H. Ryssel, P. Pichler (eds.)

Simulation of Semiconductor Devices

and Processes Voi. 6

Springer-Verlag Wien GmbH

Univ.-Prof. Dr. Heiner Ryssel Fraunhofer-Institut ftir Integrierte Schaltungen Erlangen, Federal Republic of Germany

Institut ftir Elektronische Bauelemente Universitiit Erlangen-Ntimberg, Federal Republic of Germany

Dr. Peter Pichler Fraunhofer-Institut fUr Integrierte Schaltungen, Erlangen, Federal Republic of Germany

This work is subject to copyright. AH rights are reserved, whether the whole or part of the material is concemed, specifically those of translation, reprinting. re-use of illustrations, broadcasting, reproduction by photocopying machines or similar means, and storage in data banks.

© 1995 Springer-Verlag Wien

Originally published by Springer-Verlag Wien New York in 1995 Softcover reprint of the hardcover 1 st edition 1995

Typesetting: Camera ready by editors and authors

Printed on acid-free and chlorine-free bleached paper

With 567 Figures

ISBN 978-3-7091-7363-3 ISBN 978-3-7091-6619-2 (eBook) DOI 10.1007/978-3-7091-6619-2

SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 6

EDITORIAL

v

This volume contains the Proceedings of the 6th International Conference on "Simu­lation of Semiconductor Devices and Processes" (SISDEP'95) which was held at theCampus of the University of Erlangen-Nuremberg in Erlangen on September 6-8, 1995.Over 200 participants from more than 20 different countries attended. SISDEP'9.5continued a series of conferences which started in 1984 at the University College ofWales, Swansea, where it took place a second time in 1986. Subsequent conferenceswere organized at the University of Bologna in 1988, the Federal Institute of Techno­logy in Zurich in 1991 and the Technical University of Vienna in 1993. SISDEP'95 isthe last conference in this series because it was agreed with the International Commit­tees of the International Workshop on "Numerical Modeling of Processes and Devicesfor Integrated Circuits" (NUPAD) and the International Workshop on "VLSI Processand Device Modeling" (VPAD), the other two major series of conferences on numeri­cal simulation of semiconductor devices held in the USA and Japan, to combine thethree conferences to the International Conference on "Simulation of SemiconductorProcesses and Devices" (SISPAD). So, SISDEP'95 is the 6th and last SISDEP con­ference and at the same time the first SISPAD conference. The new series will beorganized annually and will take place in turn in Europe, Japan, and the USA.

SISDEP'95 provided an international forum for the presentation of state-of-the-artresearch and development results in the area of numerical process and device simu­lation. Continously shrinking device dimensions, the use of new materials, and ad­vanced processing steps in the manufacturing of semiconductor devices requires newand improved software. The trend towards increasing complexity in structures andprocess technology demands advanced models describing all basic effects and sophis­ticated two and three dimensional tools for almost arbitrarily designed geometries.SISDEP jSISPAD is the major international forum for presenting the latest resultsand bringing together the simulation and modeling community, and the process aswell as device engineers who need numerical simulation tools with high reliability forcharacterization, prediction, and development.

The conference committee of SISDEP'95 has prepard an excellent program with 6invited papers, 75 papers for oral presentation and 39 posters, selected from a total of191 abstracts. Their distribution reflects the international nature of the conference:29 from the USA, 26 from Germany, 14 from Japan, 8 from each Austria and Switzer­land, 5 from Italy, 4 from each Canada and France, 3 from the United Kingdom, 2from Lithuania, Russia, Spain, Sweden, and The Netherlands, and 1 from Australia,Belgium, China, Czech Republic, Greece, Hungary, Korea, Poland, and Yugoslavia.

The proceedings were printed from the authors' camera-ready manuscripts. We wouldlike to express our sincere appreciation to the authors for their high quality contribu­tions, their cooperation and efforts. In addition, we would like to thank the membersof the conference committee for carrying out the paper selection work with care andcompetence.

SISPAD'96 will be held on September 2-4, 1996 in Tokyo. Judging from the contentsof this volume, the editors can foresee the presentation of a great deal of new andexciting research next year in Japan and we invision continuing strong interest insimulation of semiconductor processes and devices.

Heiner RysselPeter Pichler

Editors

SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 6Edited by H. Ryssel, P. Pichler - September 1995

SUPPORTING ORGANIZATIONS

Bayerische Verwaltung der Staatlichen Schlosser, Garten und SeenBayerisches Staatsministerium fur Wirtschaft, Verkehr und TechnologieVDE/VDI-Gesellschaft Mikroelektronik (GME)IEEE Electron Devices SocietyIEEE German SectionInformationstechnische Gesellschaft (ITG)Siemens AGUniversitat Erlangen-Nurnberg

CONFERENCE COMMITTEE

G. BaccaraniK. de MeyerW. FichtnerM. FukumaH. JacobsS. JonesS. LauxC. LombardiM. OrlowskiA. PoncetH. RysselW. SchildersS. SelberherrT. ToyabeH. Van der Vorst

Universita di BolognaIMECETH ZurichNECSiemensGMMTIBMSGS-ThompsonMotoriaCNET/CNSUniversitat Erlangen-Nurn bergPhilipsTechnische Universitat WienToyo UniversityRijksuniversiteit Utrecht

ITALYBELGIUMSWITZERLANDJAPANGERMANYUNITED KINGDOMUSAITALYUSAFRANCEGERMANYTHE NETHERLANDSAUSTRIAJAPANTHE NETHERLANDS

LOCAL ORGANIZING COMMITTEE

M. EbnerT. Klauser

S. ListF. Meyer

P. PichlerH. Ryssel

M. SchaferC. Scordo

The cover picture was reproduced with the kind permission of V. Axelrad, TechnologyModeling Associates, Palo Alto, USA from Fig. 3 of his contribution on page 13 int lJ('se proceedings.

SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 6

Edited by H. Ryssel, P. Pichler - September 1995

Table of Contents

VII

Numerical Modelling and Materials Characterisation for Integrated MicroElectro Mechanical Systems .

H. Baltes, J. G. Korvink, and O. Paul

Fast and Accurate Aerial Imaging Simulation for Layout PrintabilityOptimization 10

V. Axelrad

Efficient and Rigorous 3D Model for Optical Lithography Simulation 14K. D. Lucas, H. Tanabe, C.-M. Yuan, and A. J. Strojwas

Application of the Two-dimensional Numerical Simulation for the Descriptionof Semiconductor Gas Sensors 18D. Schipanski, Z. Gergintschew, and J. Kositza

Analysis of Piezoresistive Effects in Silicon Structures Using MultidimensionalProcess and Device Simulation 22M. Lades, J. Frank, J. Funk, and G. Wachutka

Modeling of Magnetic-Field-Sensitive GaAs Devices Using 3D Monte CarloSimulation 26C. Brisset, F.-X. Musalem, P. Dollfus. and P. Hesto

Quasi Three-Dimensional Simulation of Heat Transport in Thermal-BasedMicrosensors 30

A. Nathan and N. R. Swart

Simulating Deep Sub-Micron Technologies: An Industrial Perspective. . . . . . . . :34P. Packan

An Improved Calibration Methodology for Modeling Advanced IsolationTechnologies 42P. Smeys, P. B. Griffin, and K. C. Saraswat

Algorithms for the Reduction of Surface Evolution Discretization Error 46H. A. Rueda and M. E. Law

Polygonal Geometry Reconstruction after Cellular Etching or DepositionSimulation .50R. Mlekus, Ch. Ledl, E. Strasser, and S. Selberherr

A Data-Model for a Technology and Simulation Archive. . . 51K. Wimmer, M. Noell, W. J. Taylor, and M. Orlowski

A Programmable Tool for Interactive Wafer-State Level Data Processing 58G. Rieger, S. Halama, and S. Selberherr

Layout Design Rule Generation with TCAD Tools for ManufacturingJ. Lopez-Serrano and A. J. Strojwas

62

ALAMODE: A Layered Model Development Environment '" .. . . .. 66D. W. Yergeau, E. C. Kan, M. J. Gander, and R. W. Dutton

TCAD Optimization Based on Task-Level Framework ServicesCh. Pichler, N. Khalil, G. Schrom, and S. Selberherr

70

VIll Table of Contents

Cellular Automata Simulation of GaAs-IMPATT-Diodes . . 74D. Liebig

Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs withDifferent Types of Surface States 78

K. Horio, K. Satoh, and T. Yamada

An Efficient Numerical Method to Solve the Time-Dependent SemiconductorEquations Including Trapped Charge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82

L. Colalongo, M. Valdinoci, and M. Rudan

Advances in Numerical Methods for Convective Hydrodynamic Model ofSemiconductor Devices 86

N. R. Aluru, K. H. Law, and R. W. Dutton

An Advanced Cellular Automaton Method with Interpolated Flux Scheme andits Application to Modeling of Gate Currents in Si MOSFETs 90

K. Fukuda and I<. Nishi

Piezoresistance and the Drift-Diffusion Model in Strained Silicon 94A. Nathan and T. Manku

A Novel Approach to HF-Noise Characterization of Heterojunction BipolarTransistors 98

F. Herzel and B. Heinemann

Ge Profile for Minimum Neutral Base Transit Time in Si/Si1_yGeyHeterojunction Bipolar Transistors. . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .. . . . . . . . . . . 102

W. Moizer

Performance Optimization in Si/SiGe Heterostructure FETs 106A. Abramo, J. Bude, F. Venturi, M. R. Pinto, and E. Sangiorgi

On the Integral Representations of Electrical Characteristics in Si Devices ... 110S. Biesemans and K. De Meyer

Large Signal Frequency Domain Device Analysis Via the Harmonic BalanceTechnique 114

B. Troyanovsky, Z. Yu, and R. W. Dutton

A Method for Extracting the Threshold Voltage of MOSFETs Based on CurrentComponents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118K. Aoyama

2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann andPoisson Equations Using a Generalized Spherical Harmonic Expansion 122

W-C. Liang, Y-J. Wu, H. Hennacy, S. Singh, N. Goldsman, and 1. Mayergoyz

Ultra High Performance, Low Power 0.2 /-lm CMOS Microprocessor Technologyand TCAD Requirements " . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . 126

A. Nasr, J. Faricelli, N. Khalil, and C.-L. Huang

Viscoelastic Modeling of Titanium Silicidation 135S. Cea and M. Law

Multidimensional Nonlinear Viscoelastic Oxidation ModelingS. Cea and M. Law

139

Table of Contents IX

Three-Dimensional Integrated Process Simulator: 3D-MIPS linM. Fujinaga, T. Kunikiyo. T. Uchida, K. Kamon, N. Kotani, and T. Hirao

Effect of Process-Induced Mechanical Stress on Circuit Layout. . .. . . . . ... . . . . 147H. Miura and Y. Tanizaki

The Simulation System for Three-Dimensional Capacitance and Current DensityCalculation with a User Friendly GUI . . . 1.51

M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu,R. Bauer, G. Rieger, and S. Selberherr

Numerical and Analytical Modelling of Head Resistances of Diffused Resistors 1·5·5U. Witkowski and D. Schroeder

New Spreading Resistance Effect for Sub-0.50{Hn MOSFETs: Model andSimulation l.59M. Orlowski and W. J. Taylor

The Role of SEMATECH in Enabling Global TCAD Collaboration 163E. M. Buturla, J. Byers, A. Husain, M. Kump, P. Lloyd, R. Manukonda,S. Runnels, and D. Scharfetter

Three Dimensional Simulation for Sputter Deposition Equipment and Processes 166D. S. Bang, Z. Krivokapic, M. Hohmeyer, J. P. McVittie, and K. C. Saraswat

Comprehensive Reactor, Plasma, and Profile Simulator for Plasma EtchProcesses 170

J. Zheng, J. P. McVittie, M. J. Kushner, and Z. Krivokapic

Modeling the Wafer Temperature in a LPCVD Furnace.. .. . .. .. 174A. Kersch and M. Schiifer

Determination of Electronic States in Low Dimensional Heterostructure andQuantum Wire Devices 178

A. Abou-Elnour and K. Schiinemann

An Exponentially Fitted Finite Element Scheme for Diffusion ProcessSimulation on Coarse Grids 182

S. Mijalkovic

Achievement of Quantitatively Accurate Simulation of Ion-Irradiated BipolarPower Devices 186

P. Hazdra and J. Vobeckj

Modeling of Substrate Bias Effect in Bulk and SOl SiGe-channel p-MOSFETs 190G. F. Niu, G. Ruan, and T. A. Tang

A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating AnAccumulated Diffusion Lenght and its Application to the Design of PowerMOSFETs 194

S. Kamohara, M. Sugaya, and H. Matsuo

Recovery of Vectorial Fields and Currents in Multidimensional Simulation ... 198D. G. Kerr and I. D. Mayergoyz

An Efficient Approach to Solving The Boltzmann Transport Equation in Ultra-fast Transient Situations 202

M.-G. Cheng

x Table of Contents

226

Modeling of a Hot Electron Injection Laser 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 •• 0 • 0 0 0 • 206V. 1. Tolstikhin and M. Willander

Scaling Considerations of Bipolar Transistors Using 3D Device Simulation o. 0 210M. Schroter and D. J. Walkey

Three-Dimensional Monte Carlo Simulation of Boron Implantation into <100>Single-Crystal Silicon Considering Mask Structure o. 0 0 0 0 0 0 0 0 0 • 0 0 0 0 0 0 • 0 0 0 0 0 0 0 • 214

M.-s. Son, H.-s. Park, and H.-j. Hwang

A fully 2D, Analytical Model for the Geometry and Voltage Dependence ofThreshold Voltage in Submicron MOSFETs o' 0.00. 0 0.0000000000000000000. 0 0 0 218

A. Klos and A. Kostka

On the Influence of Band Structure and Scattering Rates on Hot ElectronModeling o. 0 0 0 0 0 0 0 0 0 0 0 0 •• 0 0 • 0 •• 0 0 0 •• 0 0 0 0 0 • 0 • 0 0 0 0 •• 0 • 0 0 • 0 • 0 0 • 0 0 • 0 • 0 0 • 0 0 0 • 0 • 0 • 222

Chr. Jungemann, S. Keith, B. Meinerzhagen, and W. L. Engl

Finite Element Monte Carlo Simulation of Recess Gate FETsS. Babiker, A. Asenov, J. R. Barker, and S. P. Beaumont

Coupled 2D-MicroscopicjMacroscopic Simulation of NanoelectronicHeterojunction Devices 00 •• 0 0 0 0 0 0 0 0 0 00000.0000.00.0000.000000000000000000.00 230

Co Pigorsch, R. Stenzel, and W. Klix

On the Discretization of van Roosbroeck's Equations with Magnetic Field 0000 234H. Gajewski and K. Gartner

Modeling of Impact Ionization in a Quasi Deterministic 3D Particle DynamicsSemiconductor Device Simulation Program o. 0 0 0 •• 0 •• 0 0 0 0 • 0 o' • 0 0 0 0 0 • 0 0 0 0 • 0 0 0 0 238

K. Tarnay, F. Masszi, T. Kocsis, and A. Poppe

Accurate Modeling of TijTiN Thin Film Sputter Deposition Processes 0 0 0 0 0 0 0 242H. Stippel and Ko Reddy

Monte Carlo Simulation of InP jInGaAs HBT with a Buried Subcollector 0 •• 0 246G. Khrenov and E. Kulkova

Design and Optimization of Millimeter-Wave IMPATT Oscillators Using aConsistent Model for Active and Passive Circuit Parts 00' 0 0 00000000. 0 0 •• 0 0 0 • 0 250M. Curow

Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors .00 254D. Reznik

Efficient 3D Unstructured Grid Algorithms for Modelling of Chemical VapourDeposition in Horizontal Reactors 0 0 0 0 0 • 0 •• 0 • 0 • 0 •• 0 0 0 0 0 0 0 00 0 0 0 0 0 0 • 0 0 0 • 0 0 0 0 0 • 0 258F. Durst, A. 00 Galjukov, Yu. N. Makarov, Mo Schafer, P. A. Voinovich, andA. I. Zhmakin

Preventing Critical Conditions in IGBT Chopper Circuits by a Multi-Step GateDrive Mode 0 0 0 0 0 • 0 0 0 0 0 0 0 0 00 0 • 0 0 0 0 0 0 0 0 • 0 • 0 0 0 •• 0 • 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 • 0 • 0 0 0 • 262

W. Gerlach and U. Wiese

Control of Plasma Dynamics within Double-Gate-Turn-Off Thyristors(D-GTO) 00000000000000.00.000000 •• 0 0 0 0 •• 000. 0 0.0000. 0 0 o. 0 0 •• 0 0 0 00000000.0 266

U. Wiesner and R. Sittig

Table of Contents Xl

A Vector Level Control Function for Generalized Octree Mesh Generation 270

T. Chen, J. Johnson, and R. W. Dutton

Comparison of Hydrodynamic Formulations for Non-Parabolic SemiconductorDevice Simulations 274

A. W. Smith and K. F. Brennan

Influence of Analytical MOSFET Model Quality on Analog Circuit Simulation 278

M. Miura-Mattausch, A. Rahm, and O. Prigge

2-D Adaptive Simulation of Dopant Implantation and Diffusion

C.-G. Lin and.M. E. Law

282

Optimization of a Recessed LOCOS Using a Tuned 2-D Process Simulator 286

G. P. Carnevale, P. Colpani, A. Marmiroli, A. Rebora, and A. Tixier

Simulation of Complex Planar Edge Termination Structures for Vertical IGBTsby Solving the Complete Semiconductor Device Equations 290

M. Netzel and R. Herzer

Numerical Analysis of Hot-Electron Effects in GaAs MESFETs 294

Y. A. Tkachenko, C. J. Wei, J. G. M. Hwang, and D. M. Hwang

Capacitance Model of Microwave hlP-Based Double Heterojunction BipolarTransistors 298

G. J. Wei, H.-C. Chung, Y. A. Tkachenko, and J. C. M. Hwang

Estimation of the Charge Collection for the Soft-Error Immunity by the 3D-Device Simulation and the Quantitative Investigation .... . . . . . . . . . . . . . . . . . . . . 302

Y. Ohno, T. Kishimoto, K. Sonoda, H. Sayama, S. Komori, A. Kinomura,Y. Horino, K. Fujii, T. Nishimura, N. Kotani, M. Takai, and H. Miyoshi

D. C. Electrothermal Hybrid BJT Model for SPICE

J. Zarebski and K. Gorecki

Alpha-Particle Induced Soft Error Rate Evaluation Tool and User Interface :310

P.Oldiges

Hydrodynamic Modeling of Electronic Noise by the Transfer Impedance Method :314

P. Shiktorov, V. Gruzinskis, E. Starikov, L. Reggiani, and L. Varani

Monte Carlo Simulation of S-Type Negative Differential Conductance inSemiconductor Heterostructures :318

E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, and L. Varani

Two-Barrier Model for Description of Charge Ca.rriers Transport Processes inStructures with Porous Silicon :322

S. P. Zimin, V. S. Kuznetsov, and A. V. Prokaznikov

Monte-Carlo Simulation of Inverted Hot Carrier Distribution Under StrongCarrier-Optical Phonon Sca.ttering :32!)

I. Nefedov and A. Andronov

XII Table of Contents

Algorithms and Models for Simulation of MOCVD of III-V Layers in thePlanetary Reactor 328

T. Bergunde, M. Dauelsberg, Yu. Egorov, L. Kadinski, Yu. N. Makarov,M. Schiifer, G. Strauch, and M. Weyers

An Approach for Explaining Drift Phenomena in GTO Devices Using NumericalDevice Simulation..... .. .. 332

S. Eicher, F. Bauer, and W. Fichtner

Parallel 3D Finite Element Power Semiconductor Device Simulator Based onTopologically Rectangular Grid 336

A. R. Brown, A. Asenov, S. Roy, and J. R. Barker

Investigation of Silicon Carbide Diode Structures via Numerical SimulationsIncluding Anisotropic Effects 340

E. Velmre, A. Udal, F. Masszi, and E. Nordlander

A New Physical Compact Model of CLBTs for Circuit Simulation IncludingTwo-Dimensional Calculations......... .. .. .. .. .. .. 344

D. Freund and A. Kostka

Combining 2D and 3D Device Simulation with Circuit Simulation for OptimisingHigh Efficiency Silicon Solar Cells , 348

G. Heiser, P. P. Altermatt, and J. Litsios

A New Quasi-two Dimensional HEMT Model

C. G. Morton, C. M. Snowden, and M. J. Howes

Simulations of the Forward Behaviour of Hybrid Schottky- lpn-Diodes

U. Witkowski and D. Schroeder

352

:3,56

J-IFET Breakdown Study by 2D and Quasi 2D Simulations: Topology Influence :360

Y Butel, J. Hedoire, J. C. De Jaeger, M. Lefebvre, and G. Salmer

Investigation of GTO Turn-on in an Inverter Circuit at Low Temperatures Using2-D Electrothermal Simulation............. :364

Y. C. Gerstenmaier, and E. Baudelot

Large Scale Thermal Mixed Mode Device and Circuit Simulation

J. Litsios, B. Schmithiisen, and W. Fichtner

368

372Scaling of Conventional MOSFET's to the O.lJ.lm Regime

M. J. van Dort, J. W. Slotboom, and P. H. Woerlee

Monte Carlo Simulation of Carrier Capture at Deep Centers for Silicon andGallium Arsenide Devices ,.......... .. .. 380

A. Palma, J. A. Jimenez-Tejada, A. Godoy, and J. E. Carceller

A New Statistical Enhancement Technique in Parallelized Monte Carlo DeviceSimulation ,............ 384

K. Shigeta, K. Tanaka, T. Iizuka, H. Kato, and H. Matsumoto

Stability Issues in Self-Consistent Monte Carlo-Poisson Simulations

A. Ghel,ti, X. Wang, F. Venturi, and F. A. Leon

388

Table of Contents

The Path Integral Monte Carlo Method for Quantum Transport on a ParallelComputer .

C. Schulz-Mirbach

A Monte Carlo Transport Model Based on Sperical Harmonics Expansion of theValence Bands .

XIII

392

396

H. Kosina, M. Harrer, P. Vogl, and S. Selberherr

Full-Band Monte Carlo Transport Calculation III an Integrated SimulationPlatform 400

U. Krumbein, P. D. Yoder, A. Benvenuti, A. Schenk, and W. Fichtner

On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation 404

S. E. Laux

T 2CAD: Total Design for Sub-f.lm Process and Device Optimization withTechnology-CAD 408

H. Masuda

Modelling Impact-Ionization in the Framework of the Spherical-HarmonicsExpansion of the Boltzmann Transport Equation with Full-Band StructureEffects 416

M. C. Vecchi and M. Rudan

Impact Ionization Model Using Second- and Fourth-Order Moments ofDistribution Functions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420

K. Sonoda, M. Yamaji, K. Taniguchi, and C. Hamaguchi

An Accurate NMOS Mobility Model for 0.25f.lm MOSFETs 424

444

S. A. Mujtaba, M. R. Pinto, D. M. Boulin, C. S. Rafferty, and R. W. Dutton

A 2-D Modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS)Structures for the Determination of Interface State and Grain Boundary StateDistributions 428

A.-C. Salalin, H. Lhermite, B. Fortin, and O. Bonnaud

Sensitivity Analysis of an Industrial CMOS Process Using RSM Techniques 432

M. J. van Dart and D. B. M. Klaassen

Process- and Devicesimulation of Very High Speed Vertical MOS Transistors 436

F. Lau, W. H. Krautschneider, F. Hofmann, H. Gassner, and H. Schafer

Two-Dimensional Transient Simulation of Charge-Coupled Devices UsingMINIMOS NT ,140

M. Rottinger, T. Simlinger, and S. Selberherr

Determination of Vacancy Diffusivity in Silicon for Process Simulation

T. Shimizu, Y. Zaitsu, S. Matsumoto, E. Arai, M. Yoshida, and T. Abe

Precipitation Phenomena and Transient Diffusion/Activation During HighConcentration Boron Annealing .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 448

A. Hofler, T. Feudel, A. Liegmann, N. Strecker, W. Fichtner, Y. Kataoka,K. Suzuki, and N. Sasaki

XIV Table of Contents

Modelling of Silicon Interstitial Surface Recombination Velocity at Non-Oxidizing Interfaces 452

C. Tsamis and D. Tsoukalas

Efficient Hybrid Solution of Sparse Linear Systems

A. Liegmann, K. Gartner, and W. Fichtner

456

Mesh Generation for 3D Process Simulation and the Moving Boundary Problem 460

S. Bozek, B. Baccus, V. Senez, and Z. Z. Wang

Three-Dimensional Grid Adaption Using a Mixed-Element DecompositionMethod.................................................................... 464

E. Leitner and S. Selberherr

Unified Grid Generation and Adaptation for Device Simulation

G. Garreton, L. Villablanca, N. Strecker, and W. Fichtner

468

480

488

Platinum Diffusion at Low Temperatures 472

M. Jacob, P. Pichler, H. Ryssel, and R. Falster

Lattice Monte-Carlo Simulations of Vacancy-Mediated Diffusion andImplications for Continuum Models of Coupled Diffusion 476

S. T. Dunham and C. D. Wu

A New Hydrodynamic Equation for Ion-Implantation Simulation

S. Kamohara and M. Kawakami

Monte Carlo Simulation of Multiple-Species Ion Implantation and itsApplication to the Modeling of 0.1J.l PMOS Devices 484

A. Simionescu, G. Hobler, and F. Lau

Analytical Model for Phosphorus Large Angle Tilted Implantation

A. Burenkov, W. Bohmayr, J. Lorenz, H. Ryssel, and S. Selberherr

Statistical Accuracy and CPU Time Characteristic of Three Trajectory SplitMethods for Monte Carlo Simulation of Ion Implantation 492

W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, and S. Selberherr

Author Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 496