Spectral Modelling Poster - TÜV Rheinland · This poster contains results of high-precision indoor...
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® TÜV, TUEV and TUV are registered trademarks. Utilization and application requires prior approval. ∫ ⋅ ⋅ = ≈ b a i SC Photo d SR E A I I λ λ λ ) ( ) ( 80% 90% 100% 110% 120% 1,55 1,57 1,59 1,61 1,63 1,65 1,67 1,69 1,71 1,73 1,75 ∆Isc [%] APE [eV] µ-Si This poster contains results of high-precision indoor and outdoor measurements of different PV module technologies performed at the headquarters of TÜV Rheinland, Cologne. Modules based on CdTe, CI(G)S, a-Si, a-Si/μ-Si, a-Si/a-Si and c-Si (mono and poly) semiconductors were analyzed nondestructively according to their spectral response and technology specific differences are pointed out. After the indoor characterization the modules were exposed outdoor for one year, steadily measuring the maximum power point P MPP and the I/V-curves with the corresponding solar spectrum. With this data volume it is possible to describe the spectral conditions at the test-site in Cologne using the APE-Method. In a next step the influence on the module performance and the energy yield of the different technologies are analyzed. The photo current is calculated theoretically by the integral of spectral response data and spectral measurements and compared to temperature and irradiance corrected real outdoor measurements. Depending on the position of the sun related to the module and the atmosphere the spectral distribution of solar irradiation can be shifted into blue or red wavelength areas. Some technologies can benefit while others may be disadvantaged depending on their spectral response. In what way and why these spectral shifts happen in the course of a day and the season and what influence they have on the energy yield of a certain technology are described in the following. Markus Schweiger, Ulrike Jahn, Werner Herrmann TÜV Rheinland Energie und Umwelt GmbH, Am Grauen Stein, 51105 Cologne, Germany Tel.: +49 221 806-5585, E-Mail: [email protected] RESULTS CONCLUSIONS SPECTRAL ANALYSIS OF VARIOUS THIN FILM MODULES USING HIGH PRECISION SPECTRAL RESPONSE DATA AND SOLAR SPECTRAL IRRADIANCE DATA Figure 1 Non-destructive measurement of the spectral response (SR) of a triple-junction module with the test equipment at TÜV Rheinland, Cologne Spectral response of different PV module technologies Characterizing solar spectrum with the average photon energy (APE) Influence of spectrum on performance and yield Since 2013 TÜV Rheinland runs extensive energy yield measurements at five different locations all over the world. Requests can be sent to the authors. Significant differences in SR-Signal of CIGS and a-Si specimens APE-Method appropriate method to describe solar spectrum Automatable procedure to correct T, G and MM implemented Sinus-shaped performance fluctuation of a-Si because of spectrum Spectrum not significant for energy yield of c-Si and most CIGS Annual gains of +3% (some a-Si) and +1% (CdTe) calculated in 11/12 INTRODUCTION 0,00 0,20 0,40 0,60 0,80 1,00 1,20 300 500 700 900 1100 1300 Rel. Spectral Response. Wavelength [nm] Norm AM1.5 a-Si CIS CdTe CIGS poly c-Si mono c-Si CIGS 0,00 0,20 0,40 0,60 0,80 1,00 1,20 300 500 700 900 1100 1300 Rel. Spectral Response Wavelength [nm] CI(G)S 0,00 0,20 0,40 0,60 0,80 1,00 1,20 300 400 500 600 700 800 900 1000 Rel. Spectral Response Wavelength [nm] Top-Layer Bottom-Layer The SR-equipment is suitable for all common module designs (Fig. 1) Step-size 1nm for single-, double- and triple-junction specimens possible Large spread of the spectral response for different module technologies (Fig. 2) Also large technology internal spreads for a-Si and CIGS (Fig. 3 + 4) The spectral mismatch (MM) and the theoretical photo current can be calculated to improve P Max determination and outdoor monitoring 80% 90% 100% 110% 120% ∆Isc [%] CdTe 80% 90% 100% 110% 120% ∆Isc [%] CI(G)S & c-Si 80% 90% 100% 110% 120% ∆Isc [%] a-Si 80% 90% 100% 110% 120% ∆Isc [%] CdTe 80% 90% 100% 110% 120% ∆Isc [%] CI(G)S & c-Si 80% 90% 100% 110% 120% 1,55 1,57 1,59 1,61 1,63 1,65 1,67 1,69 1,71 1,73 1,75 ∆Isc [%] APE [eV] a-Si/µ-Si 80% 90% 100% 110% 120% ∆Isc [%] a-Si Spectrum < 1.65 eV red Spectrum > 1.65 eV blue Spectrum = 1.65 eV STC Winter red spectrum (Fig. 5 + 8) Calculated Measured 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2 2,1 6:00 7:00 8:00 9:00 10:00 11:00 12:00 13:00 14:00 15:00 16:00 17:00 18:00 19:00 20:00 21:00 APE [eV] time AM1,5g Summer (21.08.2010) Fall (10.10.2010) Winter (29.01.2011) Spring (19.04.2011) 2 2,2 2,4 2,6 2,8 3 3,2 3,4 3,6 3,8 4 4,2 4,4 4,6 4,8 5 5,2 5,4 Isc [A] Isc: T,G corrected Isc: T,G,MM corrected ) ( ) ( ) ( λ λ λ λ P q I q hc SR QE Φ ⋅ = ⋅ = Figure 5 Solar spectral irradiance drift for cloudless days in summer (blue), spring (green), fall (yellow) and winter (red) for modules mounted facing south and 35° tilted in Cologne Figure 9 Correcting spectral effects of an a-Si specimen Figure 8 Seasonal variations of APE-values and average APE-value per month Figure 6 Dependency of ISC on spectral changes, calculated with formula, normalized to ISC,STC at 1.65 eV Figure 7 Dependency of ISC on spectral changes, measured (T, G corrected), normalized to ISC,STC at 1.65 eV ∫ ∫ Φ ⋅ = b a i e b a i d q d E APE λ λ λ λ ) ( ) ( Figure 2 Rel. spectral response signal of different PV- module technologies in comparison with IEC 60904-3 spectrum Figure 3 + 4 Rel. spectral response signal of different CIGS and a-Si modules, illustrating significant differences within the same thin-film technology Results of calculated and measured I SC (APE) almost similar (Fig. 6+7) Dependency of a-Si/μ-Si on spectrum screened out as combination of a-Si behavior for APE < 1.65eV and μ-Si behavior for APE > 1.65eV significant losses because of current mismatch expected Almost no dependency of c-Si and most CIGS on spectrum Strong dependency of a-Si and small dependency of CdTe on spectrum The seasonal average spectrum was calculated to 1.68 eV in 2011/12. Small energy yield gains of max. +3% (some a-Si) and +1% (CdTe).
Transcript of Spectral Modelling Poster - TÜV Rheinland · This poster contains results of high-precision indoor...
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This poster contains results of high-precision indoor and outdoor measurements of different PV module technologies performed at the headquarters of TÜVRheinland, Cologne. Modules based on CdTe, CI(G)S, a-Si, a-Si/µ-Si, a-Si/a-Si and c-Si (mono and poly) semiconductors were analyzed nondestructivelyaccording to their spectral response and technology specific differences are pointed out. After the indoor characterization the modules were exposed outdoorfor one year, steadily measuring the maximum power point PMPP and the I/V-curves with the corresponding solar spectrum. With this data volume it ispossible to describe the spectral conditions at the test-site in Cologne using the APE-Method. In a next step the influence on the module performance and theenergy yield of the different technologies are analyzed. The photo current is calculated theoretically by the integral of spectral response data and spectralmeasurements and compared to temperature and irradiance corrected real outdoor measurements.
Depending on the position of the sun related to the module and theatmosphere the spectral distribution of solar irradiation can be shifted intoblue or red wavelength areas. Some technologies can benefit while othersmay be disadvantaged depending on their spectral response. In what wayand why these spectral shifts happen in the course of a day and theseason and what influence they have on the energy yield of a certaintechnology are described in the following.
Markus Schweiger, Ulrike Jahn, Werner Herrmann TÜV Rheinland Energie und Umwelt GmbH, Am Grauen Stein, 51105 Cologne, Germany
Tel.: +49 221 806-5585, E-Mail: [email protected]
RESULTS
CONCLUSIONS
SPECTRAL ANALYSIS OF VARIOUS THIN FILM MODULES USING HIGH PRECISION SPECTRAL RESPONSE DATA AND
SOLAR SPECTRAL IRRADIANCE DATA
Figure 1 Non-destructive measurement of the spectral response (SR) of a triple-junction module with the test equipment atTÜV Rheinland, Cologne
Spectral response of different PV module technologies
Characterizing solar spectrum with the average photon energy (APE)
Influence of spectrum on performance and yield
Since 2013 TÜV Rheinland runs extensive energy yieldmeasurements at five different locations all over the world.Requests can be sent to the authors.
� Significant differences in SR-Signal of CIGS and a-Si specimens
� APE-Method appropriate method to describe solar spectrum
� Automatable procedure to correct T, G and MM implemented
� Sinus-shaped performance fluctuation of a-Si because of spectrum
� Spectrum not significant for energy yield of c-Si and most CIGS
� Annual gains of +3% (some a-Si) and +1% (CdTe) calculated in 11/12
INTRODUCTION
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Norm AM1.5 a-Si CIS CdTe CIGS poly c-Si mono c-Si CIGS
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Top-Layer Bottom-Layer
� The SR-equipment is suitablefor all common moduledesigns (Fig. 1)
� Step-size 1nm for single-,double- and triple-junctionspecimens possible
� Large spread of the spectralresponse for different moduletechnologies (Fig. 2)
� Also large technology internalspreads for a-Si and CIGS(Fig. 3 + 4)
� The spectral mismatch (MM)and the theoretical photocurrent can be calculated toimprove PMax determinationand outdoor monitoring
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a-Si
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1,55 1,57 1,59 1,61 1,63 1,65 1,67 1,69 1,71 1,73 1,75
∆Is
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a-Si/µ-Si
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� Spectrum < 1.65 eV � red
� Spectrum > 1.65 eV � blue
� Spectrum = 1.65 eV � STC
� Winter red spectrum (Fig. 5 + 8)
Calculated Measured
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AM1,5g Summer (21.08.2010) Fall (10.10.2010) Winter (29.01.2011) Spring (19.04.2011)
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Figure 5 Solar spectral irradiance drift for cloudless days insummer (blue), spring (green), fall (yellow) and winter (red)for modules mounted facing south and 35° tilted in Cologne
Figure 9 Correcting spectral effects of an a-Si specimenFigure 8 Seasonal variations of APE-values and averageAPE-value per month
Figure 6 Dependency of ISC on spectral changes,calculated with formula, normalized to ISC,STC at 1.65 eV
Figure 7 Dependency of ISC on spectral changes, measured(T, G corrected), normalized to ISC,STC at 1.65 eV
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Figure 2 Rel. spectral response signal of different PV-module technologies in comparison with IEC 60904-3spectrum
Figure 3 + 4 Rel. spectral response signal of different CIGSand a-Si modules, illustrating significant differences withinthe same thin-film technology
� Results of calculated and measured ISC (APE) almost similar (Fig. 6+7)
� Dependency of a-Si/µ-Si on spectrum screened out as combination ofa-Si behavior for APE < 1.65eV and µ-Si behavior for APE > 1.65eV�significant losses because of current mismatch expected
� Almost no dependency of c-Si and most CIGS on spectrum
� Strong dependency of a-Si and small dependency of CdTe on spectrum
� The seasonal average spectrum was calculated to 1.68 eV in 2011/12.� Small energy yield gains of max. +3% (some a-Si) and +1% (CdTe).
