer CNT auch in den turbulenten vergan-

genen Jahren als zuverlässigen Forschungsdienstleister

geschätzt haben,woraus sich auch einige längerfristige

Partnerschaftenentwickelten.

Als Beispiel sei hier ASM International genannt. Nach

mehrerenJahrenvertrauensvollerZusammenarbeitkonn-

temitdieseminternationalführendenAnlagenhersteller

eine längerfristige, bilaterale Kooperation im Bereich

Atomlagenabscheidung (ALD) und Epitaxie abgeschlos-

sen werden. Unsere Kompetenz im Bereich Prozesse,

PreFace

Materialien und Anlagen soll zukünftig durch weitere

Kooperationen ausgebaut werden. Als ein beständiger

PartnerfürEntwicklungsprojekteerwiessichunserIndus-

triepartner GLOBALFOUNDRIES. Durch dessen deutliche

VerbreiterungdesTechnologie-undProduktportfoliosals

Foundry ergaben sich zusätzliche Anknüpfungspunkte

für Industrieaufträge, die erfolgreich zum Abschluss

gebracht wurden. Zudem sind neue Forschungsinhalte

definiertworden.MehrereProjekteundVereinbarungen

konnten zudem mit anderen IC-Herstellern, IP-Firmen

undAnlagenherstellernsowohlimBereichAbscheidung,

Hoch-TemperaturBehandlungalsauchbeiTestsystemen

z.B.mitderFirmaTokyoElektron(TEL)getroffenwerden.

Seit Mitte 2011 konnte das Fraunhofer CNT auf eine

Grundfinanzierung zurückgreifen. Damit wurden unter

anderemdievorhandenenKompetenzenfürMIM(Metall-

Isolator-Metall) Kondensatorstrukturen, z.B. für Puffer-

speicher inAnalog/DigitalMixedSignalBausteinenoder

inmikroelektronischenSystemen,weiterentwickelt.

DurchdievomLandSachsengefördertenProjekteinden

Geschäftsfeldern „Enabling 300mm Production“ und

„Nanopatterning“ sowie „Innovative Materialien und

Prozesse für dieNano-undMikroelektronik“ konntedie

herausragendeQualitätunddasPotentialderetablierten

Technologien gerade in der breitenAnwendung für die

Mikrosystemtechnik und Nanoelektronik bei Strukturen

unter30nmdemonstriertwerden.DurchdieseProjekte

hatdieEinrichtungwesentlichdazubeitragen,Innovatio-

neninden„KeyEnablingTechnologies“voranzutreiben,

wie in einer EU Kommunikation im September 2009

„Preparing for our future: Developing a common strat-

egyforkeyenablingtechnologies intheEU"SEC(2009)

1257beschrieben.

Damit liefert das Fraunhofer CNT auchweiterhin einen

wesentlichen Beitrag für die herausragende Stellung

Dresdens als Mikroelektronik-Standort in Europa, als

Bindeglied zwischen „More Moore“ und „More than

Moore“ Technologien und Anwendungen. Besonders

A steady partner for development projects is our

industry partners GLOBALFOUNDRIES. Its significant

broadening of the technology and product portfolio

asafoundryresultedinadditionalindustryordersthat

have been completed successfully. In addition, new

researchcontenthasbeendefined.Severalprojectsand

agreementswerealsomadewithotherICmanufacturers,

IPcompaniesandequipmentmanufacturersinthefield

ofdeposition,high-temperaturetreatmentaswellasin

testsystemswiththecompanyTokyoElectron(TEL).

Since mid-2011, Fraunhofer CNT can rely on core

funding.Amongotherthings,thiswasusedtodevelop

the existing competencies for MIM (metal-insulator-

metal) capacitor structures, e.g. for buffermemory in

analog / digitalmixed signal ICs or inmicroelectronic

systemsevolved.

By thestateofSaxony-fundedprojects in thefieldsof

"enabling 300mmProduction" and "Nanopatterning"

and"Innovativematerials andprocesses fornano-and

microelectronics" the outstanding quality and the

potentialofestablishedtechnologiescurrently inwide

use for microsystems technology and nanoelectronics

weredemonstratedinstructuresbelow30nm.

Through these projects, the Fraunhofer CNTwas able

to significantly push innovations in the "Key Enabling

Technologies"forward,statedinanEUCommunication

inSeptember2009"Preparingforourfuture:Developing

acommonstrategyforkeyenablingtechnologiesinthe

EU"SEC(2009)1257.ForthisreasontheFraunhofer

CNTcontinuestocontributetotheprominentposition

ofDresdenasamicroelectronic location inEurope, as

alinkbetween"MoreMoore"and"MorethanMoore"

technologiesandapplications.

Particularly encouraging, the conclusion of two other

promotions at Fraunhofer CNT with the subjects:

2011 was a successful year for Fraunhofer Center

Nanoelectronic Technologies (CNT) in which the

frameworkforfuturedevelopmenthasbeencreated.

Thelongperiodofuncertaintysince2009regardingthe

rentedcleanroom,laboratoryandofficespacefollowed

bytheinsolvencyofindustrypartnerQimonda,hasbeen

completedwiththeacquisitionofQimonda’sproperties

by Infineon in June 2011. Infineon has expressed an

interest in further collaborations with Fraunhofer by

providing facilities and location-based services. The

negotiations shouldbecompleted in2012. Long-term

corecompetencies,businessareasandgoalshavebeen

established in a comprehensive strategy process. This

annualreportgivesyouagoodoverview.

Particularly pleasing is the increase of orders, from

major IC manufacturers and especially from medium-

sized companies and start-up companies which were

granted,regardlessoffundingprojects,directlytothe

institution.Thisyear,theamounthasreachednearlyone

millionEuros.Thisisanotherproofoftheappreciation

of the CNT competencies and the evidence that

results from nanoelectronic research increasingly find

applications inmicroelectronics systems in accordance

withtheslogan"NanoforMicro."

My special thanks goes to the authorities who have

valued theFraunhoferCNTas reliable researchservice

provider in the turbulent last years from which, also

some longer-term partnerships have developed. As

an example, ASM International is mentioned. After

several years of faithful cooperationwith this leading

international equipment manufacturer, a longer-term

bilateral cooperation in the field of atomic layer

deposition(ALD)andepitaxyiscompleted.Ourexpertise

inprocesses,materialsandequipmentisplannedtobe

expandedthroughfurthercooperation.

Director: Prof. Dr. Peter Kücher

6 7

PreFace

erfreulichwarauchderAbschlussvonzweiweiterenPro-

motionen imFraunhoferCNTmitdenThemen:Kinetik

der elektrochemischen Kupferabscheidung in Sub-100

nm-Strukturen und der Analyse von High-kMaterialien

mittels Atom Probe. Alle Doktoranden bestätigten die

EffektivitätmitderdieArbeiten,geradedurchdieenge

Zusammenarbeitmitder Industrieunddenbetreuenden

Professoren, durchgeführt werden konnten. Viele Mit-

arbeiter undMitarbeiterinnen haben sich im Laufe des

Jahres z.B. bei der„LangenNachtderWissenschaften“

oder beim Praktikum von Schülern, z.B. des Martin-

Andersen-NexöGymnasiumsengagiert.

Am 2. November fand der zweite „Fraunhofer CNT

Research Day“ statt. Dafür konnten wir mehrere Ex-

pertenmit Beiträgen von führendenUnternehmen wie

z.B. Infineon, STMicroelectronics, ASM und CEA-Leti,

Air Liquide begrüßen, die neben Wissenschaftlern aus

unserem Institut neueste Erkenntnisse und Strategien

auf verschiedenen Fachgebieten vorstellten. Die große

Beteiligungmitnahezu100Teilnehmernunddaspositive

FeedbackderGästesindMotivation,dieseVeranstaltung

auch im nächsten Jahr fortzuführen. Als Auszeichnung

fürdiewissenschaftlicheKompetenzamCNTdürfenwir

die Entscheidung werten, den 17thWorkshop on Diel-

ectrics inMicroelectronics(WoDiM)vom25.-27.6.2012

ausrichtenzudürfen.

Die Einrichtung wurde mit ihren Kompetenzbereichen

und der Ausrichtung auf neue Anwendungsfelder

optimiert aufgestellt. Für das Jahr 2012 und darüber

hinausermöglichtdieseinweiteresWachstumundlässt

uns positiv in die Zukunft schauen. Dies verdankt das

Fraunhofer CNT engagierten und kompetenten Mitar-

beitern und Mitarbeiterinnen sowie unseren Partnern

ausderIndustrie,anderenForschungseinrichtungenund

Instituten, denen ich andieser Stelle besonders für das

entgegengebrachteVertrauendankenmöchte.

Prof.Dr.PeterKücher

kinetics of electrochemical deposition of copper in

sub-100 nm structures and the analysis of high-k

materialswithAtomProbe.Allstudentsconfirmedthe

effectivenessoftheirworkthroughaclosecooperation

withtheindustryandthesupervisingprofessors.Many

staff members were engaged in activities such as the

"Night of Science" or the internship of students e.g.

fromthe“MartinAndersenNexo”-school.

OnNovember2ndthesecond"FraunhoferCNTResearch

Day" took place with several experts from leading

companies such as Infineon, STMicroelectronics, ASM

and CEA-Leti, Air Liquide and researchers from our

institutewhopresentedthelatestresultsandstrategies

in various fields. The large turnout with about 100

participantsandthepositivefeedbackfromguestsare

motivation to continue this event again in 2012. As

recognition of the scientific expertise at the CNT, we

evaluate the decision, to host the 17thWorkshop on

Dielectrics inMicroelectronics (WoDiM) June25 -27,

2012inDresden.

The facility has been optimized regarding its

competence areas and new fields of applications. For

the year2012andbeyond, this allows furthergrowth

and a positive perspective for the future. Iwould like

to use this opportunity to thank our highlymotivated

and competent employees as well as all our business

partnersandsupportersfortheirconfidence.

8 9

Forschung und entwicklung im Fraunhofer cNt

DasGeschäftsfeld des FraunhoferCNTumfasst die Ent-

wicklungvonProzessschrittenundMaterialiensowiedie

physikalischeundelektrischeCharakterisierungfürHigh-

Performance-Logik,Derivate(z.B.embeddedDRAM)und

Speichertechnologien für flüchtige und nicht-flüchtige

Bauelemente.

Zielsetzung der Einrichtung ist es, innovative Einzelpro-

zesslösungen für nanoelektronische Systeme vor allem

auf300mmWafernmit Industriepartnernundanderen

Forschungseinrichtungen so zu entwickeln, dass diese

schnell in ein industrielles Fertigungsumfeld übertragen

werdenkönnen.

Das Leistungsangebot des Fraunhofer CNT basiert auf

fünfKompetenzbereichen:

Analytik

FunktionaleElektronischeMaterialien-FrontEndofLine

FunktionaleElektronischeMaterialien-BackEndofLine

Devices&Integration

MaskenloseLithographie

Die Kompetenzbereiche forschen vor allem in den fol-

gendenGeschäftsfeldern:

LeadingEdgeTechnologiefürdieNano-Mikroelekt

ronik

Enabling300mmProduction Nanostructuring

PrOFiLe

research and Development at Fraunhofer cNt

ThebusinessareasofFraunhoferCNTincludethedeve-

lopmentofprocessesandmaterialsaswellasthephysi-

calandelectricalcharacterizationofhigh-performance-

logics, derivates (e. g. embedded DRAM) andmemory

technologiesforvolatileandnon-volatiledevices.

In close cooperation with industrial partners and

other R&Dorganizations, theobjectiveof our institute

is to develop innovative unit process solutions for

nanoelectronic systemson300mm siliconwafers. The

aim is to transfer research results fast into industrial

manufacturing.

TherangeofservicesofferedbyFraunhoferCNTisbased

onfivecompetenceareas:

Analytics FunctionalElectronicMaterials-FrontEndofLine

FunctionalElectronicMaterials-BackEndofLine

Devices&Integration MasklessLithography

The competence areas do research especially in the

followingfields:

Leadingedgetechnologyfornano-micro-electronic Enabling300mmproduction Nanostructuring

environment

At present, Fraunhofer CNT uses 800 m² clean room

area (class 1000) and an infrastructure which meets

industry standards. Inaddition to40clean roomtools,

scientistsatFraunhoferCNTuseconsiderableanalytical

andmetrological processes for R&D as well as for the

characterizationofnanoelectronicdevices.

The institute does not maintain a continuous process

line to cover all the necessary process steps in order

to realize high-integrated memory chips. However,

FraunhoferCNTpossessesnewprocesstoolswhichare

typical of production and enabling common research

anddevelopmentwithitspartners.

Pre-processedwafersareprovidedbyGLOBALFOUNDRIES

–innovativeprocessstepswillbeoperatedatFraunhofer

CNT. Thus, the results canbe transferred immediately

into manufacturing. This enables partners to reduce

their capital expenditures.Moreover, it allows a faster

schedule.

ausstattung

Für das Fraunhofer CNT stehen derzeit 800m² Reinraum-

fläche (Reinraumklasse 1000) sowie eine Infrastruktur zur

Verfügung,diedemIndustriestandardentspricht.Zusätzlich

zudenca.40Anlagen imReinraumkönnenumfangreiche

Analyse- und Metrologieverfahren für die Forschung und

Entwicklung sowie die Bausteincharakterisierung genutzt

werden.

Die Einrichtung unterhält keine durchgängige Prozesslinie

in der alle notwendigen Prozessschritte zur Realisierung

höchstintegrierterChips zurVerfügung stehen. Sie verfügt

aber über neue, fertigungstypische Prozessgeräte, an

denendie Partner zusammenmit denWissenschaftlern im

FraunhoferCNTforschenundentwickelnkönnen.

Teilprozessierte Wafer kommen von GLOBALFOUNDRIES -

die innovativen Prozessschrittewerden im Fraunhofer CNT

durchgeführt. Die gewonnenen Erkenntnisse können dann

sofort in die praktische Erprobung in der angrenzenden

Fertigung übertragenwerden. Dadurch lassen sich sowohl

Investitionen für die Partner minimieren, als auch ein

schnellererZeitablaufermöglichen.

10 11

Kooperationspartner in unmittelbarer Umgebung

DasFraunhofer-CenterNanoelektronischeTechnologien

-2005entsprechenddemModelleinerPublic-Private-

Partnershipgegründet-istnebendererfolgreichen

KooperationmitdemHalbleiterherstellerGLOBALFOUNDRIES

DresdenModuleOneLLC&Co.KGauchfürdieZu-

sammenarbeitundDurchführungvonProjektenmitver-

schiedenenForschungseinrichtungen,Industriepartnern

undUniversitätensowieZulieferfirmenderIC-Industrie

wieMaterial-undGeräteherstellernoffen.

InunmittelbarerUmgebungdesFraunhoferCNTbefin-

densichdieHalbleiterherstellerGLOBALFOUNDRIES,

InfineonundX-Fab.DazubietetDresden,eingebettet

inSiliconSaxony,ausgezeichneteStandortbedingungen

fürdasFraunhoferCNTalsetablierteForschungsplatt-

formderNanoelektronik.DurchdielokaleNähezu

denFertigungsliniendesPartnersunddasvorhandene

Know-howkönnenvieleSynergieeffektegenutztwer-

den.Dadurchistesmöglich,Entwicklungenundneue

ProzesseschnellindieFertigungsabläufeeinzubauen,

waseswiederumerlaubtHerstellungskostenund-zeit

zusparen.

„DurchdieNutzungvonSynergienzwischenderRefe-

renzvonFertigungslinien,basierendaufmodernster300

mmWafertechnologie,sowiedemFachwissenunserer

MitarbeiterkönnenwirProjekteerfolgreichundzeitnah

durchführen.“

Prof.Dr.PeterKücher

PrOFiLe

cooperation partner in the immediate vicinity

Fraunhofer Center Nanoelectronic Technologies was

foundedin2005accordingtothemodelofapublicprivate

partnership.Apartfromthesuccessfulcooperationwith

the semiconductor manufacturer GLOBALFOUNDRIES

Dresden Module One LLC & Co. KG, the institute is

open for the collaboration and execution of projects

withdifferentresearchorganizations,industrialpartners,

universities as well as semiconductor suppliers such as

materialandtoolmanufacturers.

The semiconductor manufacturers GLOBALFOUNDRIES,

Infineon and X-Fab are located close to Fraunhofer

CNT. In addition, Dresden and Silicon Saxony offer

excellent site conditions. Because of the proximity

to the manufacturing lines of the partners and of

the established know-how, Fraunhofer CNT benefits

from numerous synergy effects. Thus, it is possible to

implementinnovativedevelopmentsandnewprocesses

fast intomanufacturing. Italsoenablesthepartnersto

savetimeandproductioncosts.

„Benefitingfromsynergiesbetweenthereferenceofthe

manufacturing lineson thebasisof latest300mmwafer

technologyaswellasoftheknow-howofouremployees,

we are able to perform our projects successfully and

immediately.“

Prof.Dr.PeterKücher

cOLLabOratiON

12 13

DasFraunhoferCNTerwirtschaftete2011einenErtragvon

ca. 8,8MioEuro.DerBetriebshaushaltsetztesichzuca.

51%ausWirtschaftserträgen,zuetwa7%ausErträgen

ausnationalenöffentlichenProjekten,zurund3%ausEU-

Erträgen,zurund22%aussonstigenErträgenundzu17%

ausSonderfinanzierungsmittelnzusammen.

ZurBearbeitungderForschungsaufträgestehenauf800

m²Reinraumflächeund200m²Laborflächemodernste

LaborausstattungenundGroßgerätezurVerfügung.Der

AnlagenparkumfasstAbscheide-undÄtzanlagenfürdieWär-

mebehandlungbeiHochtemperaturensowieInspektions-und

AnalysegerätezumBestimmenvonDefektenunddemMessen

vonSchichteigenschaften.

ZumJahresende2011beschäftigtedasFraunhoferCNT49

festangestellteMitarbeiter.DasPersonalsetztesichaus32

Wissenschaftlerneinschließlich7Doktoranden,6technischen

Mitarbeiternund11MitarbeiterninManagementundVer-

waltungzusammen.MitmodernstemAnlagenpark,intensiver

VorlaufforschungsowieeinerlangjährigenIndustrieerfahrung

stehendieMitarbeiterdesFraunhoferCNTihrennationalen

undinternationalenKundenundPartnernzurSeite,um

InnovationenfürdieZukunftnutzbarzumachen.

Expenditures and Revenues 2011

Annual Budget 2011 in k € in %

Revenues 8.771

Industry 4.508 51,0

Publicity(national) 632 7,0

Publicity(EU) 281 3,0

Others 1.918 22,0

AdditionalIncome 1.432 17,0

Head of Administration: Antje Spitzer

50

45

40

35

30

25

20

15

10

5

0

Personnel 2006 - 2011

200620072008200920102011

Scientificpersonnel Management/Administration/

Operation

In 2011 Fraunhofer CNT generated revenues of about 8.8

millionEuro.Theoperationbudgetwascomposedof51%of

industryreturns,3%earningsfromnationalpublicprojects,

7%ofEUearnings,22%ofother revenuesand17%of

specialfinancing.

InordertoprocessR&Dwafersprofessionally,Fraunhofer

CNT has an area of 800 m² clean room and 200 m²

laboratory availablewhich are equippedwith the latest

semiconductor R&D tools. The equipment ranges from

depositionandetchingtoolsusedfortheheattreatment

at high-temperatures as well as from inspection and

analytic toolswhichareusedforthecharacterizationof

defectsandlayers.

Intheendof2011,FraunhoferCNTemployed49permanent

staff.Thepersonnelwascomposedof32scientistsincluding

7 Ph.D. students, 6 technicians and 11 employees in

administrationandmanagement.Equippedwiththelatest

devices, intense initial researchanda long-lasting industry

know-how,employeesofFraunhoferCNTprovidesupport

totheirnationaland internationalcustomersandpartners

inordertorealizeinnovationsinthefuture.

DasFraunhoferCNThat2011ca.1MioEuroinvestiert,

umseintechnischesEquipmentzuerweitern.DieseInves-

titionenwurdenausdemEuropäischenFondfürRegionale

EntwicklungundvomFreistaatSachsengefördertsowieaus

Sondermittelnfinanziert.

DerstrategischeIndustriepartnerGlobalfoundriessetzteseine

ZusammenarbeitmitdemFraunhoferCNTkontinuierlichin

mehrerebereitsvor2011gestartetenForschungsvorhaben

fort.

FürGlobalfoundrieswurdesobeispielsweiseeineschädi-

gungsfreie,plasmagestützteStrukturierungvonUltra-low-k

DielektrikafürdieAnwendungineinersub30nm-Technologie

entwickelt.

EinweiteresProjektbeinhaltetdieEntwicklung zukünftiger

High-k gate-Dielektrik-transistoren einschließlicheiner

MachbarkeitsstudiefürferroelektrischeSpeicher.

DarüberhinausarbeitetendieWissenschaftlerdesCNTin

einemProjektanderEntwicklung einer Verdrahtungstech-

nologie für kleinste strukturenunterBerücksichtigungder

wachsendenAnforderungenandieelektrischeZuverlässigkeit,

sowieineinemProjektanderOptimierung von Metal-

gate-ProzessenfürdieReplacement-Gate-Technologieund

EntwicklungvonProzessenzurVerbesserungderZuverlässig-

keitvonHigh-k-Metal-Gate(HKMG)-Stapeln.

Dasin2010vonGlobalfoundriesbeauftragteProjekt„Verbes-

serungderMikroprozessoreneigenschaftenmittelsEinsatzvon

Kohlenstoff“wurdein2011erfolgreichabgeschlossen.

WeitereProjektewurdenmitverschiedenennamhaften

ForschungseinrichtungenundUnternehmenumgesetzt,

sobeispielsweiseeinProjektmitASELTANanographics

(Frankreich)zurE-BeamProximityEffektKorrekturfürdie

HerstellungvonoptischenMaskenundAnwendungenim

BereichdermaskenlosenLithografie.

TheFraunhoferCNThasinvestedabout€1million

toexpanditstechnicalequipmentin2011.These

investmentswerefinancedthroughtheEuropean

RegionalDevelopmentFund,theFreeStateofSaxony

andfromspecialfunds.

ThestrategicindustrypartnerGlobalfoundriessteadily

continuedhiscollaborationwiththeFraunhoferCNTin

severalresearchprojectsthatstartedbefore2011.

OnedevelopmentforGlobalfoundrieswasadamage-

free,plasma-basedpatterningofultra-low-kdielectrics

fortheuseinasub30nmtechnology.Anotherproject

involvesthedevelopment of future high-k gate

dielectric transistorsincludingafeasibilitystudyfor

ferroelectricmemory.

Furthermore,scientistsatCNTwereworkingona

projecttodevelop a wiring technology for smallest

structures,consideringthegrowingdemandsonthe

electricalreliability.Anotherprojectisworkingon

theoptimization of metal-gate processes for the

replacement-gate technologyanddevelopmentof

processestoimprovethereliabilityofhigh-kmetal

gate(HKMG)stacks.

Thein2010commissionedGlobalfoundriesproject

"Improvementofthemicroprocessorfeaturesthrough

theuseofcarbon"wassuccessfullycompletedin

2011.

Otherprojectshavebeenimplementedwithseveral

renownedresearchinstitutesandcompanies,suchas

theprojectwithASELTANanoGraphics(France)for

e-beamproximityeffectcorrectionforthemanufacture

ofopticalmasksandapplicationsinmaskless

lithography.

FraUNhOFer cNt iN FigUres

14 15

15million€

10million€

5million€

Development of Operating Budget 2006 - 2011

200620072008200920102011

OtherOperatingExpenses

Equipment/CleanroomExpenses

15million€

10million€

5million€

Development of Project Revenue 2006 - 2011

200620072008200920102011

Industry

Publicly(EU)

Publicly(national)

AdditionalIncome

Others

PersonnelExpenses

ZusammenmitderNamlabgGmbHentwickeltedasFraun-

hoferCNTAlD-Abscheidetechniken fürHafnumdioxid

basierendeneueMaterialienundwenigeatomlagendicke

Schichtsysteme.

ImRahmendesSpitzenclustersCoolSiliconistdasFraunhofer

CNTandemTeilvorhaben„Technologienfürenergieeffiziente

Computing-Plattformen“beteiligtunduntersuchthiereinen

selektivenSiGe-Epitaxieprozessmitinsiut-Dotierung.

ImBereichAnalytikerprobtdasFraunhoferCNTimRahmen

einessächsischenVerbundprojektesgemeinsammitderFirma

X-FABSiliconFoundriesinnovativeAnalyseverfahrenfürdie

OptimierungvonFertigungsprozessenbeiderHerstellungvon

mikroelektronischenBauelementenmittels3D-Atomsonde,

HR-TEMundSIMS.

Entrance of Fraunhofer CNT

TogetherwiththeNaMLabgGmbH,theFraunhofer

CNTdevelopedAlD deposition techniquesfor

Hafnumdioxidbasednewmaterialsandafewatomic

layerthick-layersystems.

AspartoftheExcellenceCluster“CoolSilicon”

FraunhoferCNTisinvolvedinthesub-project

"TechnologiesforEnergyEfficientComputing

Platforms"andisinvestigatingaselectiveSiGeepitaxy

withinsiutdoping.

AspartofajointSaxonproject,FraunhoferCNTand

X-FABSiliconFoundriestestinginnovativeanalytical

methodsfortheoptimizationofmanufacturing

processesinthemanufactureofmicroelectronic

devicesusing3Datomprobe,HR-TEMandSIMS.

16 17

Der Fraunhofer-Verbund Mikroelektronik (VµE) koordiniert

die Aktivitäten der auf den gebieten Mikroelektronik und

Mikrointegration tätigen Fraunhofer-institute.

Die Technologiekompetenz des Verbunds reicht von

der klassischen CMOS-Technologie bis zum Einsatz

innovativer Systemlösungen. Sie schließt neben Silizium

auch Verbindungshalbleiter und neue Materialien ein. Die

Kompetenz in der Entwicklung von CMOS- und anderen

Bauelementetechnologien für die Mikroelektronik stellt die

BasissowohlfürtechnologischeDienstleistungenalsauchfür

anwendungsbezogene Komponentenentwicklung dar. Das

FraunhoferCNT istAnsprechpartner fürdieBereiche„More

Moore“und„BeyondCMOS“imGeschäftsfeldTechnologie.

FraUNhOFer verbUND miKrOeLeKtrONiK

The Fraunhofer Group for Microelectronics (VμE)

coordinates the activities of Fraunhofer institutes working

in the fields of microelectronics and microintegration.

Thegroup’sexpertiserangesfromclassicCMOStechnology

to the use of innovative system solutions. Apart from

silicon, this also includes compound semiconductors and

new materials. Expertise in developing CMOS and other

device technologies for microelectronics forms the basis

for both, technological services and application-specific

component development. Fraunhofer CNT is the contact

for the business area Technology which consists of two

divisions:„MoreMoore“and„BeyondCMOS“.

ForschenfürdiePraxisistdiezentraleAufgabederFraunhofer-

Gesellschaft. Die 1949 gegründete Forschungsorganisation

betreibt anwendungsorientierte Forschung zum Nutzen der

WirtschaftundzumVorteilderGesellschaft.Vertragspartnerund

AuftraggebersindIndustrie-undDienstleistungsunternehmen

sowiedieöffentlicheHand.

Die Fraunhofer-Gesellschaft betreibt in Deutschland derzeit

mehrals80Forschungseinrichtungen,davon60Institute.Mehr

als17.000MitarbeiterinnenundMitarbeiter,überwiegendmit

natur-oderingenieurwissenschaftlicherAusbildung,bearbeiten

dasjährlicheForschungsvolumenvon1,7MrdEuro.Davonfallen

1,4MrdEuroaufdenLeistungsbereichVertragsforschung.Zwei

Drittel dieses Leistungsbereichs erwirtschaftet die Fraunhofer-

GesellschaftmitAufträgenausderIndustrieundmitöffentlich

finanzierten Forschungsprojekten. Nur etwas ein Drittel wird

von Bund und Ländern als Grundfinanzierung beigesteuert,

damit die Institute Problemlösungen erarbeiten können, die

erst in fünfoderzehnJahren fürWirtschaftundGesellschaft

aktuellwerden.

FraUNhOFer-geseLLschaFtResearchforpracticeisthemainissueofallactivitiespursuedby

theFraunhofer-Gesellschaft.Theresearchorganization,which

wasfoundedin1949,undertakesappliedresearchthatdrives

economicdevelopmentandservesthewiderbenefitofsociety.

Itsservicesaresolicitedbycustomersandcontractualpartners

inindustry,theservicesectorandpublicadministration.

Atpresent,theFraunhofer-Gesellschaftmaintainsmorethan

80researchunits inGermany, including60Fraunhofer insti-

tutes. Themajorityof themore than17.000employeesare

qualified scientists andengineerswhoworkwith an annual

researchbudgetof1.7billioneuro.Morethan1.4billioneuro

of this amount are generated through contract research.

TwothirdsoftheFraunhofer-Gesellschaft‘scontractresearch

revenues derive fromcontractswith industrialpartnersand

frompubliclyfinancedresearchprojects.Onlyonethirdiscon-

tributedby theGerman federal and Länder governments in

theformofbasefundingwhichenablestheinstitutestowork

aheadonsolutionstoproblemsthatwillbecomerelevantto

industryandsocietyinfiveortenyears.

FraUNhOFer-geseLLschaFt FraUNhOFer grOUP micrOeLectrONics

iNNOvatiON thrOUgh cOOPeratiON

Die Fraunhofer-Gesellschaft istmit sechs Instituten und

sechs weiteren Einrichtungen in Dresden vertreten. Die

zwölfFraunhofer-Einrichtungenbeschäftigenzusammen

mehrals1.100Mitarbeiterbeieinem jährlichenUmsatz

vonüber100MioEuro.FürdienächstenJahrewirdein

weiteresWachstumprognostiziert.

NebenderaußerordentlichhohenDichteanForschungs-

einrichtungenzeichnetsichderStandortDresdendurch

eineengeVerflechtungvonIndustrieundForschungaus.

DiedarausentstehendenSpitzenleistungenund innova-

tivenEntwicklungensetzenweltweiteImpulse.

FraUNhOFer iN DresDeN:gebaLLte FOrschUNg

The Fraunhofer-Gesellschaft is represented in Dres-

denbysixinstitutesandsixotherfacilities.Morethan

1.100employeesworkforthetwelveFraunhoferfaci-

lities.Theannualturnoveramountstomorethan100

millioneuroandfurthergrowthisexpectedwithinthe

nextyears.

Inadditiontotheextraordinarilyhighdensityofresearch

facil it ies, the region is characterized by the close

connectionbetweenresearchandindustry,resultingin

the creation of leading-edge services and innovative

developmentswhichhaveaglobalimpact.

FraUNhOFer iN DresDeN:cLUstereD research

123

56

9

78

1011

4

ab

12

c

13

abc

AngewandteFestkörperphysikIAF

ElektronischeNanosystemeENAS

HochfrequenzphysikundRadartechnikFHR

IntegrierteSchaltungenIIS

IntegrierteSystemeundBauelementetechnologieIISB

MikroelektronischeSchaltungenundSystemeIMS

ModulareFestkörper-TechnologienEMFT

Nachrichtentechnik,Heinrich-Hertz-InstitutHHI

NanoelektronischeTechnologienCNT

PhotonischeMikrosystemeIPMS

SiliziumtechnologieISIT

SystemederKommunikationstechnikESK

ZuverlässigkeitundMikrointegrationIZM

Gastinstitute/GuestInstitutes

DigitaleMedientechnologieIDMT

OffeneKommunikationssystemeFOKUS

ZerstörungsfreiePrüfverfahrenIZFP

18 19

aNaLytics

FUNctiONaL eLectrONic materiaLs

FrONt-eND OF LiNe

FUNctiONaL eLectrONic materiaLs

bacK-eND OF LiNe

masKLess LithOgraPhy

Devices & iNtegratiON

cOmPeteNce areas aND research resULts

Microelectronicsisthebasictechnologyforalotoftechnicalapplications.Theprogress

intheautomobileandthecomputerindustrycanbeownedbythistechnology.Micro-

electronicsystemshavetobecomesmallerandsmallerandmoreenergyefficient.They

alsohavetoprovidemuchmorepowerandcombinemoreandmorenewfeatures.The

keyactivitiesofFraunhoferCNTfocusonthedevelopmentofinnovativeprocessesfor

high-performancetransistorsaswellasthedevelopmentofnanoelectronicintegrated

circuitstofulfillthetasksmentionedabove.FraunhoferCNTdividesitsgroupsintofive

areasofcompetences.

Seit Oktober 2009 ist das Fraunhofer CNT Mitglied

im Dresdner Fraunhofer-Cluster Nanoanalytik. Zehn

Fraunhofer-InstituteunddreiFakultätenderTechnischen

UniversitätDresdensowiedasHelmholtz-ZentrumBerlin

bündeln ihre Kompetenzen und decken das gesamte

ThemenspektrumderNanoanalytikab.DieInstitutesind

flexibel vernetzt und werden auch sehr umfassenden

AnforderungenimBereichAnalytikgerecht.

cLUster NaNOaNaLytiK

ImOktober2010wurdedasALDLabDresdengegründet.

Mit demLabwerdenKompetenzenaufdemGebietder

ALD(Atomlagenabscheidung)amStandortDresden,dem

InstitutfürHalbleiter-undMikrosystemtechnik(IHM)der

Technischen Universität Dresden (Prof. Johann Bartha)

und der ALD-Gruppe des Fraunhofer CNT (Dr. Jonas

Sundqvist) zusammengeführt. Gemeinsam entwickeln

diePartnerneueALD-Precursorenund–Prozesse fürdie

Halbleiter-undPhotovoltaik-Industrie.

aLD Lab DresDeN

SeitApril2010istdasFraunhoferCNToffiziellesMitglied

derE-Beam-Initiative.

Die Initiative bietet ein Forum für bildungs- und

verkaufsförderndeAktivitäten,unterdemGesichtspunkt

eines neuen „design-to-manufacturing“-Ansatzes,

bekannt als „design for e-beam“ (DFEB). DFEB

reduziert Maskenkosten für Halbleiterbauelemente, in

VerbindungmitDesign,Design-Software,Herstel lung,

HerstellungsmaterialienundHersteller-Software-Expertise.

e-beam-iNitiative

cLUster NaNOaNaLytiK

aLD Lab DresDeN

e-beam iNitiative

Since October 2009, Fraunhofer CNT has been a

member of the Fraunhofer-Cluster Nanoanalytics in

Dresden. Ten Fraunhofer institutes, three faculties

of the Dresden University of Technology as well

as the Helmholtz-Zentrum Berlin consolidate their

competences and thus cover the entire field of

nanoanalytics.Theinstitutesareflexiblylinkedandcan

meetcomprehensiveanalyticsrequirements.

The ALD Lab Dresdenwas founded in October 2010.

It is a joint venture of the Institut fürHalbleiter- und

Mikrosystemtechnik(IHM)oftheDresdenUniversityof

Technology(Prof.JohannBartha)andtheALDgroupof

FraunhoferCNT(Dr. JonasSundqvist)whichcombines

their competences in the field of ALD (atomic layer

deposition). The workscope is to develop new ALD

precursors and processes for the semiconductor and

photovoltaicindustry.

SinceApril2010,FraunhoferCNTisanofficialmember

ofthee-beaminitiative.

The initiative provides a forum for educational and

promotional activities considering a new “design-

to-manufacturing” approach known as “design

for e-beam” (DFEB). DFEB reduces mask costs for

semiconductor components linked to designs, design

software,manufacturing,manufacturingmaterialsand

manufacturer’ssoftwareexpertise.

iNNOvatiON thrOUgh cOOPeratiON

20 21

cOmPeteNce areaaNaLytics

The competence area Analytics concentrates on the characterization of materials

neededforthefabricationofmodernsemiconductorchips.Itfocusesontopicssuchas

the distribution and activity of dopants, properties of surfaces and interfaces,

crystallization and phase formation, lateral resolved stress measurements and

quantificationofimpurities.Inordertomeetthechallengesofongoingminiaturization,

weengageintheimprovementofexistingmethodsandalsointheapplicationofnew

methods,e.g.atomprobetomography.

cOmPeteNces

GroupManager

Analytics

Dr.LutzWilde

Phone:+493512607-3020

lutz.wilde@cnt.fraunhofer.de

sONOs stacks for non-volatile memory applications

WehaveusedAPTtoanalyzeSONOS(Silicon-Oxide-Nitride-

Oxide-Silicon)basednon-volatilememorycellswithinthe

publicallyfundedprojectCoolAnalytics,whichstartedin

April2011.Theprojectaimstounderstandtheinfluenceof

thedistributionofelementswithinthechargetrappinglayer

ontherelevantelectricalpropertieslikechargeretention,

reliabilityandprogrammingvoltageinordertooptimizethe

manufacturingprocess.

Asthenon-volatilememorycellsunderinvestigationaretwo-

dimensionalstructuresandweareeventuallyinterestedto

determinetheconcentrationofsilicon,nitrogenandoxygen

intwodimensionsaswell,weneedananalysismethodthat

provideshighspatialresolutionandagoodsensitivity.APT

isthemostpromisingmethodforextractingthesekindof

information.Themajordifficultyintheseanalysesisthemass

overlapofSi2+andN+atmass14andSi+andN2+atmass28

respectively.Wehavetorefertostatisticalmethodsthat

separatetheelementsbasedontheirisotopicdistributionin

ordertosolvethischallenge.

InitialAPTresultsfromgatestacksforSONOSdevicesare

showninFig.1andFig.2.Fig.1demonstratesthatwecan

analyzethestackofisolatingmaterialswithAPTandclearly

resolveeachlayer.Asisolatinglayersarenotoriouslydifficult

toanalyzethisisamajorstepintheproject.Thedepthprofile

inFig.1showsthethicktopoxide,thethinbottomoxide

andtheintermediateoxy-nitridecontaining5%nitrogen.

Unfortunately,theoxygenquantificationintheSiO2layersdo

notshowtheexpected66%oxygen.Thisresultislikelytobe

causedbyacombinationout-gassingofoxygenduringthe

analysisandreconstructionartifacts..Theanalysishowever

revealsadiffusionofnitrogenintothetopoxideandastrong

accumulationofarsenicattheinterfacebetweenthePoly-Si

electrodeandthetopoxidelayer.Additionally,arsenicis

enrichedatgrainboundariesinthePoly-Sicoveringthegate

stack(Fig.2).

Precipitation hardened steels

Thehardeningofsteelbytheprecipitationofnano-scaled

particlesisacommonmethodinsteelmetallurgy.APTis

anidealmethodtostudytheseprecipitationphenomenain

detail.TogetherwithFraunhoferIWS(Dr.JörgKasparand

Dr.JörgBretschneider)wehaveinvestigatedthemartensitic

stainlesssteelX5CrNiCuNb16-4hardenedbyCuprecipitates

formedduringatwo-stepagingprocess.

APTrevealstheelementalcomposition,size,distributionand

densityoftheCuprecipitates.Thesizeoftheprecipitateswas

intherangeof2-6nmdiameter.Theprecipitatedensitywas

foundtobe0.0015nm-3,whichmeans,thatoneprecipitate

canbefoundwithinacubeofapproximately8.7nmlength.

atOm PrObe tOmOgraPhy

1 Depth profile of a SONOS layer stack showing the distribution of

the main constituents.

treNDs

In2011FraunhoferCNTcontinueditsworkonatomprobetomography(APT)inco-operation

withexternalpartnersfromtheindustryandacademicresearchinstitutions.

TogetherwithourlocalacademicpartnersfromtheHelmholtz-ZentrumDresden-Rossendorf,

theTUDresdenandtheLeibniz-InstituteforSolidStateandMaterialsResearchDresdenwe

successfullyestablishedtheAdvancedAtomProbeLabandstudiedawiderangeofmaterials

likemetallicglasses,ODShardenedsteelsorpnictidebasedsuperconductingthinfilms.

TogetherwithourindustrialpartnersfromGLOBALFOUNDRIESandX-Fabwearehavebeen

workingonthecharacterizationofultrathinoxidebasedfilmsusedinhigh-Kmetalgatestack

forhighperformancetransistorsandSONOS(Silicon-Oxide-Nitride-Oxide-Silicon)basednon-

volatilememoriesintheframeworkoftwopublicallyfundedprojects.

Finally,anumberofsmallerprojectshavebeencarriedoutinco-operationwithseveralpartners

fromindustrialandacademicinstitutionsthatincludedamongstothersthecharacterizationof

gallium-arsenidebasedmaterialsforopticalapplicationsandmaterialsforsolarapplications.

22 23

aNaLytics

Theresultsclearlyshow,thattheprecipitatesareenriched

inCuandNiwhereasFeandCraredepletedcomparedto

thematrixcomposition.Thevicinityoftheprecipitatesis

depletedinCu(Cudiffusionzone).Aconcentrationprofilefor

constituentelementsascalculatedfromaveragingover300

precipitatesisshowninFig3.The3Dspatialdistributionof

CuprecipitatesinthematrixisshowninFig.4.Furthermore,

thespatialdistributionmicrographobtainedusingatomprobe

tomographyreveals,thatcarbonisenrichedatanarch-like

grainboundary(Fig.5).

Superconducting thin films

In2008anewclassofhigh-temperaturesuperconductorshas

beendiscoveredinlayeredironarseniccompounds.Theyare

extremetypeIIsuperconductors(similartothecuprates)of

multibandnature(similartoMgB2).Sincetheirdiscoverythin

filmsoftheintermetalliccobalt-dopedBaFe2As2(Ba-122)pha-

seweresynthesizedbypulsedlaserdeposition.Theepitaxial

growthofthiscompoundonbccironoffersthepossibilityto

growFe/Ba(Fe1-xCox)2As2multilayersthatpossessmagnetically

influencedsuperconductingandtransportproperties.This

layerstackhasbeenanalysedbyAPTinco-operationwithDr.

SilviaHaindlandJanEngelmannfromIFWDresden.

Inordertofabricatesuchmultilayersforelectronicapplications

likeJosephsonjunctionsadetailedunderstandingofits

microstructureisneeded.Theinvestigatedmultilayerwas

grownbypulsedlaserdepositionunderultrahighvacuum

conditionsonMgAl2O4substrates.First,anironbufferlayer

wasdepositedatroomtemperatureandsubsequentlyheated

upto700°Ctoachieveaclosedironlayerwithsmoothinter-

faces.TheBa-122layerwasgrownatthesametemperature.

Aftercoolingdowntoroomtemperatureanapproximately

5nmthickironinterlayerwasdepositedandagainheated

up.Finally,asecondBa-122layerwasdepositedat700°C.

EpitaxialfilmgrowthwasconfirmedbyX-rayanalysis.TheFe/

Ba-122stackissuperconductinguptoatemperatureof22K.

APTresultsshowsmallscaleinhomogeneitiesofthebarium,

iron,arsenic,andcobaltdistributionintheBa-122film(Fig.6).

TheanalysedsamplesrevealedaCodopantgradientalongthe

filmthicknessaswellasBa-andFe-richregions.Theoxygen

contaminationwasfoundtobestrongestontheFelayers.

2 SEM image of a ready-to-run tip including the ROI (left) and 2d

projection of 3D atomic maps of the SONOS stack (middle and right)

showing enrichment of arsenic at the grain boundaries and at the

top oxide.

Matrix|Cudiffusionzone|Cuppt

3 Concentration profile calculated from a proximity histogram aver-

aged over 300 precipitates

z(195nm)

4 3D spatial distributions of the Cu precipitates in the steel matrix

x

y

5 Carbon enrichment at an arch-like grain boundary

6 Distribution of the iron concentration in the layer stack (left side) and iso-concentration surfaces of iron, arsenic, co-

balt, barium and oxygen showing inhomogeneities in the Ba-122 layer

53% Fe i sosurface

18% As i sosurface

11% Co i sosurface

35% Ba i sosurface

4% O i sosurface

24 25

aNaLytics

traNsmissiON eLectrON micrOscOPyAtFraunhoferCNT,theALDprocessdevelopmentandthe

evaluationofnewALDprecursorsforthedepositionof

dielectricsisoneofthecorecompetences.TEMinvestigations

ofthestepcoverageofanewprecursorforthedepositionof

Si3N4intoateststructurewithhigh-aspectratiotrencheshave

beencarriedouttosupporttheseactivities.Inordertoreduce

preparationartefactsduringFIBpreparation,thetrenches

werefilledbyaspecialresin,whichshowsthegrainystructure

inthehighresolutionimages(Fig.7&8).TheALDdeposited

Si3N4appearsinmiddlegray.Theanalysisofthelayerthickness

atthetopandatthebottomshowsexcellentstepcoverageof

betterthan80%(Fig.7).AEDXlinescanovertheSi3N4layer

reveals,thattheSi3N4layerisoxidizedatthesurface(Fig.8).

7 Analysis of the step coverage of an ALD grown Si3N4 layer by TEM

(left side: overview image; right side: top and bottom details)

8 EDX line scan over ALD grown Si3N4 layer (left side: red bar shows position of EDX scan; right side: EDX results)

X-ray DiFFractiONWecontinuedwithoursuccessfulco-operationonthecharacterizationoforganicthinfilmswithChristophSchünemannand

ChrisElschnerfromTUDresden,InstituteforAppliedPhotophysics(IAPP).Thesefilmshavepotentialapplicationsinthefield

oforganicelectronics.Especially,wefocusedontheinfluenceofthedepositiontemperatureandthemixingratioonthephase

separationandlayermorphologyinblendlayersofC60andZinc-phtalocyanide(ZnPc)whichmaybeusedasphotoactivelayer

inorganicsolarcells.Duetothelowlayerthicknessof150nmorless,themeasurementsneedtobecarriedoutingrazing

incidencegeometry.AcomparisontostandardBragg-BrentanogeometryisshowninFig.9.Whileinthegrazingincidence

modethereflectionsfromtheC60filmareclearlyvisible,inspecularBragg-Brentanogeometryonlythebroadhumpfromthe

glasssubstrateisvisible.Bothmoleculeshaveadifferentshape,asshownintheinsetofFig.9a,leadingtotheformationof

separatedC60andZnPcdomains.EnhancedphaseseparationwasobservedforhigherC60contentsandforhighergrowth

temperaturesresultinginimprovedchargecarrierpercolationpathsandthereforeimprovedsolarcellperformance.TheGIXRD

measurementclearlyindicatesthatevenforhighZnPccontentwithintheblend,ZnPcisnotabletocrystallize,evenforelevated

substratetemperaturesof140°C(Fig.9).

9 GIXRD scans of pristine C60 and

ZnPc films (left)

GIXRD scans of heated blend layers

with different ZnPc:C60 ratio (right)

tOF-simsThedepositionof5nmthinTaCNfilmsfromtetramethyldisilazane(TDMS)andTaF5precursorsonSisubstratebyanALD

processwasstudiedbyToF-SIMSmeasurements.Thesefilmsareusedasetchstoplayersinthereplacementgatetechnologyfor

thesub-28nmnode.TheToF-SIMSmeasurementsareperformedtodeterminetheinfluenceofthedepositiontemperatureand

thetemperatureofasubsequentpostdepositionanneal(PDA)onthecarbonandfluorineconcentrationwithinthefilm.From

themeasurementsitisobvious,thatthePDAtemperaturehasasignificantlyhigherinfluenceonthefluorinecontamination

withinthefilmthanthedepositiontemperature(Fig.10).ThedecreasingfluorineconcentrationuponhigherPDAtemperature

canbeattributedtooutgassingoffluorine.Otherwise,thecarboncontentisalmostindependentofthePDAtemperaturebut

showsasignificantdependenceonthedepositiontemperatureasshowninFig.11.TheN/Cratio(Nnotshownhere)increases

withincreasingtemperatureofdepositionduetothegrowthbehavioroftheALDprecursors.

10 Depth profile of the fluorine intensity in dependence of PDA

and deposition temperature

11 Depth profile of the carbon intensity in dependence of PDA

and deposition temperature

26 27

FUNctiONaL eLectrONic materiaLsFrONt-eND OF LiNe

Objectiveofthisresearchareaisthedevelopmentofinsulating,semi-insulatingandconductive

thinfilms.Thesematerialsaresuitableforvariousapplicationsinmicro-andnanoelectronics.

OneofthecorecompetenciesofthegroupistheAtomicLayerDeposition(ALD)ofdielectric

andconductivelayerson300mmsiliconwafers.ThebroadspectrumofALDresearchactivities

coversdifferenttechnicalareas:ALDprecursortesting,hardwareandequipmentevaluation

aswellasmaterialandprocessdevelopmentforhigh-volumemanufacturing.FraunhoferCNT

worksinclosecollaborationwithindustrialandacademicpartners.Hence,theDresdenALD

communityestablishedthe„ALDLabDresden“asacommonplatforminfall2010.

cOmPeteNces

ThefocusofourR&Dactivitiesarehigh-k/metalgate(HKMG)stacksforcominggenerations

offieldeffecttransistors(FET)andhigh-kdielectricsandelectrodesfornon-volatilememories

(NVM)andMIM-basedcapacitors.Inthefieldofferroelectricmemories(FeFET)Fraunhofer

CNTmadeasignificantcontributionthroughtheengineeringofferroelectrichafniumoxide

(HfO2)creatingthe“mostaggressivelyscaled”FeFETsusingferroelectricSi:HfO2ina28nm

HKMGstack(TiN/Si:HfO2/SiO2/Si).FullyfunctionalFeFETscouldbefabricatedfulfillingcurrent

Flashspecificationintermsofdataretentionandendurance,butwithmuchlowerpower

consumptionandDRAM-likewrite/erasespeed.MIMcapacitorsareusedinstand-aloneand

embeddedDRAMandasintegratedpassivedevicesforRFCMOS.In2011,weoptimizedthe

interfacesintheMIMstacktofurtherimprovethelinearityoftheTiN/ZrO2-basedcapacitors.

Inaddition,wedevelopedalowcosttantalumcarbonitride(TaCN)ALDprocessonalarge

batchfurnace.BesidetheusageintheReplacementGatetransistortechnologythisprocesscan

beusedalsoformemoryapplicationsinhigh-volumemanufacturing(e.g.MONOSFlash)and

heaterelectrodesforphasechangememory(PCRAM).

treNDs

Sinceitsreleaseintheearly1950'sthetransistorhasunder-

goneacontinuousscalingprocess.Therecentproblemof

leakagecurrentthroughtheevershrinkingsilicondioxidegate

dielectricwastackledwiththeintroductionofnewhigh-k

dielectricmaterialssuchashafniumdioxidetogetherwith

metalgateelectrodematerialssuchasmetalnitrides.

UsingtheReplacementGatetechnology,metalnitridesare

depositedbyALD,asthesmallfeaturesizesrequireconformal

filmgrowth.ForfurtherstructuringofpFETandnFET,anetch

stoplayerisrequiredwithinthemetalgatefilmstack.

Thedepositionofatantalumnitridebasedetchstoplayerand

diffusionbarriervia300mmbatchfurnaceALDwasdevelo-

pedatFraunhoferCNT.Thefilmshowedahighgrowthrate

andveryconformalgrowthwithverylittlesurfaceroughness.

Thoroughmaterialcharacterizationconfirmedetch-stopand

diffusionbarrierpropertiesofthedepositedTaCNfilms,as

requiredforfilmintheReplacementGateprocessflow.

TogetherwiththeprocessoftitaniumnitrideALD,abatch

furnacein-situprocesswasthendevelopedforthedeposition

ofacompleteTiN-TaN-TiNmetalgatestackfortheintegration

intothereplacementgateprocessflow.Thein-situdeposition

enableswellcontrolledinterfacetreatmentsinbetweenthe

metalfilms,aswellasalowcostofownershipduetothehigh

throughputofthebatchfurnace.ThisALDprocessenables

furthertransistorscalingbelowthe28nmnodeforfuture

ReplacementGateapplications.

1 The ALD cycle of a metal oxide deposition is composed of the following steps: metal-containing

precursor pulse (step 1), purge of non-reacted precursor and reaction products with inert gas (step

2), oxidant pulse e.g. ozone or water (step 3) and a second inert gas purge to remove reaction pro-

ducts (step 4). The sequence is repeated several times to achieve the desired film thickness.

GroupManagerFunctionalElectronic

Materials-FrontEndofLine(FEoL):

Dr.MalteCzernohorsky

Phone:+493512607-3032

malte.czernohorsky@cnt.fraunhofer.de metaL NitriDes

2 HRTEM of a TiN-TaCN-TiN metal gate film stack deposited in-situ

via ALD on the ASM A412 large batch furnace (red: TiN, blue: TaN).

3 Replacement Gate Stack schematic: TiN Wf - workfunction layer

to control gate work function, TaCN - etch-stop and diffusion-barrier

layer, TiN cap - capping layer to control interface to gate dielectric

28 29

FUNctiONaL eLectrONic materiaLs - FrONt-eND OF LiNe

Microelectronicsanddatastoragetechnologiesinparticular,

arestronglydependentontheever-progressingstrivetosmal-

lerfeaturesizes.Onlythenthecostsavingsinmassproduction

areachievednecessarytoremaincompetitiveinamarketof

rapidlyincreasingstoragedensity.Thus,inanalogytotheag-

gressivescalingoflogictransistors,thedevicedensityperunit

areaofthehigh-volumesegmentsSRAM,DRAMandFLASH

continuouslyincreaseswitheachnewtechnologyintroduced.

Nevertheless,despitetheirhighscalabilitythoseconventional

technologiesareinmanyaspectsinferiortonew,innovative

storeconcepts.Thediversificationofstorageapplications

(mobility,cloudcomputing,longtermstorage,etc.)makes

roomfornewstoragetechnologies,generallysummarizedas

“emergingmemories”.

Theindividualcombinationofmemorypropertieswithrespect

tononvolatility,speed,powerconsumption,enduranceand

scalabilitygivesconceptssuchasSTT-MRAM(magneticRAM),

RRAM(resistiveRAM),PCRAM(phasechangeRAM)andFRAM

(ferroelectricRAM)aclearedgeovertheaforementionedmass

memories.However,regardingpowerconsumptionduring

switchingoperationtheFRAM,eveninthefieldofemerging

memories,hastobeaccentuated.Especiallyinthecaseof1T

FRAM(ferroelectricfieldeffecttransistorFeFET)theswitching

processislimitedtoasimplefield-effectwhosepower

consumptioninrelationtothecurrent-drivenswitchinginthe

STT-MRAM,RRAMandPCRAMhasavanishinglylowenergy

consumption.

Thesuccessfulintegrationofsuchanenergy-efficient

storagedeviceintoindustrialproduction,however,hadbeen

considerablymoredifficultthanexpectedandwaslimited

FerrOeLectric FieLD eFFect traNsistOrs FOr FUtUre memOries

bytheavailableofintegratedferroelectricmaterials.Already

knownferroelectricssuchaslead-zirconat-titanate(PZT)or

strontium-bismut-tantalate(SBT)lackbackendofline(BEOL)

stability,fullCMOScompatibilityandsufferfromahigh

1 Conventionalized gate structure of a HfO2-based fer-

roelectric field effect transistor.

physical-layerthickness(lowcoercivefields,highdielectric

constant)thatonlywithconsiderableeffortcanbeintegrated

intoaconventionalprocessflow.However,withthesuccessful

stabilizationofferroelectricityinHfO2,amaterialsystem

alreadywell-knowntomicroelectronicengineering,anew

approachandtherewithanewperspectiveforhighlyscaled,

ferroelectricmemorieshasbeendemonstrated.Scientistof

theFraunhoferCNThaveidentifiedseveralstrategiestoform

ferroelectricHfO2andinthecourseoftheprojectsMERLINand

HEIKOdevelopedlargeexpertiseindepositing,structuringand

characterizingthosenovelferroelectricmaterials.

Currentlytheintegrationofanactualmemorydevicebasedon

anHfO2basedferroelectricfieldeffecttransistorhasreached

afinalstage.Incooperationwithourlongtermpartners

GLOBALFOUNDRIESandNamlabgGmbHfullyfunctional

ferroelectricfieldeffecttransistorsonastateoftheart28nm

groundrulehavebeendemonstrated.

Figure2depictsTEMcrosssectionsofthegatestackof

anearlierbutcomparableferroelectricdevice,aswellasa

ferroelectricMIMcapacitorusedforprocessqualificationand

ferroelectricparameterextraction.Basicdeviceoperationwas

statisticallyverifiedandisrepresentativelydepictedinFigure3a.

EndurancecomparabletocurrentFlashtechnologiesaswellas

dataretentionexceeding10yearswasfurtherdemonstrated.

Additionally,outstandingswitchingtimesbelow20nswere

achievedascanbeseeninthetimeandfielddependent

memorywindowmatrixinFigure3b.Insummarythispredicts

afast,highlyscaled,non-volatilememoryconceptbasedon

ahighlyengineered,ferroelectricHfO2.Incurrentandfuture

2 TEM cross section of a HfO2-based ferrolectric field effect transis-

tor and a metal-ferroelectric-metal capacitor.

3 Basic device operation of a ferroelectric field effect transistor (a).

Time and field dependence of ferroelectric switching and its impact

on memory window evolution.

projectsa100bitdemonstratorwillbefabricatedrepresenting

thefinalstepinputtingthenewlydiscoveredferroelectric

propertiesofHfO2toausefulapplicationinindustrialscale.

30 31

FUNctiONaL eLectrONic materiaLs - FrONt-eND OF LiNe

ZrO2isofveryhighinterestinsemiconductorindustrymainly

ashigh-kdielectricinDRAM,eDRAMorevenresistiveRAM.

Aboveall,noalternativematerialsareinsightforthenext

generationsofDRAM.Thus,furtherimprovingofdeposition

processes,ofmaterialpropertiesandofintegrationschemes

isessentialtomeetthestrictrequirementsoffuturedevices.

Onekeychallengeisreducingtheprocesstimeofthebottle

neckhigh-kALDdeposition.Themostcommonprocessused

forZrO2depositionisTEMAZ/O3withapublishedgrowthrate

of1Å/cycle.Thereby,theO3processcausesoxidationofthe

TiNbottomelectrodesresultinginMIMcapacitorasymmetries

andcapacitancelinearityissues.AttheFraunhoferCNT,we

improvedtheTEMAZ/O3ALDprocessandstudiedthegrowth

andcrystallizationbehaviorofthinZrO2films.Agrowth

rateof1.8Å/cycleupto2.7Å/cyclecouldbeachievedby

increasingtheTEMAZandtheO3pulsetimes(Figure1).Linear

growthandgooduniformityon300mmwaferscouldbe

provedforanALDwindowupto270°Cwhichiscomparable

topublishedTEMAZ/O3processes.Theincreaseofthegrowth

ratecorrelatestothecrystallizationoftheZrO2filmsduring

depositionstartingatacriticalfilmthickness.Besidesthefast

growthratethedepositedZrO2layersshowverygoodelectri-

calperformancewithaCETof0.7nmandaleakagecurrent

of2.6•10-9A/cm2at-1Vfora7nmthickcrystallinefilm.

Additionally,thenewZrO2ALDprocesswasusedtooptimize

theintegrationschemeofMIMcapacitorswithTiNelectrodes

addressingthebottominterfacebetweenZrO2andTiN.Ina

firststep,theTiNsurfacewasstudiedindetailafteranHF-Dip

byXPSandRsmeasurementstoimplementatimecoupling

betweenTiNandZrO2deposition.Interestingly,thenative

TiO2canbereducedbutneverremovedcompletely.Ina

secondstep,theinfluenceoftheO3oxidationwasminimized

byseveralprocessvariationsincludinglowerO3pulsetimes

orskippingtheO3pulseonlyforthefirstcyclesoftheALD

deposition.AR-XPSandToF-SIMSdepthprofilesshowa

significantdecreaseoftheTiO2betweenZrO2andTiNbyusing

anHF-Dip.ThisreductionisintensifiedbytheZrO2process

withoutO3whichisvisiblebythedecreaseoftheTiO-ionat

theinterfacebetweenZrO2andTiNinFigure2.

high-K materiaLs FOr mim caPacitOrs

1 Linear growth of ZrO2 from a new TEMAZ/O3 process at different

deposition temperatures.

2 ToF-SIMS depth profile of the interface between ZrO2 and TiN

after different interface treatements.

cleanroom at Fraunhofer CNT

32 33

FUNctiONaL eLectrONic materiaLs - bacK-eND OF LiNe

15yearsago,aremarkablestepwastakenbyimplementingcopperasmetallizationmaterial

inthefabricationofintegratedcircuits(ICs).Itwasnotonlythechangeofmaterialfrom

aluminumtocopperbutratherthewholeintegrationscheme,changingfromthesubtractive

structuringmethodtothedamasceneprocess,thatchallengedengineersandscientists.How-

ever,especiallytheintegrationofnewprocesseslikeCMP(chemical-mechanicalplanarization)

andthedevelopmentofnewmaterialcombinationsprovedthesuperiorityofcopperagainst

aluminummetallization.

Intheearlyyearsofchipmanufacturing,thetransistorsizedeterminedtheprocessorclock

rate.Adecreasedgatelengthallowedashorterswitchingtime,whichmadetheprocessors

fasterandfaster.However,asideeffectofshrinkinggatelengthsisthattheareaavailable

forelectricalcontactingisreducedaswell.Thewiresaswellasthespacesbetweenthemget

smallerandreachthedimensionofactualcoppergrainsizes,leadingtoanon-linearresistivity

increaseaswellasincreasedcapacitanceeffects.Thatmeans,nowadays,thesignalpropagation

ratethroughtheelectricalwireslimitstheprocessorclockrate,sinceitpassedthetransistor

switchingtimedelay(Figure1).Thus,themaintaskforresearchanddevelopmentintheback-

endoflineistominimizetheRCdelay.Thisisaddressedthroughalldifferentprocessesinthe

back-endoflinemoduleattheFraunhoferCNT.

cOmPeteNces

GroupManager

FunctionalElectronicMaterials-

BackEndofLine(BEoL):

Dr.RomyLiske

Phone:+493512607-3040

romy.liske@cnt.fraunhofer.de

ThecapacitanceCcanbedecreasedbyusinglow-kmaterials

asdielectrics.Besideschangingthematerialtype,porosity

canbeintroducedtofurtherdecreasethek-value.However,a

porousmaterialincreasestheintegrationcomplexity,because

allconnectedprocessesneedtobetunedastominimize

thedamageoftheporousmaterialitselfandthek-value

degradation.Furthermorethemechanicalstrengthofporous

low-kmaterialcanbechallenging.

AttheFraunhoferCNTresearchfocushasbeenputonthesi-

dewalldamageofthelow-kduetotheRIEetch,theinfluence

ofwetcleanprocessesafterdryetchingandthepossibilitiesof

restoringk-valuesthroughrepairprocesses.Forthefutureitis

intendedtoinvestigatetheinfluenceofCMPprocessesonthe

k-value.

TheresistivityRdependsonthematerialsusedformetalli-

zationandtheirmicrostructure.State-of-the-artmaterialfor

leadingedgeinterconnecttechnologyremainscopper.Its

specificresistivityislow(1.7µΩcm)andelectro-andstress

migrationaresufficient.However,copperneedsanefficient

barriertopreventitfromdiffusionintotheinterlayerdielectric

andtopreventitfromoxidation.Itistheaimofinterconnect

integrationtouseasmuchcopperforthecircuitaspossible

forperformanceandaslittlebarrierasabsolutelyneededfor

reliability.Asthecross-sectionofconnectsforleadingedge

technologynodesisintheorderofcoppergrainsizesandthe

barrierusesasignificantareafraction,barriermaterialreduc-

tionandvoid-freecopperfillingwithoptimizedmicrostructure

isdemanded.

ThusattheFraunhoferCNTfocusisonthedevelopment

ofnewCVD-depositedbarriermaterials,thatallowathin

andconformaldepositionwithgoodsidewallcoverage.

Preferably,thesebarriershavevalueaddedpropertieslike

goodconductancetoomitaseedlayerforcopperdeposition,

which,togetherwithavoid-freecoppersuperfillingbyelectro-

chemicaldeposition,leadstoabettercoppermicrostructure

andthusfasterandmorereliablecircuits.Theroleofthebath

additivesinelectrochemicalplating,whichareresponsible

forsuperfilling,issubjectofresearchattheFraunhoferCNT.

Furthermoretheinfluenceoftheannealingregimeonthe

coppermicrostructurecanbestudied.

Inthenearfutureprocessdevelopmentinthefieldofchemi-

cal-mechanicalplanarizationininterconnecttechnologycan

becarriedout.Topicsofinterestwillcoverpolishingofnew

barriermaterialswithlowdamagestoponlow-kdielectrics.

Theback-endoflineprocessflowisshowninFigure2.

LeadingedgeresearchintheFraunhoferCNTcoversULKetch,

clean,barrierandseeddeposition,copperplatingandCMP.

1 RC delay influence of front-end of line transistor and back-end

of line interconnects. Effect of change to copper and low-k. From:

Bohr; „Interconnect Scaling – The Real Limiter to High Performance

ULSI“; Proceedings of the 1995, IEEE International Electron Devices

Meeting.

2 Dual damascene process

flow in the back-end of

line.

1: ULK and hardmask

deposition,

2: lithography, etch and

cleaning,

3: barrier and seed layer

deposition,

4: copper plating and

anneal,

5: copper and barrier CMP.

34 35

3 Retention of ultra-low-K structural properties by optimized etch process.

FUNctiONaL eLectrONic materiaLs - bacK-eND OF LiNe

ThroughourclosecooperationwithGlobalfoundriesandour

equipment(300mmindustrystandard)acompleteback-end

oflineintegrationispossible.Processedwaferscanbesend

backtoGlobalfoundriesforfurtherprocessingorforthe

measurementofelectricaldata,whichprovidetheultimate

benchmarkforrefinedornewlydevelopedprocesses.

UlK clean – Removing Etch Residues

Afteretchingviasandtrenches,thenextstepisusuallyawet

clean.Residuesfromhardmasks,remainingresistorfluorine

polymersformedonthesidewallshavetoberemovedto

enableacleanandconformaldepositionofthebarriers

afterwards.

Severaldifferentcleaningchemicals,waterorsolventbased

areevaluatedwithspecialemphasizeoncompatibilitywith

theULKmaterial,copperandthebarrierlayers.Sincethe

structuresgetsmallerandsmaller,goodsurfacewetability

hastobeassured.Addingsurfactantsandoptimizingprocess

parametersforchemistryapplicationandrinsingstepscan

improvetheoverallperformanceoftheULKcleaningstep.

UlK Repair – Restoring the k-value

Thoughtheetchprocesscanbeoptimizedtoresultin

minimaldamageoftheULKmaterial,itmaynotbepossible

tocompletelykeepthepristinestructureofthedielectric.The

aforementionedcarbondepletionandwateradsorptioncan

befacedbychemicalsylilationrepairprocesses.Herepolar

hydroxylgroupsaresubstitutedbymethylgroupsandthe

originalULKstructureandthusthek-valuecanberestored.

Similartothecleaningstepdifferentrepairchemicalscanbe

screenedtofindtheoptimalprocessparameters.Additional

preannealingtoremoveadsorbedwaterandpostcuringby

UVaswellasIRradiationtoremoveunboundfragmentsand

topromotecrosslinkingcanbeused.

2 Improvement of leakage current by low-k repair.

UlK characterization – Observing material changes

FurthermoretherearemultipleoptionsforadvancedULKana-

lytics.Auniquetoolisellipsometricporosimetrywhichenables

poresizeandporositymeasurements.Additionalinformation

abouttheYoung’smodulusordiffusionbarrierintegritycan

alsobeobtained.ViadifferentTEMoptionslikeEELSorEDX

thecarbonlossintheULKmaterialwhichisassociatedwith

plasmadamagecanbemeasured.FinallybyFTIRthecharacter

ofthechemicalbondsintheULKmaterialcanbeidentified.

Byoptimizingexisting'bestknownmethods'(BKMs)recipes

animprovementfortheetchingoftheULKlayerscanbe

achieved.TheoptimizedprocessesyieldULKfilmswitha

structuremuchmoresimilartothepristineone,intermsof

poresizeorporosity,whilemaintainingacomparableetch

rate(Figure3).

Viasandtrenchesinthedielectricareformedbyreactiveion

etching.Thecomplexetchingprocessprovestobeespecially

challengingforlow-kandultra-low-kmaterials.

Thesenewdielectricsintroducecarbontolowerthepolariz-

abilityandthusthekvaluedownfrom4(traditionallyused

SiO2)toabout2.7forlow-kmaterials.Byaddingpores,theso

calledultra-low-k(ULK)materialsachievekvaluesaslowas2.

However,low-kmaterialscomewithseveralintegrationchal-

lenges,especiallyfortheetchingandresistashingprocesses,

whichcausedamagesinthemicrostructureandalterthe

materialsproperties.Challengesare:

•ProfileandCDcontrol

•Changeofdielectricpropertiesbyplasmainduced

damageleadingtoincreasedkvalue,whichimpacts

theelectricalperformance

•Porediffusion,moistureuptake,metalbarrier

precursordiffusion

•Sidewallandbottomsurfaceroughness

• Maskintegration

oMetallichardmasks:wiggling,µ-masking,metallic

residues

oOrganicresists:ashing,resistpoisoning

Plasmadamagecanbedividedintotwomechanisms.Thephy-

sicaldamageresultsfromionbombardmentintheplasma.In

lowdensityporouslow-kmaterialsthisleadstoadensification

andhencetoashrinkageandanincreaseinthek-value.

Thechemicaleffectplaysamoreimportantroleinthetrench

sidewalls.Here,themethylgroupsoftheULKmaterial(which

areresponsibleforthelowerk-value)canberemovedbythe

speciesintheplasma.Thisleadstodanglingbondsorforma-

tionofhydroxylgroupsatthesurface.Theresultisamuch

morepolarsurfacewhichleadstoamuchhigherprobability

ofwateradsorption.Withtheadsorbedwater(k-valueof80!)

theeffectivekoftheULKmaterialrises.Additionalproblems

arisewhenthedamagedULKmaterialisexposedtothe

subsequentcleaningstep.BecausedamagedULKischemically

similartosilicondioxide,thecleaningstepbyhydrofluoric

acidattacksthealtereddielectric.Thismaterialremovalcan

causeissueslikehardmaskundercutsorCDlossandfurther

difficultieswiththebarrierlayerdepositionafterwards.

DuringanextensiveprojecttogetherwithGlobalfoundries

detailsaboutthedamagingoftheULKmaterialbytheetch

processareinvestigated.Severaladvancedplasmadiagnostics

areavailablelikehigh-resolutionopticalemissionspectrosco-

py,quadrupolemassspectroscopyandquantumcascade

laserabsorptionspectroscopy.Usingthesemethodshelps

tounderstandthedetailsoftheprocesses,e.g.bydetecting

plasmaspeciesintheexcitedstateandinthegroundstate.

UlK Etch – structuring of the Patterns

1 Damage mechanisms during ultra-low-K etching.

iNtegratiON OF ULK-PerFOrmaNce

36 37

FUNctiONaL eLectrONic materiaLs - bacK-eND OF LiNe

cOPPer DiFFUsiON barriers scaLiNgThetransitiontotheCu/ULKnodeinducedaneedforthe

developmentofnoveldiffusionbarrierspreventingthe

intermixingofcopperwiththeadjacentdielectriclayerand

otherregionsonthechip.Theyshouldbecompatiblewith

currentintegratedcircuitfabricationflows.Atthesametime

thematerialusedneedstobethermalandstructuralstable

andalsohighlythermallyandelectricallyconductive.

Thepresentstate-of-the-artbarrier/adhesionpromoterusedin

theback-endoflineisaTa/TaNfilmstack.However,despiteits

excellentbarrierproperties,thismaterialcombinationhasalso

somelimitations.Oneofthemisgivenbythefactthatboth,

theTaandTaNaredepositedbyphysicalvapordeposition

(PVD).Thisdepositiontechniquedoesnotcomplywiththe

stringentstepcoveragerequirementsforfeatureshaving

criticaldimensions.Furthermore,thecopperplatingcannot

beconducteddirectontheTalayer.Firstaseedlayerhasto

bedeposited.Bythiswaythetrenchfractionthatisfilled

withbulkcopperisreducedandtheresistivityofthewhole

interconnectstructureincreases.

ToovercometheselimitationsFraunhoferCNTandGLOBAL-

FOUNDRIEShavejointtheireffortstoenablechemicalvapor

deposited(CVD)cobaltasthediffusionbarrierofchoice

forsub28nmtechnologynodes,seeFigures1and2for

topographymeasurementsbyAFMandaTEMcrosssection,

respectively.ComparedtoTaithasamuchlowerelectrical

resistivityandhigherthermalconductivity,butthegreatest

benefitofintroducingCoasabarriermaterialisgivenbythe

fact,thatitcanbedepositedbyCVDandtheCuplatingcan

beconducteddirectlyonitssurface.

Inthiswaythestepcoverageofstructureswithcritical

dimensionscanbeimprovedandthetrenchfractionfilledwith

bulkcopper,thustheelectricalconductivityoftheconductor

pathcanbeincreased.

ForprocessdevelopmentandoptimizationFraunhoferCNT

usesastate-of-the-artAMATEndura2toolhavingDegas,PVD

Ta/TaN,PVDCuRFXandCVDCochambers.Oneadditional

advantageisgivenbytheinsituXPSmeasurementsystem

enablingchemicalanalysisofthedepositedthinfilmlayers

withoutbreakingtheprocessvacuum.Theimportanceofin

situXPSisshowninFigure3:exposuretoairduringexsitu

measurementsleadstoarapidoxidationoftheCosurface.

1A AFM measurement of a 7.5 nm thick cobalt layer.

3 In situ and ex situ XPS measurement of a cobalt layer.

siOx-cover

co

taN

tEOs

1B AFM measurement of a 7.5 nm thick cobalt layer

2 TEM of a Co layer deposited on TaN.

38 39

FUNctiONaL eLectrONic materiaLs - bacK-eND OF LiNe

FrOm POLishiNg tO high PerFOrmaNce PLaNarizatiONAsthesizeofmodernintegratedcircuitscontinuestoshrink,

theplanarityofstructuresafterCMPbecomesmoreandmore

important.Asaresult,abetterunderstandingoftherelevant

mechanismsaffectingplanarizationisneededinordertomeet

futureprocessspecifications.

Theplanarizationofapatternedwaferischaracterizedbythe

interactionofnumerousvariablessuchasappliedpressure,

relativevelocitybetweenpadandwafer,pad(roughness,

hardness,elasticmodulus,etc.)andslurrycharacteristics.In

respecttopadsurfaceroughness,aconditioningprocessis

performedinordertoremovedebrisfromthepadsurface,

restorepadsurfacequalityandthustoachievehighandstable

removalratesfromwafertowafer.

Thus,asmallamountofpadmaterialiscontinuouslyremoved

andthespecificpadsurfacepropertiesareestablished.Be-

causeonlythismodifiedupperpadlayer,definedas‘asperity

layer’,contactsthewaferduringpolishing,ithasalarge

impactonthequalityoftheCMPprocess.Tocharacterizethe

interrelationbetweenconditioningandpadsurfacetexture,a

novelroughnesscharacterizationmethodologyhasbeendeve-

loped.Itiscapableofextractingimportantcontactmechanical

parameterslikethemeanasperitiesradiusofcurvature,the

asperityheightandsizedistribution.Thesepadpropertiescan

belinkeddirectlytoprocesscharacteristicslikeremovalrate,

defectdensityandplanarizationperformanceinCMPandthus

beusedforconsumablestestingandoptimization(Fig.3).

AnothertopicinwhichtheFraunhoferCNThaslarge

experienceisthecharacterizationoftheCMPplanarization

performance.Forthis,theinfluenceofconsumableslikeslurry,

padorconditionerontheplanarizationofspecificallydevelo-

pedCMPtest-wafersissystematicallyexaminedandevaluated

usinginhousedevelopedanalysisroutines.

Stringentrequirementsofnewesttechnologynodesaswell

asthetransformationoftraditionalICmanufacturingtowards

foundrybusinesseswithawideandrapidlychangingproduct

portfolio,inextremecaseswithlittlequantities,theever

decreasingtimetomarketandshortenedproductlifetimeof

chipgenerations,allthesedemandawell-alignedCMPdesign

andprocess.ThusaCMP-awaredesignbecomesmoreand

morecrucialtobecapableofcompetingonthemarket.

NovelCMPmodelingapproachesareapowerfultoolfor

achievingthisgoalbyenhancedprocessunderstanding,

thereforeenablingnewintegrationpaths,precisedesignrules

withfillstrategiesandcosteffecientprocessdevelopment.

TheFraunhoferCNThasgreatknowledgeinthecharacteri-

zationofplanarizationprocesseswiththehelpofpatterned

CMPtestchips(Fig.1).Thedatacollectedisusedtobuild

upchipandfeaturescaleCMPmodels,whicharecapable

ofsimulatingthecharacterizedplanarizationprocess.Such

calibratedmodelscanbeusedonrealproductionlayoutsto

identifyhotspotsandsupportsmartfillstrategiesorsuggest

designchangesbeforetheproductionofthemasksets.

1 Structures used for

process characteri-

zation.

(a) density field 1,

(b) pitch field,

(c) density field 2.

white: up-regions,

black: down-regions.

2 CMP equipment at the Fraunhofer CNT: (left) Applied Materials

Reflexion LK; (right) Stangl mobile slurry systems.

3 Confocal measurements of a conditioner (top)

and a 1 mmx1 mm conditioned pad sample (down).

4 (left) Measured (symbols) and modeled planarization of test structures with 20 µm line width, 20 µm space width and 50 %

density. (right) Measured (symbols) and modeled planarization of test structures with 50 µm line width, 20 µm space width and

71.4 % density.

40 41

cOmPeteNce areamasKLess LithOgraPhy

Thecompetencearea"MasklessLithography"providesmanufacturingofresist

masksinspecialorganicphotoresistswithpatterningsizesdownto35nmandtheir

transferintotheunderlyinghardmask.Exposureiscarriedoutusingmasklesselectron

beamlithography.Thecompetenceareafocusesonthepreparationofcustomerand

application-specificdesignsandlayoutson200mmand300mmwafersviaamodern

andflexibledirectpatterningprocess.

cOmPeteNces

In2011,FraunhoferCNT‘spatterningcapabilitieshavebeenextendedtomeetcustomer

requirementsaccordingtohighresolution"More-Moore"applicationsbutalsofornovel

"More-than-Moore"challenges.Researchinthefieldofe-beampatterninghasbeenintensi-

fiedregardingresistresolution,dataprepandproximityeffectcorrection(PEC)aswellasmost

advancede-beamlithographyprocessesoncustomerspecificsubstratesandstacks.

treNDs

In2011,FraunhoferCenterNanoelectronicTechnologies

(CNT)startedactivitiesinthefieldofproductionofnano

imprintmastertemplatesinclosecollaborationwithvarious

customers.Themaintaskwastoimplementasuitableprocess

forshortreactiontimestolayoutchangesandfastproduction

oftheresistmasksforfurtherprocessing.Firstexperiments

withasimplehardmaskandresiststackasshowninFigure1

yieldedpromisingresultsforawiderangeoffeaturessuchas

linespacestructuresandlargelatticeorpillararrays.

ThisprocesstakesadvantageofexistingknowhowatFraun-

hoferCNT,especiallytheflexibilityoftheVistecSB3050DW

shapedelectronbeamlithographytoolwhichallowsalmost

anyfeaturetobewrittendirectlyintotheresistonthesame

wafer.Afterthelithographicpatterning,thestructuresare

transferredintothesiliconbyahardmasketchprocess.

Thisallowsprecisedepthtuningfortheimprinttemplatewith

verygooddepthuniformityandsteepsidewallangles.Thisin

turnensuresahighstructurequalityovertheentiretemplate

area.ExampleSEMsoffinishedtemplatestructuresareshown

inFigure2.Becauseofthesiliconstructuring,theproduced

templatesareverydurable.Afterfinishingthestructuringof

thetemplates,anadditionalorganiclayerisspunontopof

theproductinordertoprotectthesurfacefromdamageor

particles.Inthisstatetheycanalsobecleavedtotherequired

sizeinordertobereadyforusageatthecustomer’ssite,

wheretheprotectivecoatcanbeeasilyremovedwithstandard

solvents.Thispost-structuringhandlingprocessisdesignedto

ensureverylowdefectivityonthedeliveredtemplates.

Theproductionofmultilayerimprintmasterstakesthe

templateproductiononestepfurther.Amultilayertemplate

eliminatestheissueofoverlaywhileproducingwithtwo

separatetemplatesatthecostofamorecomplexproduction

cycleofthetemplate.Wesuccessfullyintegratedatwo-layer-

templatewithourpartnersFraunhoferInstituteforPhotonic

Microsystems(IPMS)andtheTechnicalUniversityDresden.

maNUFactUriNg OF NaNOimPriNt temPLates

Thefirststepstructuredawaveguideintothesilicon,shown

aspinkbarsinFigure3.Thesecondlayer(purple)structured

acouplingontopofthewaveguideinordertoallowsignals

ofacertainwavelengthtobecoupledintothesubstrate.

Waveguidesandcouplingswereprintedinawiderangeof

sizestoallowfinetuningofwavelengthsandtobeableto

characterizethewaveguidebehavior.Anexampleofthe

producedpatternsisshowninFigure3(left page).

Itshowsthelayoutofthecouplingontheleftandthe

producedimprinttemplateontheright.Thisfeaturecontains

acurvedshapewhichwaseasilypatternedviaagdslayout

providedbyourpartners,whohadfreehandindesigning

theirtemplate.Incaseoflayoutproblems,adjustmentsand

changescanbeimplementedonsitewithinminutestoensure

thatonlycorrectpatternsareprinted.

TheconstantlymonitoredprocessesatFraunhoferCNT

enableaquickandpreciseintegrationofbothlayersonthe

siliconsubstrate.DirectwritelithographyatFraunhoferCNT

iscurrentlypossibleon200mmand300mmwafersona

production-likeflow.Inaddition.wafersizesdownto100mm

canbehandledforrapidprototypingapplicationsenabling

cost-effectiveandflexibledirectwritingformanyR&D

scenarios.

GroupManager

Patterning

Dr.ChristophHohle

Phone:+493512607-3013

christoph.hohle@cnt.fraunhofer.de

1 Schematic process flow of imprint production

2 Imprint template structures transferred into silicon

3 Optical coupling as designed

(left) and as final imprint temp-

late (down)

42 43

masKLess LithOgraPhy

Resistpatterningonwafersusinge-beamlithographyisan

alternativetoopticallithography.Especiallyforrapidprototy-

pingapplicationswithverysmallwafervolume,electronbeam

directwrite(EBDW)hascertainadvantages.Forexample,

designchangescanbeimplementedovernightandverified

beforemasktapeout,differentdesignversionscanbetested

ononewaferordesignbugscanbecorrected(especially

metalfix).EBDWprovideshighresolutionandthevariable

shapedbeamsystemshavehigherthroughputcomparedto

Gaussianbeamsystems.Furthermore,maskcostsaresaved

andmaskdeliverydelayisremoved.

Forthe22nmnode,theITRSroadmapincludesmaskless

lithography(ML2)usingmultibeamtechnologies.High

resolutione-beamresistsareneededforML2toreachthe

requirementsoftheITRS.Chemicallyamplifiedelectronbeam

evaLUatiON OF Direct PatterNabLe iN-OrgaNic sPiN-ON harD masK materiaLs UsiNg eLectrON beam LithOgraPhy

resistsarefulfillingsensitivityrequirementsfore-beamdirect

writingbutarelimitedinresolutionduetoaciddiffusion.

Stowersetalhaveshownelectronbeamexposureresults

usinginorganicnon-chemicallyamplifiedresistsbasedon

hafniumandzirconiumoxideswithhighresolutionandhigher

sensitivitycomparedtostateofartnon-chemicallyamplified

resistslikehydrogensilsesquioxane(HSQ).

FraunhoferCNTinvestigatedanewinorganicnon-chemically

amplifiedresistsprovidedbyInpriaCorp.andcomparedthem

withtwootherhighresolutionresists:HSQandanegative

tonechemicallyamplifiedresist(nCAR).Asametaloxide,

theresisthashighetchresistancecomparabletohardmask

materialsandisapromisingcandidatefore-beamlithography

aswellasforEUVlithography.Withthevariableshapedbeam

atFraunhoferCNT1:1densepatternwithadimensionof

100μmx100μmwereexposed.InFigure1exposureresults

ofthat1:1densepatternfor3differentfeatureCDsare

summarized.Thepatternsarealmostontarget.Aproximity

effectcorrectionfor1:1densepatternisnotneeded.XE15IB

isabletoresolveeasily30nmoftheselargedensepatterns.

VISTECsSB3050DWwasdesignedfortherequirementsofthe

50nmnodeandreachesitstoollimitationexposing30nm

patternandbelow.Aresolutionof30nmhpdenselineswas

neverachievedbeforewiththistoolatFraunhoferCNT.

Theslightstitchingvisibleinthepicturescomesfrom

theelectronbeamandcanbeminimized.ForcomparisonHSQ

isabletoresolve35nmonly(55nmfilmthicknessandconcen-

trateddevelopmentwith25%TMAH)havingnoresolutionto

obtain30nm.K.SteidelhasshowninherPh.D.thesisthatthe

nCARhasaminimumresolutionof40nmfor1:1denselines.

Alargerealapplicationpatternisalsodemonstrated.The

chosenpatternisarealSRAMmetal1layerforthe32nm

technologynode.Thislayerwasshrinkeddownto22nm

featuresize.

Thepatternwasproximityeffectcorrectedwithgeneralpro-

ximityeffectcorrection(PEC)parametersfornon-chemically

amplifiedresists.ThedesignandSEMimagesoftheSRAM

patternareshowninFigure2.WhilethefeatureCDison

target,itisclearlyvisiblethatsomelinesarenotcorrectly

resolvedorspacesaremerged.CorrectPECparameterscan

improvetheresolutionandwillbedeterminedfortheInpria

resistinthenextsteps.FraunhoferCNTevaluatedXE15IBina

nearproductionenvironment.Theresistisbasedonhafnium

oxideasadirectpatternablespinonhardmask.Toinvestigate

resolutionanddelaystabilitiessuchasvacuumdelayandshelf

life,Contrastpattern,1:1denselinesandaSRAMmetal1

layerwereexposed.

ThecontrastofXE15IBisabout50%betterthanHSQand

thedoseiscomparable.XE15IBshowsgoodresolutionfor

22nmSRAMpattern.ComparedtoHSQandthenCAR,XE15-

IBhasabetterresolutionforlarge1:1densepattern.30nm

halfpitchlinesareresolvable.Shelflifeandvacuumstability

ofXE15IBdoesnotyetmeettherequirementsforashelf

lifeofseveralmonthsandavacuumdelayuptooneday.By

improvingtheresistprocessorbysizingthedensestructures

thepatternqualityofthe30nmlinesisexpectedtobecome

improveddownto27nm.

AfurtherresolutionimprovementoftheSRAMfeatures

canbeobtainedbyapplyingthecorrectproximityeffect

parameter.Asignificantadvantageofahafniumoxidebased

resistcomparedtoothersistheetchselectivitysothatrelaxing

thefilmthicknessispreventedfrompatterncollapse.Infuture

researchactivitiesetchperformance(selectivitytoSilicon)

hastobeprovenandadditionallyLWRandLERhavetobe

investigatedatFraunhoferCNT.1 XE15IB SEM images of 1:1 dense pattern with feature CD 30nm (measured CD mentioned top left)

2 XE15IB SEM ima-

ges of 22nm SRAM

pattern (FOV 4µm (a)

and 2µm (b)), layout

courtesy of GLOBAL-

FOUNDRIES

44 45

masKLess LithOgraPhy

Thedatapreparationfore-beamlithographyisan

essentialtechnologicalcomponentandneedstobe

improvedsimilarlytoimprovementsofresistresolution

ortheresolutionoftheexposuretool.Tofulfillthe

requirementsanddemandsofupcomingsemiconductor

technologynodesandothercustomersofe-beamlitho-

graphy,FraunhoferCNTupgradeditsformer32-bitdata

preparationclusterenvironmentin2011.Thenewhigh

performancecluster,whichwassetupfornewdata

preparationsoftware,isequippedwithamasternode

andfourcomputingnodeswithGraphicsProcessing

Units(GPUs)basedona64bitLinuxoperatingsystem.

Theaccessiblememoryandcomputingpowerenables

theprocessingofhugeamountsofdatawhichare

commoninsemiconductorindustryandincreasewith

upcomingtechnologynode.Theinvestmentforthe

DataPrephardwarewasfundedbyBMBF/SMWKwithin

theBRIDGEproject.

Thedatapreparationsoftware,whichpreparestheexposure

datausingparticularalgorithmsofproximityeffectcorrection

andfracturing,impactstheresolution,theexposurequality

anditsprocesswindowine-beamlithography.Fraunhofer

CNTiscollaboratingwithASELTANanographics,Grenoble,

Franceforprovidingthecreativesolutionforfuturesub-30nm

maskwritingandML2applications[Ref.PressRelease].This

industrialcooperationnotonlyaimsatthedevelopmentof

proximityeffectcorrectionsbutalsotriestoimprovevarious

practicalfactorsine-beamlithography,suchastheshortening

ofwritingtime,speedingupthedatapreparationprocess,

customizationetc.

Throughtheco-workofFraunhoferCNTandASELTA

Nanographicsitwasalreadyproventhattheexposurequality

andcapabilityine-beamlithographycanbeenhancedbythe

newlydevelopeddataprepsoftwareINSCALE®.[Ref.Proc.

SPIEVol.8166,816621,2011.]Furthermoreiteithercan

amendtherealapplicationfactorsofe-beamlithography,like

calculationtime,theinfluenceforwritingtimeetc.Thecolla-

borationbetweenFraunhoferCNTandASELTANanographics

isongoingtorefinetheinnovativedataprepsolutionandto

makeitfitfornexttechnologicalnodesandML2applications.

AseltaNanographicsdevelopedthenewtypeofalgorithm

calledelectronResolutionImprovementFeatures(eRIF),which

basesonthedosemodulationandmultiplepassexposure.

UPgraDe OF the Data PreParatiON eNvirONmeNt FOr cNt’s e-beam LithOgraPhy

Figure2 presentsthetestpatternimages,exposedand

observedatFraunhoferCNTandcorrectedwitheRIF.With

theapplicationofeRIF,testpatternsareclearlyresolvednot

onlyonthedenselinesof40nmbutalsoonthatofdown

to36nm.Theartificialarraysof40nmtestpatternsarealso

resolvedwithgoodqualities.

ThetestartificialarraywiththedesignCDsof36nmare

observedasenhanceditsqualityofexposuresbutwithsome

glitches.Itisconsideredthatthesearenotjustduetothe

capabilitiesofdataprepbutalsothesusceptibilityofprocess

intheappliednCARisgettingtoreachitsboundary.Though

theobservationoftestexposurethatisobtainedinthe

artificialarrayof36nmdoesnotseemperfect,theeRIFisable

todemonstratethatthedataprepcanmaketheexposures

possibleforatechnologynodebeyondusingcurrentexposure

toolanditsprocesses.

1 Comparison of the simulations and test exposed images between

dose modulated correction and dose-geometry modulated correc-

tion

Oneofthepromisingcandidatesfortherealapplicationin

e-beamlithographyinnearfutureiscomplementaryexposure,

especiallyforthehighvolumemanufacturinginfuturetechno-

logicalnode.Becauseofthecharacteristicsofitsapplication,

thedesignconsistsnotsimplyofthelinerepetitionbutofthe

complicatedcombinationoflines,polygons,elongatedholes

andholes.Toachievetheusablecorrectionsforthose,the

variouscorrectionredundancies,whichmeansnotonlyofCDs

butalsoforcornerroundingandLES,arerequired.

Thismeansthecorrectionalgorithmitselfshouldbemore

weightedto2-dimensionsthanthe1-dimensionalway.Itis

thereasonwhyeRIFisconsideredasbeneficialtothisappli-

cation.Figure2exhibitstheimagesofexposedtestpatterns,

whicharecorrectedbyeRIF,alongwiththesimulatedresist

contoursafterthecorrection.Thosearefurtherenhanced

thantheimagesobtainedfromthepatternsthatarecorrected

usingdose-geometrymodulations,whicharenotshownin

here,whentheyarecross-examinedincomparison.

2 SEM images of test exposed patterns corrected and prepared with

eRIF and Inscale®.

dose modulation dose-geometry mod.50

nm

60

nm

dense line artificial array

36 n

m40

nm

Novel 64bit-high

performance cluster device

for e-beam data prep

3 Screenshot: graphical user interface (GUI) Inscale Software

36 n

m40

nm

46 47

cOmPeteNce areaDevices & iNtegratiON

Themainresearchtopicofthecompetencegroup“Device&Integration“isthe

developmentandintegrationofnanoelectronicprocessmodulesanddevices.There,

thefocusisontheelectricalcharacterizationofsemiconductordevicesonwaferlevel

suchasmemorydevices(singlememorytransistors,arraysanddemonstrators)aswell

asonthedevelopmentofconceptsfortheintegrationofnewmaterialsand

innovativeetchingprocessesinprocessflowsinordertofabricatenanoscaled

structures.Thedesignandfabricationofteststructuresandtestchipsenablesfast

learningcyclesforprocessdevelopment.

cOmPeteNces

Withtherecentdevelopmentsinintegratingnewthin-filmmaterialssuchashigh-k

gatedielectrics,manyprocessintegrationissueshavetobesolvedinordertomeet

thereliabilitytargetsandtobenefitfromalowpowerconsumptionandhigh-

operatingfrequencyofdevicesinthe2xnmscale.Forstructuringthenewmaterials,

advancedetchingprocessesneedstobedevelopedforachievinggooduniformityand

lowdamageofadjacentstructures.Theetchingplaysalsoabigroleinthefabrication

ofdeeptrencheswithsmalldiameterthatareusedfor3D-capacitorsbutalsoforthe

TSVpackagingtechnology.Here,researchisfocusingongaininghighaspectratios

whilemaintainingsmoothtrenchsurfaces.

Theelectricalcharacterizationisaddressingthechallengesofthenewmaterialsand

processes.Therefore,advancedreliabilitycharacterizationmethodsofhigh-k

materialsandthedevelopmentofnewteststructuresforprocessmonitoringareon

theroadmapaswellastheinvestigationofreliableprobingandtestingonsmall

contactpadsthatareimportanttoreducethechip-areaandtoenablenewpackaging

treNDs

GroupManager

Devices&Integration:

Dr.VolkhardBeyer

Phone:+493512607-3051

volkhard.beyer@cnt.fraunhofer.de

FLeXibLe waFermaP sOFtwareDuetothelackofsuitablefreeandcommercialsoftwaretools

toanalyzeandvisualizetestdataasawafermap,theCNTD&I

groupdesignedandprogrammedasoftwaretoolthatcan

collectandvisualizemeasuredphysicalorelectricalparameters

ondevicelevel.Theaimofsuchsoftwareistomapmeasured

dataofsemiconductorstructurestothephysicalpositionson

thewafer.Thiskindofvisualizationhelpstofindtrendsor

outliersofphysicalorelectricalparametersacrossthewafer

andhencetofindpossibleproblemsintheproductionprocess.

Theprimarygoalwastodesignatoolthatcanhandlemeasu-

reddataofdiscretesemiconductordevicesandteststructures

(regularlyspaceddatewithoutinterpolationinbetween),

e.g.CMOStransistors,memorydeviceslikeFeFET,standard

FlashandTANOSflashcellsaswellascapacitorstructureslike

“MIM”or“MIS”.

Tobeabletohandledifferentkindsofdatafromdifferent

typesoftestequipmentthetoolneedsaflexibleinterface

forthedataimport.Furthermoreitneedstobeflexibleand

extendableenoughtosupportfuturetestdataformats.

Otherrequirementsare:

•Easyuserinterfacethatsupportsafastand

straightforwardworkflow

• Automatizationcapability:Performrepeatingwafer

mappingoperationsautomaticallythatrequiresonlya

smallamountofeffortfromtheuser

• Differenttypesofoutputformats(reports)

TheCNTwafermapsoftwaresupportstwotypesofoperation

modes:Interactivemodeandscriptingmode.Intheinteractive

modetheusermanuallyadjustthedataimportandthevisual

appearanceoftheresultwithaGUIdesignedforthatpur-

pose.Thisisthefastestwaytoproducearesultinonlyafew

minutes.Theusercanadjustthecolormappingandafewof

themostimportantparametersforthevisualstyle.Thismode

islikeafastpreviewmodeduetoitslimitednumberofadjus-

tableparameters.Thesecond,muchmorepowerfulmodeis

thescriptingmode.TheCNTwafermaptoolcanbecontrolled

byaspeciallydesignedscriptinglanguage(batch-style).The

integratedscripteditorallowstoload,save,editandrunsuch

scripts.Withmorethan20keywordstheusercancontrolall

parametersfordataimport,exportandthevisualappearance

ofthewafermap.

Additionally,thescriptmodeispartlyinteractivebyallowing

theusertoclickoncertainkeywordswhichopensasuitable

windowtomakeadjustmentstothekeywordparameters(e.g.

clickingonacolorstatementwouldopenacolorpicker).The

outputgeneratedbythescriptcanbepreviewedbeforebeing

exportedtoanexternalreportfileandtheusercanbrowse

throughthegeneratedwafermapsheets.Thus,theuserhas

afastfeedbackoftheresultinacomfortableandeasytouse

developmentenvironment.

1 A typical wafermap generated by CNT Wafermap (up),

CNT Wafermap interactive mode (down)

48 49

Devices & iNtegratiON

Sinceconventionalmemorytechnologiessuchasfloatinggate

flasharefacingsevereproblemsbelowtechnologynodes

ofaround3xnmandbeyond,manufacturersofnonvolatile

memories(NVM)aredevelopingmemoryconceptswhich

allowforfurtherincreaseofcelldensity.Thesenewconcepts

areoftenreferredtoasemergingmemories.AlsoFhGCNTis

involvedinseveralprojectsinvestigatingandpreparingnext

generationNVM.

FeFEt

Onepromisingcandidateforfuturenonvolatilememoryis

theFerroelectricFieldEffectTransistor(FeFET)whichhas

beendevelopedandmanufacturedincooperationwithGLO-

BALFOUNDRIESandNAMLABgGmbH.AtFhGCNTcritical

processesforthedeviceperformancewerecarriedoutsuchas

depositionoftheferroelectricmaterialandetch.Usingvarious

teststructuresandsingletransistorsontheprocessedwafers

FhGCNTconductedapartoftheelectricalcharacterization

andoptimizationofperformanceparameters.

There,itwaspossibletoverifythebasicdeviceoperation

whichisrepresentativelydepictedinFigure1a.Endurance

comparabletocurrentFlashtechnologiesaswellasdata

retentionexceeding10yearswasfurtherdemonstrated.

Additionally,outstandingswitchingtimesbelow20nswere

achievedascanbeseeninthetimeandfielddependent

memorywindowmatrixinFigure1b.

Usingleadingedgewafertestequipmentallcharacterizations

werealsodoneonhighstatisticstoensureabalanced

overviewofelectricalparameters.

aDvaNceD memOry DeveLOPmeNt

1 (a) Basic device operation of a ferroelectric field effect transistor

(top). (b) Time and field dependence of ferroelectric switching and

its impact on memory window evolution.(down)

Insummarythispredictsafast,highlyscaled,non-volatile

memoryconceptbasedonahighlyengineered,ferroelectric

HfO2.Incurrentandfutureprojectsa100bitdemonstrator

willbefabricatedrepresentingthefinalstepinputtingthe

newlydiscoveredferroelectricpropertiesofHfO2toauseful

applicationinindustrialscale.

Enery efficient non-volatile SRAM

FhGCNTisinvolvedinthedevelopmentofnon-volatileSRAM

(nvSRAM)atANVO-SYSTEMSDRESDEN.Thebasicelectrical

characterizationaswellasreliabilitymeasurementssuchas

program-eraseenduranceanddataretentionwasconducted

usingautomaticwafertestersintheCNTlaboratory.

Forthispurposeasetofspecifictestprogramswasdesigned

implementingtheindividualneedsofthisnewmemory

technology..Thisnon-volatileSRAMcombinestwoproven

technologies(CMOS-SRAMandSONOSnon-volatilememory)

intoanewtechnologyforfast,reliableandenergyefficient

memories.

DuetounrestrictedinternalSRAMfunctionality,bothfast

readsandwritescanbeexecutedwiththesamehighspeed.

Thebuiltindataprotectionisrealizedinahighlyparallel

internalarchitecture.AnextremelyenergyefficientSTOREme-

chanismenablesthedevicetotransferthewholeSRAMdata

to/fromthenon-volatilearrayinjustonesinglestepoperation

(8msSTORE/10μsRECALL).

Theobtainedelectricaldatarevealsasuperiorreliabilityof

20+yearsdataretentionandpracticallyunlimitedwrite/erase

endurance.Combinedwithextremelylowpowerconsumption

atfastwritespeedsthisnvSRAMaddressesawiderangeof

applications.

Itisideallysuitedforself-poweredandlowpowermobile

systemsinmedicalandautomotivesolutionsbutalsoas

highspeednon-volatilestorageinindustrialorcomputing

applications.rangeofapplications.Itisideallysuitedforenergy

autarkicandlowpowermobilesystemsinmedicalandauto-

2 Schematic of an nvSRAM cell (6 SRAM transistors and 2 SONOS non-volatile transistors)

motivesolutionsbutalsoashighspeednon-volatilestoragein

industrialorcomputingapplications.

3D NAND Flash Memory

Anotheraspectofmanufacturingnonvolatilememoriesis

thescalabilityofthedevice.Duetotechnologicallimitsand

emergingcostsforplanarmemoryarraystherearevarious

approachestobuild3-dimensionalmemoryarchitectures.

Thesenewarchitecturesarebasedonaverticalmultigate

NAND-structuretoincreasethedevicedensityperchipby

stackingmemorycells.

Thechallengeinbuildingsuchmemorydevicesishere

shiftedfromlithographytotheetchingprocess,whichhasto

structureamultilayerstackconsistingofSiO2andamorphous

siliconinthecaseofaBiCS(Bit-costscalable)flashmemory.

WithintheGOSSAMERProjectFraunhoferCNThasfocused

in2011onselectedtopicsrelatedtotheintegrationof

3D-structuresintheBiCsflashmemoryconceptsuchasmulti

stacketch,dielectricdepositionandpoly-Siverticalchannel

formationinmemoryholes.Thetestvehicleisbasedona

SiO2/Simulti-layerstackthatmimicsthehorizontalcontrol

gateplatesofmemorycellsseparatedbySiO2insulatorlayers

(Figure3).

50 51

Devices & iNtegratiON

Themajorchallengein3DNANDfabricationusingtheBICS

approachisthehighaspectratiofordryetchingofmemory

holearraysintothea-Si/SiO2multigatestack.Basedon

previouslydevelopedSiO2andSisinglelayeretchprocesses,a

one-stepetchprocesshasbeenchosenasfrontupapproach

forthemulti-stackopenprocess.

Inthisapproachbothmaterialsa-SiandSiO2areetchedwithin

oneprocessstep.Advantagesofthissetupcomparedtomulti

stepormultichamberapproachesarelesscomplexity,higher

manufacturabilityandlowriskofdefectdensity.

Twomajortopicshavebeenidentifiedasmainchallenges

whichareisotropicetchintothea-Silayerandetchselectivity

SiO2

a-SiSiO2a-SiSiO2

4 Multi gate stack etch after optimization of the isotropic

a-Si etch attack and selectivity to the SiO2 hard mask.

3 Schematic of test vehicle for 3D NAND flash development

totophardmask.Inordertodecreasetheseeffectsseveral

gasadditiveshavebeentestedtosustainthepassivationon

theverticalsiliconsurfacesontheonehandanddecrease

thehardmasketchrateontheotherhand.Theoptimized

etchprocessshowspromisingresultswithsufficient

selectivityandnosiliconnotching(Figure4).

Additionally,processesforSiO2/SiN/SiO2chargetrapping

stackfabricationweredevelopedusingtheatomiclayer

depositiontechniquestocoverthesidewallsofthehighas-

pectratiodevicestringtemplates.ForSichannelformation

a-Sidepositiontechniqueswereinvestigatedincludingthe

selectiveepitaxyofSitogrowtheSichannelverticallyfrom

thechannelbottom.

a-SiSiO2

shOrt-LOOPs FOr eLectricaL materiaL characterizatiON

Highperformanceandreliabilityaswellaslowpower

consumptionaremainrequirementsontheevolutionroadmap

ofintegratedcircuitsaddingmorefunctionalityandprocessing

speedtonextchipgenerations.Inordertomeetthese

requirements,materialandinterfacepropertiesofinternal

devicesasinthegatestackoftransistorsorinintegrated

capacitorsusedinDRAMmemoriesorinanalogcircuits-need

tobeoptimizedineachtechnologygenerationinparallelto

downscalingoffeaturesizes..

AtFraunhoferCNTprocessesforthinlayerdepositionofnew

andalsoconventionalmaterialsareevaluatedandoptimized

for300mmwaferfabricationandbelowfordifferentchip

applications.Besidesuniformityorinterfaceroughness,the

electricalperformanceofconductanceandcapacitanceas

wellasinterfacetrapdensityorbreakdowncharacteristicsare

keyparametersstudyingthefeasibilityofnewmaterialsor

processingtechniques.Inordertoachievefastfeedbackloops

forcustomers'processandmaterialsoptimizationdifferent

short-loopconceptsareavailableatFraunhoferCNT:

IntegratedplanarMIS/MIMshort-loop•

MetaldotdepositiononMIS/MIMstacks•

MIS/MIMtrenchcapacitorshort-loop•

AllthreeconceptsaresuitableforMISandMIMstacksof

variousmaterialcompositionsandwillbedescribedinthenext

sections.

integrated planar Mis/MiM short-loop

ThisconceptisbasedonaflexibletestorderThisconceptis

basedonaflexibletestchip(Figure1)comprisingtwolitho-

graphylayersthatarewrittenmasklessbye-beamlithography

onmanyspotsoverthewafer,thusprovidinghighaccuracy

andstatisticsforelectricalcharacterizationanddeliveringalso

informationaboutuniformitycharacteristicsofthinfilmlayers

overthewafer.TheplanarMIS/MIMtestwaferarefabricated

using300mmwaferprocessingtools.

AsshowninFigure2theMIS/MIMareasaresurroundedby

SiO2inordertoachievesufficientisolationbetweenbottom

andtopelectrodeandtoallowsavecontactbyprobeneedles.

DuetoastandardcontactinterfacetheintegratedMIS/MIM

waferscanbemeasuredonafullyautomatedprobe-station

usingaprobecardwith25needles.Thisallowsstatisticalreli-

1 Testchip Layout

52 53

Devices & iNtegratiON

abilitytestingandmaterialcharacterizationinatemperature

rangefrom-55°Cupto200°C.Electricalmeasurement

resultsofaMISstructurewithhigh-kmaterialasdielectricare

showninFigure3.IntheCVcharacteristicperformancegain

ofhigh-kmaterialscanbederivedwhentransformingthe

measuredcapacitanceintoatheoreticalequivalentthickness

ofSiO2.Thatmeans,whilemaintainingsamegatecapacitance

thehigh-kmaterialcanbemuchthickercomparedtoSiO2thus

reducinggateleakage.currentandfinallypowerconsumption

ofthedevices.

Metal dot deposition on Mis/MiM stacks

Inearlydevelopmentphaseorforveryfastfeedbackloops

themetaldotdepositiononMIS/MIMstacksisthemethod

ofchoiceenablingfastelectricalassessmentofmaterials.

Althoughaquitesimpleapproach,itallowsalargevariety

ofdifferentmeasurementsincludingreliabilitytestingwith

moderatestatistics.

Beingbasedonlyonsmallwaferpiecesthedrawbackofthis

procedureislackinginformationaboutwaferuniformityunless

preparingmultiplesamplesfromdifferentwaferspots.Inan

ionbeamdepositiontoolashadowmaskontopofthesample

projectsdefinedmetalelectrodes(dots)ofdifferentsizeand

shapeontothesample.

Bymeansofspecificpreparationmethods,theseries

resistanceandcontacttothechuckisreducedforoptimum

3 Electrical results of a high-k based MIS stack with (l) current voltage-, (m) capacitance-voltage- and (r) conductance characterisic

measurementresults.Whenhavinganadditionalplanarmetal

electrodeontopofthedielectricfurtherspecialtreatmentsare

requiredafterdotdepositionallowingalsothecharacteriza-

tionofcompleteMIM/MISstackswithdefinedworkfunction.

Thelayoutofthedotarrangementallowsalsoautomatic

characterizationofmultipledotswithdifferentsize.Electrical

resultswitherrorbarsofcurrent-voltagemeasurementsin

Figure5showsagoodreproducibilityofthemeasurementson

differentdots.

Mis/MiM trench capacitors short-loop

ResearchersatFraunhoferCNTdevelopedapreparationand

characterizationmethodforMIS/MIMtrenchcapacitorsin

ordertounderstandtheelectricalperformanceofdielectrics

andelectrodesin3Dtrenchesinaveryearlytechnologydeve-

lopmentphase.Thisenablesalsoevaluationofnewmaterials

anddepositionprocessesatotherresearchsitesbasedon

wafersorwaferpieceswithtrencharraysofdifferentpitch

andcriticaldimension.Forelectricalmeasurement,thetrench

arraysareequippedwithsmallmetalelectrodesthatare

separatedfromotherelectrodesbyanadditionalprocessing

step(Figure6).Thecharacterizationiscarriedoutwithtiny

probe-needles.Withthismethod,variouselectricalproperties,

likecapacitancepertrenchorleakagecharacteristiccanbe

investigated.

-3 -2 -1 0 1 2 31E-91E-81E-71E-61E-51E-41E-30.010.1

110

J[A

/cm

²]

Bias [V]

Diel. A Diel. B Diel. C Diel. D Diel. E

4 (top): Shadow mask layout (top) and schematic measurement se-

tup (down) as example for dielectric characterization (MIS)

5 (top left): Current-voltage plots with error bars of different high-k

dielectric material thicknesses

6 (left): Photograph of trench arrays having different pitch and di-

mension with metal electrodes (black) and probe-needle on contact

2 Schematic cross

section (left) and TEM

cross-section (down)

showing the integrated

MIS material stack with

magnification

54 55

eveNts

Fraunhofer CNT at Semicon Europe 2011

Torben Kelwing in the TechArena at the Semicon Europe 2011 Dr. Malte Czernohorsky at Nanotech Japan 2011

traDe Fair activities

DasFraunhoferCNTpräsentiertesich2011aufinsgesamt

fünf Messen und Ausstellungen mit den neuesten

Entwicklungen.des Institutes.Besonders gefragt waren

die Analytikleistungen des Fraunhofer CNT, vor allem

die Atomsondentomographie sowie das energieautarke

Sensorsystem. Erstmals in diesem Jahr war das CNT

zweimalbeiMesseninJapanvertreten,umKontaktemit

Industrievertreterzuintensivieren.

In 2011, Fraunhofer CNT presented its latest research

resultsonfivetradeshowsandexhibitions.

Theanalyticservices,liketheatomprobetomographyas

wellastheself-poweredsensorsystem,wereespecially

popularamongthevisitors.

For the first time, theCNT attended two trade fairs in

Japantointensifycontactswiththelocalindustry.

Nano tech February 16-18, 2011 Tokyo / Japan

silicon saxony Day March 09, 2011 Dresden / Germany

semicon West July 12-14, 2011 San Francisco / USA

semicon Europa October, 11-13, 2011 Dresden / Germany

semicon Japan December, 07-09, 2011 Chiba / Japan

56 57

eveNts

FraUNhOFer cNt research Day 2011

Am 2. November 2011 fand der zweite Fraunhofer CNT

Research Day statt. Spannende Vorträge von externen

ExpertenundWissenschaftlerndesFraunhoferCNTstanden

imMittelpunktdiesesTages.Eskonntenwiederhochkarätige

Referenten von Infineon, Air Liquide, ASM und weiteren

bekannten Unternehmen der Mikroelektronik gewonnen

werden.NebendenexternenVorträgenwurdenErgebnisse

aktueller Forschungsarbeiten von Wissenschaftlern des

FraunhoferCNTvorgestellt.

Knapp 100 nationale und internationale Gäste aus Politik,

Wirtschaft und Wissenschaft namen an der Veranstaltung

teil..Aufgrund der wiederholt zahlreichen Teilnahme und

dempositivenFeedbackderGästehatsichderCNTResearch

DayfestinunseremVeranstaltungskalenderetabliert.

ThesecondCNTResearchDaytookplaceon2ndNovember

2011. Recognized experts of leading companies in the

microelectronics business, such as Infineon, Air Liquide

and ASM, as well as scientific staff representatives of

FraunhoferCNTgaveexcitingtalksontheirlatestresearch

resultsandinnovations.

About100nationalandinternationalguestsfrompolitics,

industry and science took part in the event. The large

number of participants and the positive feedback show

the successof theResearchDay.Thus, itwillbecomea

regulareventattheFraunhoferCNT.

lange Nacht der Wissenschaften

Am 1. Juli 2011 fand die 9. Dresdner Lange Nacht der

Wissenschaftenstatt.DasFraunhoferCNTpräsentiertesich

im Fraunhofer Institutszentrum auf der Winterbergstraße.

DieBesucherdesStandeskonntenaneinemModelldenWeg

vomSandzumSuperchipverfolgenoderaneinerAnimation

eine Reise in die Nanowelt antreten. Zusätzlich gab es die

Möglichkeit, einen Chip unter einemMikroskop unter die

Lupezunehmen,sichineinemReinraumanzugfotografieren

zulassensowieseinWissenineinemQuizzutesten.

The 9th Night of Sciences took place on 1st of July

2011. FraunhoferCNTparticipatedwithaboothat the

FraunhoferinstitutecenteratWinterbergstraße.Visitors

could follow the way „from sand to superchip“ on a

model. They could experience a jouney into the world

of nanoelectronics. They had the chance to examine

microchips with a microscope or to slip in clean room

clothes and to test their knowledge by participating in

aquiz.

Friday@Fraunhofer

Am24.Juni2011besuchtenSchüleranlässlichdesFriday@

FraunhoferdasFraunhoferCNT,umaneinemVortragsowie

einer Window- und Labortour teilzunehmen. Bei einem

BesuchdesReinraumskonntendieSchülereineMengeüber

die Forschung, z. B. im Bereich der Halbleiter, deren inte-

grierte Schaltkreise mit Strukturbreiten unter 100 nm, die

CharakterisierungvonMaterialienoder innovativeAnalyse-

undProzessmethodenlernen.

OnJune24,2011pupilsvisitedFraunhoferCNTonthe

tolistentoalectureandtotakepart inawindowand

laboratorytour.Duringavisitinthecleanroom,students

learnedalotaboutresearch,theygotinformationabout

semiconductors, integrated circuits with dimensions

below100nm,material characterization or innovative

analyticalandprocessmethods.

Promotionen am cNt

Im Jahr 2011 konnten wir zwei unserer Mitarbeiter zu

ihrerPromotionbeglückwünschen.

FrauDr.RomyLiskeverteidigteihreDissertationmitdem

Thema:"Die Kinetik der elektrochemischen Kupferab-

scheidung in Sub-100 nm-Strukturen". RomyLiskeist

seit2011GruppenleiterdesBereichesFunctionalElectronic

Materals:Back-EndofLineamFraunhoferCNT.

HerrDr.SergejMutasverteidigteseineDissertationmitdem

Titie„Analysis of high-k materials with Local Electrode

Atom Probe“.Dr.SegejMutasistnachseinererfolgreichen

VerteidigungzuGlobalfoundriesgewechselt.

In2011,twooftheFraunhoferCNTscientistswereableto

completetheirdissertations.

Mrs.RomyLiskedefendedherthesiswiththetopic:"The

kinetics of electrochemical deposition of copper in

sub-100 nm structures". She is now working as group

manager of the competence area Functional Electronic

Materials:Back-EndofLineatCNT.

Mr. Sergej Mutas completed his thesis on "Analysis of

high-k materials with Local Electrode Atom Probe“ andis

nowworkingforGlobalfoundries.

Night of sciences

Friday@Fraunhofer

Doctorates at cNt

58 59

eveNts

cOLLOqUia

17.01.2011

48thFraunhoferCNTKolloquium

Prof.Joo-HyungKim

"New electronic material: cellulose for electronics"

20.01.2011

49thFraunhoferCNTKolloquium

Dr.FrankSchwierz,TUIlmenau

"graphen - das Material für die Elektronik von

morgen?“

25.01.2011

50thFraunhoferCNTKolloquium

MayritaArrandale,AtotechUSAInc.

"Microbial Bioremediation of Heavy Metal

containing cMP Wastewater"

08.02.2011

51stFraunhoferCNTKolloquium

Prof.HorstHahn,KIT

"Nano-Forschung am Kit – Kooperationskonzept"

31.03.2011

52ndFraunhoferCNTKolloquium

JanSickmann,TUDresden

"Mapping nanofields in semiconductors by off-axis

electron holography"

13.09.2011

53rdFraunhoferCNTKolloquium

Dr. Torsten Feigl, Fraunhofer Institut für Angewandte

OptikundFeinmechanik,Jena

"EUV multilayer optics"

PUbLicatiONs

Hermann,P.;Fabian,H.;Naumann,D.;Hermelink,A.

Comparative study of far-field and near-field Raman spectra from silicon-based samples and biological

nanostructures

In:Journalofphysicalchemistry.C,Nanomaterialsandinterfaces115(2011),Nr.50,S.24512-24520

Angelova,F.I.

Analyse und Vergleich professioneller Software zur Festplattenverschlüsselung anhand von Verschlüsselungsmetho-

den und Handhabbarkeit zur Absicherung tragbarer Computer

TUDresden,DiplomaThesis

Kukli,K.;Kemell,M.;Lu,J.;Hultman,L.;Riedel,S.;Sundqvist,J.;Ritala,M.;Leskela,M.

Atomic layer deposition of ruthenium films on strontium titanate

In:Journalofnanoscienceandnanotechnology11(2011),Nr.9,S.8378-8382

Müller,J.;Schröder,U.;Böscke,T.S.;Müller,I.;Böttger,U.;Wilde,L.;Sundqvist,J.;Lemberger,M.;Kücher,P.;etal.

Ferroelectricity in yttrium-doped hafnium oxide

In:Journalofappliedphysics110(2011),Nr.11,Art.114113

Naumann,A.;Sundqvist,J.;Ogiewa,M.;Boitier,L.;Czernohorsky,M.;Sienz,S.;Probst,G.;Jongbloed,B.;Beulens,S.;etal.

SiGe epitaxy on a 300 mm batch furnace

In:Journalofnanoscienceandnanotechnology11(2011),Nr.9,S.8040-8043

Boschke,T.S.;Müller,J.;Bräuhaus,D.;Schröder,U.;Böttger,U.

Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

IEEEElectronDevicesSociety:IEEEInternationalElectronDevicesMeeting,IEDM2011:Washington,DC,USA,5-7

Choi,K.-H.;Gutsch,M.;Freitag,M.;Hohle,C.

Efficient large volume data preparation for electron beam lithography for sub-45nm node

In:Maurer,W.;SocietyofPhoto-OpticalInstrumentationEngineers-SPIE-,Bellingham/Wash.:PhotomaskTechnology2011:19

September2011,Monterey,California;Bellingham,WA:SPIE,2011(ProceedingsofSPIE8166)

Freitag,M.;Choi,K.-H.;Gutsch,M.;Hohle,C.;Galler,R.;Krüger,M.;Weidenmüller,U.

Fast characterization of line end shortening and application of novel correction algorithms in e-beam direct write

In:Journalofmicro/nanolithography,MEMSandMOEMS10(2011),Nr.4,Art.043012

60 61

PUbLicatiONs

Kukli,K.;Kemeli,M.;Puukilainen,E.;Aarik,J.;Aidla,A.;Sjavaara,T.;Laitinen,M.;Tallarida,M.;Sundqvist,J.etal.

Atomic layer deposition of ruthenium films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and oxygen.

In:JournaloftheElectrochemicalSociety158(2011),Nr.3

Bott,S.;Rzehak,R.;Vasilev,B.;Kücher,P.;Bartha,J.W.:

A CMP model including global distribution of pressure.

In:IEEEtransactionsonsemiconductormanufacturing24(2011),Nr.2

Lanza,M.;Porti,M.;Nafria,M.;Aymerich,X.;Benstetter,G.;Lodermeier,E.;Ranzinger,H.;Jaschke,G.;Wilde,L.;etal.

ConductivityandchargetrappingafterelectricalstressinamorphousandpolycrystallineAl2O3-baseddevicesstudiedwith

AFM-relatedtechniques.

In:IEEETransactionsonNanotechnology10(2011),Nr.2,

Martin,L.;Manakli,S.;Bayle,S.;Choi,K.-H.;Gutsch,M.;Pradelles,J.;Bustos,J.:

Data preparation solution for e-beam multiple pass exposure: Reaching sub-22nm nodes with a tool dedicated to

45nm.

In:Herr,D.J.C.;SocietyofPhoto-OpticalInstrumentationEngineers-SPIE-,Bellingham/Wash.:

AlternativelithographictechnologiesIII:1-3March2011,SanJose,California,UnitedStates

Bellingham,WA:SPIE,2011,Paper797019(ProceedingsofSPIE7970)

Elschner,C.;Levin,A.A.;Wilde,L.;Grenzer,J.;Schroer,C.;Leo,K.;Riede,M.:

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction.

In:JournalofAppliedCrystallography44(2011),Nr.5

Hermann,P.;Hecker,M.;Renn,F;Rlke,M.;Kolanek,K.;Rinderknecht,J.;Eng,L.M.:

Effects of patterning induced stress relaxation in strained SOI/SiGe layers and substrate.

In:Journalofappliedphysics109(2011),Nr.12

Wojcik,H.;Kaltofen,R.;Merkel,U.;Krien,C.;Strehle,S.;Gluch,J.;Knaut,M.;Wenzel,C.;Preusse,A.;Bartha,J.W.;Geidel,M.

;Adolphi,B.;Neumann,V.;Liske,R.;Munnik,F.:

Electrical evaluation of Ru-W(-N), Ru-Ta(-N) and Ru-Mn films as Cu diffusion barriers.

In:Microelectronicengineering(2011),OnlineFirst

Thomas,O.;Schaller,M.;Gerlich,L.;Fischer,D.;Leppack,S.;Bartsch,C.;Schulz,S.E.:

Electrical property improvements of ultra low-k ILD using a silylation process feasible for process integration.

In:InstituteofElectricalandElectronicsEngineers-IEEE-:

IEEE14thInternationalInterconnectTechnologyConference,IITC2011:HeldatMay8-12,2011,togetherwiththeEuropean

WorkshoponMaterialsforAdvancedMetallization,MAM2011attheInternationalCongressCenterDresden

NewYork,NY:IEEE,2011,Art.5940329,3S.

Freitag,M.;Choi,K.-H.;Gutsch,M.;Hohle,C.;Galler,R.;Krueger,M.;Weidenmueller,U.:

Fast characterization of line end shortening and application of novel correction algorithms in e-beam direct write.

In:Herr,D.J.C.;SocietyofPhoto-OpticalInstrumentationEngineers-SPIE-,Bellingham/Wash.:

AlternativelithographictechnologiesIII:1-3March2011,SanJose,California,UnitedStates

Bellingham,WA:SPIE,2011,Paper79701C(ProceedingsofSPIE7970)

Müller,J.;Böscke,T.S.;Bräuhaus,D.;Schröder,U.;Böttger,U.;Sundqvist,J.;Kcher,P.;Mikolajick,T.;Frey,L.:

Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications.

In:AppliedPhysicsLetters99(2011),Nr.11,Art.112901

Böscke,T.S.;Müller,J.;Bräuhaus,D.;Schröder,U.;Böttger,U.:

Ferroelectricity in hafnium oxide thin films.

In:AppliedPhysicsLetters99(2011),Nr.10,Art.102903

Galler,R.;Choi,K.-H.;Gutsch,M.;Hohle,C.;Krueger,M.;Ramos,L.E.;Suelzle,M.;Weidenmueller,U.:

Geometrically induced dose correction: Method and performance results..

In:Behringer,U.F.W.;SocietyofPhoto-OpticalInstrumentationEngineers-SPIE-,Bellingham/Wash.;VDE/VDI-Gesellschaft

Mikroelektronik,Mikro-undFeinwerktechnik-GMM-:27thEuropeanMaskandLithographyConference2011:18-19January

2011,Dresden,GermanyBellingham,WA:SPIE,2011,Paper79850S(ProceedingsofSPIE7985)

Vasilev,B.;Rzehak,R.;Bott,S.;Kücher,P.;Bartha,J.W.:

Greenwood-Williamson model combining pattern-density and pattern-size effects in CMP.

In:IEEEtransactionsonsemiconductormanufacturing24(2011),Nr.2

Oszinda,T.;Schaller,M.;Dittmar,K.;Jiang,L.;Schulz,S.E.:

How to evaluate surface free energies of dense and ultra low-kappa dielectrics in pattern structures.

In:Travaly,Y.:InternationalWorkshopon"MaterialsforAdvancedMetallization",MAM2010:Mechelen(Malines),Belgium,

washeldfromMarch7thtoMarch10th,Amsterdam:Elsevier,2011(Microelectronicengineering88.2011,Nr.5)

Hermann,P.;Hecker,M.;Chumakov,D.;Weisheit,M.;Rinderknecht,J.;Shelaev,A.;Dorozhkin,P.;Eng,L.M.:

Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy.

In:Ultramicroscopy111(2011),Nr.11,S.1630-1635

Kelwing,T.;Naumann,A.;Trentzsch,M.;Graetsch,F.;Bayha,B.;Herrmann,L.;Trui,B.;Rudolph,D.;Lipp,D.;Krause,G.;

Carter,R.;Stephan,R.;Kücher,P.;Hansch,W.:

Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32 nm high-performance SOI

CMOS technologies.

In:Microelectronicengineering88(2011),2

62 63

PUbLicatiONs

Czernohorsky,M.;Melde,T.;Beyer,V.;Beug,M.F.;Paul,J.;Hoffmann,R.;Knöfler,R.;Tilke,A.T.:

Influence of metal gate and capping film stress on TANOS cell performance.

In:Microelectronicengineering88(2011),Nr.7,S.1178-1181

Mutas,S.;Klein,C.;Gerstl,S.S.A.:

Investigation of the analysis parameters and background subtraction for high-k materials with atom probe

tomography.

In:Suchorski,Y.:IFES2010,52ndInternationalFieldEmissionSymposium.Proceedings:HeldbetweenJuly5and8,2010,in

Sydney,AustraliaAmsterdam:Elsevier,2011

Wojcik,H.;Kaltofen,R.;Krien,C.;Merkel,U.;Wenzel,C.;Bartha,J.W.;Friedemann,M.;Adolphi,B.;Liske,R.;etal.

Investigations on Ru-Mn films as plateable Cu diffusion barriers.

In:InstituteofElectricalandElectronicsEngineers-IEEE-:IEEE14thInternationalInterconnectTechnologyConference,IITC2011

:HeldatMay8-12,2011,togetherwiththeEuropeanWorkshoponMaterialsforAdvancedMetallization,MAM2011atthe

InternationalCongressCenterDresden,NewYork,NY:IEEE,2011,Art.5940262

Liske,R.:

Die Kinetik der elektrochemischen Kupferabscheidung in Sub-100-nm-Strukturen.

Stuttgart:FraunhoferVerlag,2011,XIX

Martin,D;Grube,M;Weinreich,W.;Müller,J;Wilde,L.;Erben,E.;Weber,W.M.;Heitmann,J.;Schröder,U;etal.

Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal

structures

In:JournalofvacuumscienceandtechnologyB.Microelectronicsandnanometerstructures29(2011),No.1

Jegert,G.;Kersch,A.;Weinreich,W.;Lugli,P.:

Monte Carlo simulation of leakage currents in TiN/ZrO2/TiN capacitors.

In:IEEEtransactionsonelectrondevices58(2011),No.2

Vasilev,B.;Bott,S.;Rzehak,R.;Kücher,P.;Bartha,J.W.:

Pad roughness effects on the planarization and material removal rate in CMP processes

In:InstituteofElectricalandElectronicsEngineers-IEEE-:IEEE14thInternationalInterconnectTechnologyConference,IITC2011

HeldatMay8-12,2011,togetherwiththeEuropeanWorkshoponMaterialsforAdvancedMetallization,MAM2011atthe

InternationalCongressCenterDresden,NewYork,NY:IEEE,2011,Art.5940349

Mattern,N.;Vainio,U;Park,J.M.;Han,J.H.;Shariq,A.;Kim,D.H.;Eckert,J.:

Phase separation in Cu46Zr47-xAl7Gd x metallic glasses.

In:Journalofalloysandcompounds509(2011),No.SUPPL.1

Böscke,T.S;Teichert,S.;Bräuhaus,D.;Müller,J.;Schröder,U.;Böttger,U.;Mikolajick,T.:

Phase transitions in ferroelectric silicon doped hafnium oxide.

In:AppliedPhysicsLetters99(2011),No.11,Art.112904

Wedderhoff,K.;Kleint,C.A.;Shariq,A.;Teichert,S.:

A study of nanoscale TiB2 precipitation during titanium silicidation using atom probe tomography.

In:Thinsolidfilms519(2011),No.22

Shariq,A.;Mattern,N.:

A study of phase separated Ni66Nb17Y17 metallic glass using atom probe tomography.

In:Ultramicroscopy111(2011),No.8

Riedel,S.;Neidhardt,J.;Jansen,S.;Wilde,L.;Sundqvist,J.;Erben,E.;Teichert,S.;Michaelis,A.:

Synthesis of SrTiO3 by crystallization of SrO/TiO2 superlattices prepared by atomic layer deposition.

In:Journalofappliedphysics109(2011),No.9,Art.094101

Beug,M.F.;Melde,T.;Paul,J.;Knoefler,R.:

TaN and Al2O3 sidewall gate-etch damage influence on program, erase, and retention of sub-50-nm TANOS nand

flash memory cells.

In:IEEEtransactionsonelectrondevices58(2011),No.6

Jegert,G.;Kersch,A.;Weinreich,W.;Lugli,P.:

Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness.

In:Journalofappliedphysics109(2011),No.1

Gerlich,L.;Ohsiek,S.;Klein,C.;Geiß,M.;Friedemann,M.;Kücher,P.;Schmeißer,D.:

Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements.

In:InstituteofElectricalandElectronicsEngineers-IEEE-IEEE14thInternationalInterconnectTechnologyConference,IITC2011:

HeldatMay8-12,2011,togetherwiththeEuropeanWorkshoponMaterialsforAdvancedMetallization,MAM2011atthe

InternationalCongressCenterDresden,NewYork,NY:IEEE,2011,Art.5940322

Steidel,K.:

Untersuchung der Auflösungsgrenzen eines Variablen Formstrahlelektronenschreibers mit Hilfe chemisch verstärkter

und nicht verstärkter Negativlacke.

Stuttgart:FraunhoferVerlag,2011,III,

Jaschinsky,P.;Erben,E.,J.-W;Choi,K.-H.;Schulze,K;Gutsch,M;Freitag,M.;Schulz,S.E.;Steidel,K.;Hohle,C;Gessner,T.;

Kücher,P.:

Variable-shaped e-beam lithography enabling process development for future copper damascene technology.

In:Microelectronicengineering88(2011),No.8

64 65

FraunhoferCenterNanoelectronicTechnologiesCNT

KönigsbrückerStr.180

01099Dresden

Phone:+493512607-3001

Fax:+493512607-3005

contact@cnt.fraunhofer.de

Director

Prof.Dr.PeterKücher

+493512607-3000

peter.kuecher@cnt.fraunhofer.de

Head of Administration

AntjeSpitzer

+493512607-3006

antje.spitzer@cnt.fraunhofer.de

Forfurtherinformationenaboutour

competenciesandtechnologiesvisitusat:

www.cnt.fraunhofer.de

How to reach us

By plane:

Takethebusline77fromDresden-Airportandleaveatthe

stop"Infineon".Changetothetramline7towards"Penn-

rich".Getoffatthestop"InfineonSüd".Fromhereitisonly

a3-minute-walktobuilding48.

By car:

ExitfreewayA4atDresden-AirporttowardsDresden-

Airport.TurnrightatthecrosswayHerman-Reichelt-Straße/

Flughafen-Straße.FollowFlughafen-Straßewhichleadsinto

Karl-Marx-Straße.TurnrightatthecrosswayKarl-Marx-Straße/

KönigsbrückerLandstraße.Turnleftatthesecondstop-light

(accessInfineonSüd)andgotobuilding48.

By tram:

Takethetramline7or8fromthecentralstationtowards

“Hellerau”or“Weixdorf”.Getoffatthestop„InfineonSüd“.

Fromhereitisonlya3-minute-walktobuilding48.

cONtactcONtact

Published by

FraunhoferCenterNanoelectronicTechnologiesCNT

KönigsbrückerStr.180

01099Dresden

Phone:+493512607-3001

Fax:+493512607-3005

contact@cnt.fraunhofer.de

www.cnt.fraunhofer.de

coordination and layout

PeterFelten

Marketing & Public Relations

+493512607-3046

peter.felten@cnt.fraunhofer.de

Photo acknowledgements

MaximilianDrescher

VistecElectronBeamGmbH

GLOBALFOUNDRIESDresdenModuleOneLLC&Co.KG

@FraunhoferCenterNanoelectronicTechnologiesCNT,

Dresden2012

Allrightsreserved.

ReproductionsonlywithpermissionfromFraunhoferCNT.

eDitOriaL NOtes

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